Gang Niu

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Thomas SchroederLeibniz-Institut für Kristallzüchtung (IKZ); Professor in Physics at Humboldt Universität zu BerlinAdresse e-mail validée de ikz-berlin.de
Bertrand VilquinReader, Ecole centrale de Lyon (France)Adresse e-mail validée de ec-lyon.fr
Ya-Hong XieUniversity of California Los Angeles, Materials Sciences & EngineeringAdresse e-mail validée de ucla.edu
Guillaume Saint-GironsDirecteur de recherches CNRSAdresse e-mail validée de ec-lyon.fr
Christian WengerIHP GmbH - Leibniz institute for innovative microelectronicsAdresse e-mail validée de ihp-microelectronics.com
Giovanni CapelliniFull Professor, Università Roma Tre and IHP Leibniz Institute for High Performance MicroelectronicsAdresse e-mail validée de uniroma3.it
Lambert AlffTU DarmstadtAdresse e-mail validée de tu-darmstadt.de
Federico BoscheriniCNR - Istituto Officina dei Materiali (IOM), TriesteAdresse e-mail validée de unibo.it
Jean-Luc MauriceLPICM, CNRS-École polytechniqueAdresse e-mail validée de polytechnique.edu
Jose PenuelasAssociate Professor - Institut des Nanotechnologies de LyonAdresse e-mail validée de ec-lyon.fr
Emmanuel DefayLuxembourg Institute of Science and TechnologyAdresse e-mail validée de list.lu
Julien RaultSwitching Group - ABB Research CenterAdresse e-mail validée de ch.abb.com
Yuji YamamotoIHPAdresse e-mail validée de ihp-microelectronics.com
Pancotti AAssistant Professor, Federal University of Goiás - UFGAdresse e-mail validée de ufg.br
Andreas SchäferFriedrich-Alexander-Universität Erlangen-NürnbergAdresse e-mail validée de informatik.uni-erlangen.de
Francesco d'AcapitoCNR-IOM-OGG c/o ESRF LISA CRG GrenobleAdresse e-mail validée de esrf.fr
Florencio SánchezInstituto de Ciencia de Materiales de Barcelona (ICMAB - CSIC)Adresse e-mail validée de icmab.es
Jaroslaw DabrowskiIHPAdresse e-mail validée de ihp-microelectronics.com
Matthieu CueffLaboratoire TIMAAdresse e-mail validée de imag.fr
Mario El KazziGroup Leader at PSIAdresse e-mail validée de PSI.ch

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Gang Niu

Xi'an Jiaotong University

Adresse e-mail validée de mail.xjtu.edu.cn

Epitaxy Oxides Ferroelectric Germanium RRAM


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
Development of an optimized condition-based maintenance system by data fusion and reliability-centered maintenance G Niu, BS Yang, M Pecht Reliability engineering & system safety 95 (7), 786-796, 2010	415	2010
Multi-agent decision fusion for motor fault diagnosis G Niu, T Han, BS Yang, ACC Tan Mechanical Systems and Signal Processing 21 (3), 1285-1299, 2007	182	2007
Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device A Di Bartolomeo, F Giubileo, G Luongo, L Iemmo, N Martucciello, G Niu, ... 2D Materials 4 (1), 015024, 2016	171	2016
Spectroscopic Signatures of AA′ and AB Stacking of Chemical Vapor Deposited Bilayer MoS₂ M Xia, B Li, K Yin, G Capellini, G Niu, Y Gong, W Zhou, PM Ajayan, ... ACS nano 9 (12), 12246-12254, 2015	150	2015
Hybrid graphene/silicon Schottky photodiode with intrinsic gating effect A Di Bartolomeo, G Luongo, F Giubileo, N Funicello, G Niu, T Schroeder, ... 2D Materials 4 (2), 025075, 2017	147	2017
Epitaxy of BaTiO3 thin film on Si (001) using a SrTiO3 buffer layer for non-volatile memory application G Niu, S Yin, G Saint-Girons, B Gautier, P Lecoeur, V Pillard, G Hollinger, ... Microelectronic Engineering 88 (7), 1232-1235, 2011	135	2011
Control of Switching Modes and Conductance Quantization in Oxygen Engineered HfO_x based Memristive Devices SU Sharath, S Vogel, L Molina‐Luna, E Hildebrandt, C Wenger, J Kurian, ... Advanced Functional Materials 27 (32), 1700432, 2017	126	2017
Intelligent condition monitoring and prognostics system based on data-fusion strategy G Niu, BS Yang Expert Systems with Applications 37 (12), 8831-8840, 2010	125	2010
Data-driven technology for engineering systems health management G Niu Springer Singapore 10, 978-981, 2017	122	2017
Toward a Reliable Synaptic Simulation Using Al-Doped HfO₂ RRAM S Roy, G Niu, Q Wang, Y Wang, Y Zhang, H Wu, S Zhai, P Shi, S Song, ... ACS applied materials & interfaces 12 (9), 10648-10656, 2020	117	2020
Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach G Capellini, G Kozlowski, Y Yamamoto, M Lisker, C Wenger, G Niu, ... Journal of Applied Physics 113 (1), 2013	117	2013
Motor fault diagnostics based on current signatures: A review G Niu, X Dong, Y Chen IEEE Transactions on Instrumentation and Measurement 72, 1-19, 2023	113	2023
Molecular beam epitaxy of SrTiO3 on Si (001): Early stages of the growth and strain relaxation G Niu, G Saint-Girons, B Vilquin, G Delhaye, JL Maurice, C Botella, ... Applied Physics Letters 95 (6), 062902-062902-3, 2009	110	2009
Dempster–Shafer regression for multi-step-ahead time-series prediction towards data-driven machinery prognosis G Niu, BS Yang Mechanical systems and signal processing 23 (3), 740-751, 2009	108	2009
Geometric conductive filament confinement by nanotips for resistive switching of HfO₂-RRAM devices with high performance G Niu, P Calka, M Auf der Maur, F Santoni, S Guha, M Fraschke, ... Scientific reports 6 (1), 25757, 2016	103	2016
Oxygen vacancy induced room temperature ferromagnetism in Pr-doped CeO2 thin films on silicon G Niu, E Hildebrandt, MA Schubert, F Boscherini, MH Zoellner, L Alff, ... ACS applied materials & interfaces 6 (20), 17496-17505, 2014	103	2014
Superior fracture toughness in a high-strength austenitic steel with heterogeneous lamellar microstructure G Niu, HS Zurob, RDK Misra, Q Tang, Z Zhang, MT Nguyen, L Wang, ... Acta Materialia 226, 117642, 2022	99	2022
Decision-level fusion based on wavelet decomposition for induction motor fault diagnosis using transient current signal G Niu, A Widodo, JD Son, BS Yang, DH Hwang, DS Kang Expert Systems with Applications 35 (3), 918-928, 2008	90	2008
Epitaxial growth of β-Ga2O3 thin films on Ga2O3 and Al2O3 substrates by using pulsed laser deposition Y An, L Dai, Y Wu, B Wu, Y Zhao, T Liu, H Hao, Z Li, G Niu, J Zhang, ... Journal of Advanced Dielectrics 9 (04), 1950032, 2019	85	2019
Chemistry and Atomic Distortion at the Surface of an Epitaxial BaTiO₃ Thin Film after Dissociative Adsorption of Water JL Wang, F Gaillard, A Pancotti, B Gautier, G Niu, B Vilquin, V Pillard, ... The Journal of Physical Chemistry C 116 (41), 21802-21809, 2012	84	2012

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