Articles avec mandats d'accès public - Xiaoguang HeEn savoir plus
Non disponibles : 18
GaN high electron mobility transistors with AlInN back barriers
XG He, DG Zhao, DS Jiang, JJ Zhu, P Chen, ZS Liu, LC Le, J Yang, XJ Li, ...
Journal of Alloys and Compounds 662, 16-19, 2016
Exigences : Chinese Academy of Sciences, National Natural Science Foundation of China
Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness
J Yang, DG Zhao, DS Jiang, P Chen, JJ Zhu, ZS Liu, LC Le, XJ Li, XG He, ...
Journal of Applied Physics 117 (5), 2015
Exigences : National Natural Science Foundation of China
Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition
XG He, DG Zhao, DS Jiang, ZS Liu, P Chen, LC Le, J Yang, XJ Li, ...
Thin Solid Films 564, 135-139, 2014
Exigences : National Natural Science Foundation of China
Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells
X Li, DG Zhao, J Yang, DS Jiang, ZS Liu, P Chen, JJ Zhu, W Liu, XG He, ...
Superlattices and Microstructures 97, 186-192, 2016
Exigences : Chinese Academy of Sciences, National Natural Science Foundation of China
Unintentionally doped semi-insulating GaN with a low dislocation density grown by metalorganic chemical vapor deposition
X He, D Zhao, D Jiang, J Zhu, P Chen, Z Liu, L Le, J Yang, X Li, S Zhang, ...
Journal of Vacuum Science & Technology B 32 (5), 2014
Exigences : National Natural Science Foundation of China
The significant effect of the thickness of Ni film on the performance of the Ni/Au Ohmic contact to p-GaN
XJ Li, DG Zhao, DS Jiang, ZS Liu, P Chen, JJ Zhu, LC Le, J Yang, XG He, ...
Journal of Applied Physics 116 (16), 2014
Exigences : National Natural Science Foundation of China
Utilization of polarization-inverted AlInGaN or relatively thinner AlGaN electron blocking layer in InGaN-based blue–violet laser diodes
L Le, D Zhao, D Jiang, P Chen, Z Liu, J Zhu, J Yang, X Li, X He, J Liu, ...
Journal of Vacuum Science & Technology B 33 (1), 2015
Exigences : National Natural Science Foundation of China
Performance comparison of front-and back-illuminated modes of the AlGaN-based pin solar-blind ultraviolet photodetectors
X Li, D Zhao, D Jiang, Z Liu, P Chen, L Le, J Yang, X He, S Zhang, J Zhu, ...
Journal of Vacuum Science & Technology B 32 (3), 2014
Exigences : National Natural Science Foundation of China
Investigation on the performance and efficiency droop behaviors of InGaN/GaN multiple quantum well green LEDs with various GaN cap layer thicknesses
J Yang, DG Zhao, DS Jiang, P Chen, JJ Zhu, ZS Liu, LC Le, XG He, XJ Li, ...
Vacuum 129, 99-104, 2016
Exigences : Chinese Academy of Sciences, National Natural Science Foundation of China
Influence of residual carbon impurities in i-GaN layer on the performance of GaN-based pin photodetectors
X Li, D Zhao, D Jiang, P Chen, J Zhu, Z Liu, L Le, J Yang, X He, L Zhang, ...
Journal of Vacuum Science & Technology B 34 (1), 2016
Exigences : Chinese Academy of Sciences, National Natural Science Foundation of China
XPS study of impurities in Si‐doped AlN film
F Liang, P Chen, DG Zhao, DS Jiang, ZJ Zhao, ZS Liu, JJ Zhu, J Yang, ...
Surface and Interface Analysis 48 (12), 1305-1309, 2016
Exigences : Chinese Academy of Sciences, National Natural Science Foundation of China
Effect of GaN buffer polarization on electron distribution of AlGaN/GaN heterostructure
X He, D Zhao, W Liu, J Yang, X Li, X Li
Journal of Alloys and Compounds 670, 258-261, 2016
Exigences : Chinese Academy of Sciences, National Natural Science Foundation of China
Photovoltaic response of InGaN/GaN multi-quantum well solar cells enhanced by reducing p-type GaN resistivity
J Yang, DG Zhao, DS Jiang, P Chen, JJ Zhu, ZS Liu, LC Le, XG He, XJ Li, ...
IEEE Journal of Photovoltaics 6 (2), 454-459, 2015
Exigences : Chinese Academy of Sciences, National Natural Science Foundation of China
Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD
F Liang, P Chen, DG Zhao, DS Jiang, ZJ Zhao, ZS Liu, JJ Zhu, J Yang, ...
Applied Physics A 122, 1-7, 2016
Exigences : Chinese Academy of Sciences, National Natural Science Foundation of China
Understanding droop effect by analysis on carrier density dependence in InGaN/GaN multiple-quantum-well light-emitting diodes
W Liu, D Zhao, D Jiang, P Chen, Z Liu, J Zhu, J Yang, X He, X Li, X Li, ...
Superlattices and Microstructures 96, 220-225, 2016
Exigences : Chinese Academy of Sciences, National Natural Science Foundation of China
Large field emission current from Si-doped AlN film grown by MOCVD on n-type (001) 6H-SiC
F Liang, P Chen, DG Zhao, DS Jiang, ZS Liu, JJ Zhu, J Yang, W Liu, ...
Chemical Physics Letters 651, 76-79, 2016
Exigences : Chinese Academy of Sciences, National Natural Science Foundation of China
Investigation of breakdown mechanism during field emission process of AlN thin film microscopic cold cathode
F Liang, P Chen, D Zhao, D Jiang, Z Liu, J Zhu, J Yang, L Le, W Liu, X He, ...
Journal of Vacuum Science & Technology B 34 (1), 2016
Exigences : Chinese Academy of Sciences, National Natural Science Foundation of China
Growth condition optimization and mobility enhancement through prolonging the GaN nuclei coalescence process of AlGaN/AlN/GaN structure
XG He, DG Zhao, DS Jiang, JJ Zhu, P Chen, ZS Liu, LC Le, J Yang, XJ Li, ...
Chinese Physics B 24 (9), 096802, 2015
Exigences : Chinese Academy of Sciences, National Natural Science Foundation of China
Disponibles quelque part : 18
Formation of two-dimensional electron gas at AlGaN/GaN heterostructure and the derivation of its sheet density expression
XG He, DG Zhao, DS Jiang
Chinese physics B 24 (6), 067301, 2015
Exigences : National Natural Science Foundation of China
Suppression of electron leakage by inserting a thin undoped InGaN layer prior to electron blocking layer in InGaN-based blue-violet laser diodes
LC Le, DG Zhao, DS Jiang, P Chen, ZS Liu, J Yang, XG He, XJ Li, JP Liu, ...
Optics Express 22 (10), 11392-11398, 2014
Exigences : National Natural Science Foundation of China
Les informations concernant la publication et le financement sont déterminées automatiquement par un programme informatique