| Reservoir computing using dynamic memristors for temporal information processing C Du, F Cai, MA Zidan, W Ma, SH Lee, WD Lu Nature communications 8 (1), 2204, 2017 | 845 | 2017 |
| A fully integrated reprogrammable memristor–CMOS system for efficient multiply–accumulate operations F Cai*, JM Correll*, SH Lee*(contributed equally), Y Lim, V Bothra, ... Nature Electronics 2, 290–299, 2019 | 648 | 2019 |
| Temporal data classification and forecasting using a memristor-based reservoir computing system J Moon, W Ma, JH Shin, F Cai, C Du, SH Lee, WD Lu Nature Electronics 2, 480-487, 2019 | 459 | 2019 |
| Nanoscale resistive switching devices for memory and computing applications SH Lee, X Zhu, WD Lu Nano Research 13 (5), 1228–1243, 2020 | 126 | 2020 |
| Integration of 4F2 selector-less crossbar array 2Mb ReRAM based on transition metal oxides for high density memory applications HD Lee, SG Kim, K Cho, H Hwang, H Choi, J Lee, SH Lee, HJ Lee, J Suh, ... 2012 Symposium on VLSI Technology (VLSIT), 151-152, 2012 | 77 | 2012 |
| A deep neural network accelerator based on tiled RRAM architecture Q Wang, X Wang, SH Lee, FH Meng, WD Lu 2019 IEEE international electron devices meeting (IEDM), 14.4. 1-14.4. 4, 2019 | 66 | 2019 |
| Quantitative, Dynamic TaOx Memristor/Resistive Random Access Memory Model SH Lee, J Moon, YJ Jeong, J Lee, X Li, H Wu, WD Lu ACS Applied Electronic Materials 2 (3), 701-709, 2020 | 52 | 2020 |
| Nanoionic Resistive‐Switching Devices X Zhu, SH Lee, WD Lu Advanced Electronic Materials 5 (9), 1900184, 2019 | 50 | 2019 |
| Vertical atomic manipulation with dynamic atomic-force microscopy without tip change via a multi-step mechanism J Bamidele, SH Lee, Y Kinoshita, R Turanský, Y Naitoh, YJ Li, ... Nature communications 5 (1), 4476, 2014 | 37 | 2014 |
| Memristors Based on (Zr, Hf, Nb, Ta, Mo, W) High‐Entropy Oxides M Ahn, Y Park, SH Lee, S Chae, J Lee, JT Heron, E Kioupakis, WD Lu, ... Advanced Electronic Materials 7 (5), 2001258, 2021 | 32 | 2021 |
| A Fully-Integrated Reprogrammable CMOS-RRAM Compute-In-Memory Coprocessor for Neuromorphic Applications JM Correll, V Bothra, F Cai, Y Lim, SH Lee, S Lee, WD Lu, Z Zhang, ... IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 6 …, 2020 | 30 | 2020 |
| Chemical tip fingerprinting in scanning probe microscopy of an oxidized Cu (110) surface J Bamidele, Y Kinoshita, R Turanský, SH Lee, Y Naitoh, YJ Li, ... Physical Review B—Condensed Matter and Materials Physics 86 (15), 155422, 2012 | 28 | 2012 |
| Highly reliable and fast nonvolatile hybrid switching ReRAM memory using thin Al2O3demonstrated at 54nm memory array J Yi, H Choi, S Lee, J Lee, D Son, S Lee, S Hwang, S Song, J Park, S Kim, ... 2011 Symposium on VLSI Technology-Digest of Technical Papers, 48-49, 2011 | 18 | 2011 |
| The effect of tunnel barrier at resistive switching device for low power memory applications H Choi, J Yi, S Hwang, S Lee, S Song, S Lee, J Lee, D Son, J Park, ... 2011 3rd IEEE International Memory Workshop, IMW 2011, 5873243, 2011 | 17 | 2011 |
| Vertical double gate Z-RAM technology with remarkable low voltage operation for DRAM application JS Kim, SW Chung, TS Jang, SH Lee, DH Son, SJ Chung, SM Hwang, ... 2010 Symposium on VLSI Technology, 163-164, 2010 | 16 | 2010 |
| Variable resistance memory device and method for fabricating the same YI Jae-Yun, SP Song, SH Lee US Patent 8,933,427, 2015 | 15 | 2015 |
| Electronic device including a semiconductor memory unit that includes cell mats of a plurality of planes vertically stacked SH Lee, HJ Lee US Patent US9613901B2, 2017 | 11 | 2017 |
| Image formation and contrast inversion in noncontact atomic force microscopy imaging of oxidized Cu (110) surfaces J Bamidele, Y Kinoshita, R Turanský, SH Lee, Y Naitoh, YJ Li, ... Physical Review B 90 (3), 035410, 2014 | 10 | 2014 |
| Offset buried metal gate vertical floating body memory technology with excellent retention time for DRAM application SM Hwang, S Banna, C Tang, S Bhardwaj, M Gupta, T Thurgate, D Kim, ... 2011 Symposium on VLSI Technology-Digest of Technical Papers, 172-173, 2011 | 7 | 2011 |
| Intrinsically Stretchable Floating Gate Memory Transistors for Data Storage of Electronic Skin Devices TU Nam, NTP Vo, MW Jeong, KH Jung, SH Lee, TI Lee, JY Oh ACS nano, 2024 | 6 | 2024 |
Wei D. LuJames R. Mellor Professor, EECS, Univ of Michigan, IEEE Fellow. co-founder MemryX Inc, Crossbar Inc.Adresse e-mail validée de umich.edu