Michael Dudley

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Jianqiu GuoApplied MaterialsAdresse e-mail validée de amat.com
Fangzhen WuStony Brook UniversityAdresse e-mail validée de alumni.stonybrook.edu
Huanhuan WangStony Brook UniversityAdresse e-mail validée de stonybrook.edu
Zlatko SitarKobe Steel Distinguished Professor of Materials Science and Engineerign, North Carolina StateAdresse e-mail validée de ncsu.edu
Marek SkowronskiCarnegie Mellon UniversityAdresse e-mail validée de cmu.edu
Raoul SchlesserHexaTech, Inc.Adresse e-mail validée de hexatechinc.com
Robert F. DavisCarnegie Mellon UniversityAdresse e-mail validée de andrew.cmu.edu
Ian BakerDartmouth CollegeAdresse e-mail validée de dartmouth.edu
Perena GoumaProfessor of Materials Science and EngineeringAdresse e-mail validée de osu.edu
Vishwanath (Vish) PrasadProfessor of Mechanical Engineering, University of North TexasAdresse e-mail validée de unt.edu
Ramon CollazoProfessor of Materials Science and Engineering, NCSUAdresse e-mail validée de ncsu.edu
Dong Su（苏东）Institute of Physics, CAS; Past: Brookhaven National Laboratory；Stony Brook Univ.; ASU; EPFLAdresse e-mail validée de iphy.ac.cn
stephen edward saddowDepartment of Electrical Engineering, University of South FloridaAdresse e-mail validée de usf.edu
Michael SpencerCornell University OR Howard Universtiy OR Morgan State UniversityAdresse e-mail validée de morgan.edu
Phani Kumar KonkapakaCornell UniversityAdresse e-mail validée de cornell.edu
Yanbin WangResearch Professor, University of ChicagoAdresse e-mail validée de cars.uchicago.edu
Huang WeiPh.D. candiadate of Climate Change, Lanzhou UniversityAdresse e-mail validée de lzu.edu.cn
Wei HuangXishuangbanna tropical botanical gardenAdresse e-mail validée de mail.ustc.edu.cn

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Michael Dudley

Stony Brook Univ., Univ. of Warwick, Strathclyde Univ., Université Pierre et Marie Curie (Paris 6)

Adresse e-mail validée de stonybrook.edu


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
Crystal Growt G Dhanaraj, K Byrappa, VV Prasad, M Dudley technology 1 (1), 2, 2010	555	2010
Fabrication and characterization of polycrystalline WO3 nanofibers and their application for ammonia sensing G Wang, Y Ji, X Huang, X Yang, PI Gouma, M Dudley The Journal of Physical Chemistry B 110 (47), 23777-23782, 2006	314	2006
Study of bulk and elementary screw dislocation assisted reverse breakdown in low-voltage (< 250 V) 4H-SiC p(+)n junction diodes - Part I: DC properties PG Neudeck, W Huang, M Dudley IEEE TRANSACTIONS ON ELECTRON DEVICES 46 (3), 478-484, 1999	242*	1999
The mechanism of micropipe nucleation at inclusions in silicon carbide M Dudley, XR Huang, W Huang, A Powell, S Wang, P Neudeck, ... Applied physics letters 75 (6), 784-786, 1999	171	1999
Seeded growth of AlN bulk crystals in m-and c-orientation P Lu, R Collazo, RF Dalmau, G Durkaya, N Dietz, B Raghothamachar, ... Journal of Crystal Growth 312 (1), 58-63, 2009	169	2009
Breakdown degradation associated with elementary screw dislocations in 4H-SiC p+ n junction rectifiers PG Neudeck, W Huang, M Dudley MRS Online Proceedings Library (OPL) 483, 285, 1997	160	1997
Direct evidence of micropipe-related pure superscrew dislocations in SiC XR Huang, M Dudley, WM Vetter, W Huang, S Wang, CH Carter Jr Applied physics letters 74 (3), 353-355, 1999	158	1999
White-beam synchrotron topographic studies of defects in 6H-SiC single crystals M Dudley, S Wang, W Huang, CH Carter Jr, VF Tsvetkov, C Fazi Journal of Physics D: Applied Physics 28 (4A), A63, 1995	153	1995
Recombination-enhanced defect motion in forward-biased 4H–SiC diodes M Skowronski, JQ Liu, WM Vetter, M Dudley, C Hallin, H Lendenmann Journal of applied physics 92 (8), 4699-4704, 2002	137	2002
Reduction of threading dislocation densities in AlN∕ sapphire epilayers driven by growth mode modification J Bai, M Dudley, WH Sun, HM Wang, MA Khan Applied physics letters 88 (5), 2006	134	2006
Study of the defect elimination mechanisms in aspect ratio trapping Ge growth J Bai, JS Park, Z Cheng, M Curtin, B Adekore, M Carroll, A Lochtefeld, ... Applied Physics Letters 90 (10), 2007	132	2007
VO2 films with strong semiconductor to metal phase transition prepared by the precursor oxidation process M Gurvitch, S Luryi, A Polyakov, A Shabalov, M Dudley, G Wang, S Ge, ... Journal of Applied Physics 102 (3), 2007	125	2007
Report on the growth of bulk aluminum nitride and subsequent substrate preparation JC Rojo, GA Slack, K Morgan, B Raghothamachar, M Dudley, ... Journal of crystal growth 231 (3), 317-321, 2001	124	2001
Superscrew dislocation contrast on synchrotron white-beam topographs: an accurate description of the direct dislocation image XR Huang, M Dudley, WM Vetter, W Huang, W Si, CH Carter Jr Journal of applied crystallography 32 (3), 516-524, 1999	112	1999
Current status and emerging trends in wide bandgap (WBG) semiconductor power switching devices K Shenai, M Dudley, RF Davis ECS Journal of Solid State Science and Technology 2 (8), N3055, 2013	106	2013
Nucleation of threading dislocations in sublimation grown silicon carbide EK Sanchez, JQ Liu, M De Graef, M Skowronski, WM Vetter, M Dudley Journal of applied physics 91 (3), 1143-1148, 2002	98	2002
X-ray characterization of bulk AIN single crystals grown by the sublimation technique B Raghothamachar, M Dudley, JC Rojo, K Morgan, LJ Schowalter Journal of Crystal Growth 250 (1-2), 244-250, 2003	92	2003
Bulk growth of large area SiC crystals AR Powell, JJ Sumakeris, Y Khlebnikov, MJ Paisley, RT Leonard, ... Materials Science Forum 858, 5-10, 2016	85	2016
Stacking faults created by the combined deflection of threading dislocations of Burgers vector c and c+ a during the physical vapor transport growth of 4H–SiC M Dudley, F Wu, H Wang, S Byrappa, B Raghothamachar, G Choi, S Sun, ... Applied Physics Letters 98 (23), 2011	84	2011
Growth kinetics and thermal stress in the sublimation growth of silicon carbide R Ma, H Zhang, V Prasad, M Dudley Crystal growth & design 2 (3), 213-220, 2002	82	2002

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