Prof.Dr.Krishnan Baskar

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Dr.Raju RameshAalto University, FinlandAdresse e-mail validée de aalto.fi
Loganathan RaviUniversity of Warwick, United KingdomAdresse e-mail validée de warwick.ac.uk
Tetsuo SogaNagoya Institute of TechnologyAdresse e-mail validée de nitech.ac.jp
J KumarCrystal Growth Centre, Anna UniversityAdresse e-mail validée de annauniv.edu
Subramaniam ArulkumaranTemasek Laboratories@NTU, Nanyang Technological UniversityAdresse e-mail validée de ntu.edu.sg
Arnaud CLAUDELInstitut Néel - CNRSAdresse e-mail validée de neel.cnrs.fr
Sreenidhi TGlobalFoundries, BengaluruAdresse e-mail validée de globalfoundries.com
Mahdi AlizadehAalto University, FinlandAdresse e-mail validée de aalto.fi
Ramasamy JayavelAnna UniversityAdresse e-mail validée de annauniv.edu
Eric FaulquesCNRSAdresse e-mail validée de univ-lille.fr
Jayaramakrishnan VelusamyUniversity of CambridgeAdresse e-mail validée de cam.ac.uk
Suddhasatwa Basu, FNASc,FNAE, FR...FIPI Chair Prof (HAG), Dept of Chem Eng. IIT Delhi; Director (former), CSIR-IMMT, BhubaneswarAdresse e-mail validée de iitd.ac.in
Dr. Pankaj Kumar TiwariIIT DelhiAdresse e-mail validée de iitd.ac.in
Fouad BennisProfessor Ecole Centrale de NantesAdresse e-mail validée de ls2n.fr
Sayantani SenUniversity of CalcuttaAdresse e-mail validée de caluniv.ac.in
Anirban BhattacharyyaUniversity of CalcuttaAdresse e-mail validée de caluniv.ac.in
Dr S SundaramAssistant Professor, Bannari Amman Institute of TechnologyAdresse e-mail validée de bitsathy.ac.in
Ramadoss Roop KumarBITS - Pilani, Dubai CampusAdresse e-mail validée de dubai.bits-pilani.ac.in
Suresh SundaramAssociate Professor, Georgia Tech EuropeAdresse e-mail validée de georgiatech-metz.fr
Dr. G. Devanand VenkatasubbuAssociate Professor, Department of Nanotechnology, SRM Institute of Science and TechnologyAdresse e-mail validée de srmist.edu.in

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Prof.Dr.Krishnan Baskar

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compound semiconductors particularly nitride based materials for high electron mobility transistors UV (260-360nm) and visible


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
MOCVD growth of high efficiency current-matched AlGaAsSi tandem solar cell T Soga, K Baskar, T Kato, T Jimbo, M Umeno Journal of crystal growth 174 (1-4), 579-584, 1997	83	1997
Optical and field-emission properties of ZnO nanostructures deposited using high-pressure pulsed laser deposition T Premkumar, YS Zhou, YF Lu, K Baskar ACS applied materials & interfaces 2 (10), 2863-2869, 2010	81	2010
Studies on electron beam evaporated ZrO₂/AlGaN/GaN metal–oxide–semiconductor high‐electron‐mobility transistors K Balachander, S Arulkumaran, H Ishikawa, K Baskar, T Egawa physica status solidi (a) 202 (2), R16-R18, 2005	73	2005
Synthesis, structural, morphological and electrical properties of NBT–BT ceramics for piezoelectric applications SR Kanuru, K Baskar, R Dhanasekaran Ceramics International 42 (5), 6054-6064, 2016	66	2016
Effects of AlN nucleation layers on the growth of AlN films using high temperature hydride vapor phase epitaxy M Balaji, A Claudel, V Fellmann, I Gelard, E Blanquet, R Boichot, A Pierret, ... Journal of Alloys and Compounds 526, 103-109, 2012	48	2012
Heteroepitaxial technologies on Si for high-efficiency solar cells M Umeno, T Soga, K Baskar, T Jimbo Solar energy materials and solar cells 50 (1-4), 203-212, 1998	43	1998
Growth and comparison of single crystals and polycrystalline brownmillerite Ca2Fe2O5 S Dhankhar, G Bhalerao, S Ganesamoorthy, K Baskar, S Singh Journal of Crystal Growth 468, 311-315, 2017	40	2017
2 MeV ion irradiation effects on AlGaN/GaN HFET devices G Sonia, E Richter, F Brunner, A Denker, R Lossy, M Mai, F Lenk, ... Solid-state electronics 52 (7), 1011-1017, 2008	39	2008
Anomalous room temperature magnetoresistance in brownmillerite Ca 2 Fe 2 O 5 S Dhankhar, K Gupta, G Bhalerao, N Shukla, M Chandran, B Francis, ... RSC Advances 5 (112), 92549-92553, 2015	33	2015
Influence of the V/III ratio in the gas phase on thin epitaxial AlN layers grown on (0001) sapphire by high temperature hydride vapor phase epitaxy A Claudel, V Fellmann, I Gélard, N Coudurier, D Sauvage, M Balaji, ... Thin Solid Films 573, 140-147, 2014	32	2014
Growth and characterization of tris thiourea magnesium zinc sulphate single crystals N Bhuvaneswari, K Baskar, R Dhanasekaran Optik 126 (23), 3731-3736, 2015	31	2015
Hydrothermal synthesis of chalcopyrite CuInS2, CuInSe2 and CuInTe2 nanocubes and their characterization S Sugan, K Baskar, R Dhanasekaran Current Applied Physics 14 (11), 1416-1420, 2014	31	2014
Thermal strain in indium phosphide on silicon obtained by epitaxial lateral overgrowth YT Sun, K Baskar, S Lourdudoss Journal of Applied physics 94 (4), 2746-2748, 2003	31	2003
Fabrication of Schottky barrier diodes on clump of gallium nitride nanowires grown by chemical vapour deposition S Sanjay, K Baskar Applied Surface Science 456, 526-531, 2018	27	2018
Structural and optical characterization of AlGaN/GaN layers M Jayasakthi, R Ramesh, P Arivazhagan, R Loganathan, K Prabakaran, ... Journal of crystal growth 401, 527-531, 2014	27	2014
Synthesis and characterization of nanocrystalline gallium nitride by nitridation of Ga-EDTA complex V Ganesh, S Suresh, M Balaji, K Baskar Journal of Alloys and Compounds 498 (1), 52-56, 2010	27	2010
Demonstration of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with silicon-oxy-nitride as the gate insulator K Balachander, S Arulkumaran, T Egawa, Y Sano, K Baskar Materials Science and Engineering: B 119 (1), 36-40, 2005	27	2005
Particulate assisted growth of ZnO nanorods and microrods by pulsed laser deposition T Premkumar, P Manoravi, BK Panigrahi, K Baskar Applied surface science 255 (15), 6819-6822, 2009	26	2009
Fabrication of AlGaN/GaN double‐insulator metal–oxide–semiconductor high‐electron‐mobility transistors using SiO₂ and SiN as gate insulators K Balachander, S Arulkumaran, Y Sano, T Egawa, K Baskar physica status solidi (a) 202 (4), R32-R34, 2005	26	2005
Epitaxy of gallium nitride pyramids on few layer graphene for metal-semiconductor-metal based photodetectors S Sanjay, K Prabakaran, K Baskar Materials Chemistry and Physics 240, 122189, 2020	24	2020

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