| Physical Mechanisms behind the Field‐Cycling Behavior of HfO2‐Based Ferroelectric Capacitors M Pešić, FPG Fengler, L Larcher, A Padovani, T Schenk, ED Grimley, ... Advanced Functional Materials 26 (25), 4601-4612, 2016 | 794 | 2016 |
| Giant piezoelectricity of Sm-doped Pb (Mg1/3Nb2/3) O3-PbTiO3 single crystals F Li, MJ Cabral, B Xu, Z Cheng, EC Dickey, JM LeBeau, J Wang, J Luo, ... Science 364 (6437), 264-268, 2019 | 744 | 2019 |
| On the structural origins of ferroelectricity in HfO2 thin films X Sang, ED Grimley, T Schenk, U Schroeder, JM LeBeau Applied Physics Letters 106 (16), 2015 | 630 | 2015 |
| Quantitative atomic resolution scanning transmission electron microscopy JM LeBeau, SD Findlay, LJ Allen, S Stemmer Physical Review Letters 100 (20), 206101, 2008 | 459 | 2008 |
| Structural Changes Underlying Field‐Cycling Phenomena in Ferroelectric HfO2 Thin Films ED Grimley, T Schenk, X Sang, M Pešić, U Schroeder, T Mikolajick, ... Advanced Electronic Materials 2 (9), 1600173, 2016 | 393 | 2016 |
| A comprehensive study on the structural evolution of HfO 2 thin films doped with various dopants MH Park, T Schenk, CM Fancher, ED Grimley, C Zhou, C Richter, ... Journal of Materials Chemistry C 5 (19), 4677-4690, 2017 | 315 | 2017 |
| Experimental quantification of annular dark-field images in scanning transmission electron microscopy JM LeBeau, S Stemmer Ultramicroscopy 108 (12), 1653-1658, 2008 | 282 | 2008 |
| Position averaged convergent beam electron diffraction: Theory and applications JM LeBeau, SD Findlay, LJ Allen, S Stemmer Ultramicroscopy 110 (2), 118-125, 2010 | 265 | 2010 |
| Standardless atom counting in scanning transmission electron microscopy JM LeBeau, SD Findlay, LJ Allen, S Stemmer Nano letters 10 (11), 4405-4408, 2010 | 264 | 2010 |
| Low-dimensional Mott material: Transport in ultrathin epitaxial LaNiO3 films J Son, P Moetakef, JM LeBeau, D Ouellette, L Balents, SJ Allen, ... Applied Physics Letters 96 (6), 2010 | 260 | 2010 |
| Revolving scanning transmission electron microscopy: Correcting sample drift distortion without prior knowledge X Sang, JM LeBeau Ultramicroscopy 138, 28-35, 2014 | 235 | 2014 |
| Spin-driven ordering of Cr in the equiatomic high entropy alloy NiFeCrCo C Niu, AJ Zaddach, AA Oni, X Sang, JW Hurt, JM LeBeau, CC Koch, ... Applied Physics Letters 106 (16), 2015 | 226 | 2015 |
| Transition from battery to pseudocapacitor behavior via structural water in tungsten oxide JB Mitchell, WC Lo, A Genc, J LeBeau, V Augustyn Chemistry of Materials 29 (9), 3928-3937, 2017 | 217 | 2017 |
| Si doped hafnium oxide—a “fragile” ferroelectric system C Richter, T Schenk, MH Park, FA Tscharntke, ED Grimley, JM LeBeau, ... Advanced Electronic Materials 3 (10), 1700131, 2017 | 179 | 2017 |
| Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO2 ED Grimley, T Schenk, T Mikolajick, U Schroeder, JM LeBeau Advanced Materials Interfaces 5 (5), 1701258, 2018 | 157 | 2018 |
| Atomic-resolution electron microscopy of nanoscale local structure in lead-based relaxor ferroelectrics A Kumar, JN Baker, PC Bowes, MJ Cabral, S Zhang, EC Dickey, DL Irving, ... Nature materials 20 (1), 62-67, 2021 | 146 | 2021 |
| Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes PD Lomenzo, P Zhao, Q Takmeel, S Moghaddam, T Nishida, M Nelson, ... Journal of Vacuum Science & Technology B 32 (3), 2014 | 145 | 2014 |
| High-angle scattering of fast electrons from crystals containing heavy elements: Simulation and experiment JM LeBeau, SD Findlay, X Wang, AJ Jacobson, LJ Allen, S Stemmer Physical Review B—Condensed Matter and Materials Physics 79 (21), 214110, 2009 | 119 | 2009 |
| Thermoelectric generators for wearable body heat harvesting: Material and device concurrent optimization A Nozariasbmarz, F Suarez, JH Dycus, MJ Cabral, JM LeBeau, MC Öztürk, ... Nano Energy 67, 104265, 2020 | 99 | 2020 |
| Nanotwinning-assisted dynamic recrystallization at high strains and strain rates AA Tiamiyu, EL Pang, X Chen, JM LeBeau, KA Nelson, CA Schuh Nature materials 21 (7), 786-794, 2022 | 84 | 2022 |
Everett D GrimleySAS InstituteAdresse e-mail validée de sas.com
