| 2-D Materials for Ultrascaled Field-Effect Transistors: One Hundred Candidates under the Ab Initio Microscope C Klinkert, Á Szabó, C Stieger, D Campi, N Marzari, M Luisier ACS nano 14 (7), 8605-8615, 2020 | 81 | 2020 |
| First-principles simulations of 2-D semiconductor devices: Mobility, IV characteristics, and contact resistance M Luisier, A Szabo, C Stieger, C Klinkert, S Brück, A Jain, L Novotny 2016 IEEE International Electron Devices Meeting (IEDM), 5.4. 1-5.4. 4, 2016 | 43 | 2016 |
| Ab Initio Simulation of Band-to-Band Tunneling FETs With Single- and Few-Layer 2-D Materials as Channels A Szabo, C Klinkert, D Campi, C Stieger, N Marzari, M Luisier IEEE Transactions on Electron Devices 65 (10), 4180-4187, 2018 | 33 | 2018 |
| Light-matter interactions in van der Waals photodiodes from first principles J Cao, S Fiore, C Klinkert, N Vetsch, M Luisier Physical Review B 106 (3), 035306, 2022 | 9 | 2022 |
| Impact of orientation misalignments on black phosphorus ultrascaled field-effect transistors C Klinkert, S Fiore, J Backman, Y Lee, M Luisier IEEE Electron Device Letters 42 (3), 434-437, 2021 | 8 | 2021 |
| Influence of the hBN Dielectric Layers on the Quantum Transport Properties of MoS2 Transistors S Fiore, C Klinkert, F Ducry, J Backman, M Luisier Materials 15 (3), 1062, 2022 | 6 | 2022 |
| Field-Effect Transistors Based on 2D Materials: A Modeling Perspective M Luisier, C Klinkert, S Fiore, J Backman, Y Lee, C Stieger, Á Szabó Beyond-CMOS: State of the Art and Trends, 33, 2023 | 2 | 2023 |
| Bulk photovoltaic effect in partial overlap MoSe2-WSe2 van der Waals heterostructures: An ab initio quantum transport study J Cao, S Fiore, C Klinkert, M Luisier Solid-State Electronics 197, 108452, 2022 | 1 | 2022 |
| The ab initio microscope: on the performance of 2D materials as future field-effect transistors C Klinkert ETH Zurich, 2021 | 1 | 2021 |
| Transistors à effet de champ M LUISIER, C KLINKERT, S FIORE, J BACKMAN, Y LEE, C STIEGER, ... Au-delà du CMOS, 37, 2024 | | 2024 |
| Ab initio modelling of photodetectors based on van der Waals heterostructures J Cao, S Fiore, C Klinkert, M Luisier ETH Zurich, Integrated Systems Laboratory, 2022 | | 2022 |
| 2-D Materials Modelling: from Transistors to Majorana Fermions M Luisier, C Klinkert, Y Lee, D Campi, N Marzari APS March Meeting Abstracts 2022, B32. 005, 2022 | | 2022 |
| Ab initio modeling of thermal effects in 2D van der Waals materials M Luisier, S Fiore, T Bunjaku, J Backman, C Klinkert, A Szabo The European Conference on Lasers and Electro-Optics, jsi_1_1, 2021 | | 2021 |
| (Invited) Challenges and Opportunities in the Modeling of Novels Devices and Materials for Logic Applications M Luisier, A Szabo, C Klinkert, C Stieger, M Rau, T Agarwal, Y Lee Electrochemical Society Meeting Abstracts 235, 1182-1182, 2019 | | 2019 |
| Novel 2-D Materials for Tunneling FETs: an Ab-initio Study C Klinkert, A Szabo, D Campi, C Stieger, N Marzari, M Luisier 2018 76th Device Research Conference (DRC), 1-2, 2018 | | 2018 |
| Asymptotic Freedom C Klinkert Spin 1, 2, 2012 | | 2012 |
Mathieu LuisierETH ZurichAdresse e-mail validée de iis.ee.ethz.ch