On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration S Takagi, A Toriumi, M Iwase, H Tango
IEEE Transactions on Electron Devices 41 (12), 2357-2362, 1994
1667 1994 Comparative study of phonon‐limited mobility of two‐dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field‐effect transistors S Takagi, JL Hoyt, JJ Welser, JF Gibbons
Journal of Applied Physics 80 (3), 1567-1577, 1996
601 1996 Method of manufacturing a substrate using an SiGe layer N Sugiyama, A Kurobe, T Tezuka, T Mizuno, S Takagi
US Patent 6,607,948, 2003
549 2003 On the universality of inversion layer mobility in Si MOSFET's: Part II-effects of surface orientation S Takagi, A Toriumi, M Iwase, H Tango
IEEE Transactions on Electron Devices 41 (12), 2363-2368, 1994
455 1994 Carrier-transport-enhanced channel CMOS for improved power consumption and performance S Takagi, T Iisawa, T Tezuka, T Numata, S Nakaharai, N Hirashita, ...
IEEE transactions on electron devices 55 (1), 21-39, 2007
436 2007 Evidence of low interface trap density in GeO2∕ Ge metal-oxide-semiconductor structures fabricated by thermal oxidation H Matsubara, T Sasada, M Takenaka, S Takagi
Applied physics letters 93 (3), 2008
413 2008 Fabrication of strained Si on an ultrathin SiGe-on-insulator virtual substrate with a high-Ge fraction T Tezuka, N Sugiyama, S Takagi
Applied Physics Letters 79 (12), 1798-1800, 2001
400 2001 Strain dependence of the performance enhancement in strained-Si n-MOSFETs J Welser, JL Hoyt, SI Takagi, JF Gibbons
Proceedings of 1994 IEEE International Electron Devices Meeting, 373-376, 1994
390 1994 Characterization of 7-nm-thick strained Ge-on-insulator layer fabricated by Ge-condensation technique S Nakaharai, T Tezuka, N Sugiyama, Y Moriyama, S Takagi
Applied Physics Letters 83 (17), 3516-3518, 2003
352 2003 Experimental study on carrier transport mechanism in ultrathin-body SOI nand p-MOSFETs with SOI thickness less than 5 nm K Uchida, H Watanabe, A Kinoshita, J Koga, T Numata, S Takagi
Digest. International Electron Devices Meeting,, 47-50, 2002
329 2002 Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technology T Mizuno, S Takagi, N Sugiyama, H Satake, A Kurobe, A Toriumi
IEEE Electron Device Letters 21 (5), 230-232, 2000
295 2000 A novel fabrication technique of ultrathin and relaxed SiGe buffer layers with high Ge fraction for sub-100 nm strained silicon-on-insulator MOSFETs T Tezuka, N Sugiyama, T Mizuno, M Suzuki, S Takagi
Japanese Journal of Applied Physics 40 (4S), 2866, 2001
292 2001 High-Mobility Ge pMOSFET With 1-nm EOT R Zhang, T Iwasaki, N Taoka, M Takenaka, S Takagi
IEEE Transactions on Electron Devices 59 (2), 335-341, 2011
284 * 2011 Bending experiment on pentacene field-effect transistors on plastic films T Sekitani, Y Kato, S Iba, H Shinaoka, T Someya, T Sakurai, S Takagi
Applied Physics Letters 86 (7), 2005
283 2005 Semiconductor device N Sugiyama, T Tezuka, T Mizuno, S Takagi
US Patent 6,774,390, 2004
255 2004 Semiconductor device S Takagi
US Patent 6,339,232, 2002
254 2002 Efficient low-loss InGaAsP/Si hybrid MOS optical modulator JH Han, F Boeuf, J Fujikata, S Takahashi, S Takagi, M Takenaka
Nature Photonics 11 (8), 486-490, 2017
235 2017 High-Mobility Ge p- and n-MOSFETs With 0.7-nm EOT Using R Zhang, PC Huang, JC Lin, N Taoka, M Takenaka, S Takagi
IEEE Transactions on Electron Devices 60 (3), 927-934, 2013
234 2013 Experimental evidence of inelastic tunneling in stress-induced leakage current S Takagi, N Yasuda, A Toriumi
IEEE Transactions on Electron Devices 46 (2), 335-341, 1999
220 1999 Al2O3/GeOx/Ge gate stacks with low interface trap density fabricated by electron cyclotron resonance plasma postoxidation R Zhang, T Iwasaki, N Taoka, M Takenaka, S Takagi
Applied Physics Letters 98 (11), 2011
213 2011