Jing Li (李景）

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Jingyu Lin (林景瑜）Linda Whitacre Endowed Chair & Horn Distinguished Professor of ECE, Texas Tech UniversityAdresse e-mail validée de ttu.edu
Hongxing Jiang (江红星）Ed Whitacre Endowed Chair and P. W. Horn Distinguished Professor of ECE, Texas Tech UniversityAdresse e-mail validée de ttu.edu
Mim Lal NakarmiProfessor of Physics, Brooklyn College-CUNYAdresse e-mail validée de brooklyn.cuny.edu
Sashikanth MajetyEngineering Technology Development Manager, Intel CorporationAdresse e-mail validée de intel.com
Sam GrenadierGraduate Research Assistant, Texas Tech UniversityAdresse e-mail validée de ttu.edu
Avisek MaityLTD Process Engineer, Intel CorpAdresse e-mail validée de intel.com
Zhaoyang FanProfessor of Electrical Engineering, Arizona State UniversityAdresse e-mail validée de asu.edu
Tri Cao DoanSenior Product Development Engineer, PhD, Intel, OregonAdresse e-mail validée de intel.com
Neeraj NepalUS Naval Research LaboratoryAdresse e-mail validée de nrl.navy.mil
Krishna AryalProcess Technology Development, Intel CorporationAdresse e-mail validée de intel.com
Prof. Donald LieK.S. Lu Regents Chair Professor, Texas Tech UniversityAdresse e-mail validée de ttu.edu
Xiaozhang DuAdresse e-mail validée de ttu.edu
Suhuai WeiEastern Institute of Technology, Ningbo, ChinaAdresse e-mail validée de eitech.edu.cn
Jagat ShakyaIntel CorporationAdresse e-mail validée de ksu.edu
T. M. Al tahtamouniProfessor of Physics and Materials Science at Qatar UniversityAdresse e-mail validée de qu.edu.qa
Rongqing HuiProfessor, Electrical Engineering and Computer Science, the University of KansasAdresse e-mail validée de ku.edu
Yaqiong YanTexas Tech UniversityAdresse e-mail validée de ttu.edu
Xianan Cao (X. A. Cao)West Virginia UniversityAdresse e-mail validée de mix.wvu.edu
Rajendra DahalIntel Corporation
Ashok SedhainPrincipal Process Engineer Metrology, Globalfoundries

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Jing Li (李景）

Research Professor of Nanophotonics center, Texas Tech University

Adresse e-mail validée de ttu.edu

semiconductor MOCVD


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
Band structure and fundamental optical transitions in wurtzite AlN J Li, KB Nam, ML Nakarmi, JY Lin, HX Jiang, P Carrier, SH Wei Applied Physics Letters 83 (25), 5163-5165, 2003	471	2003
InGaN/GaN multiple quantum well solar cells with long operating wavelengths R Dahal, B Pantha, J Li, JY Lin, HX Jiang Applied Physics Letters 94 (6), 063505, 2009	466	2009
Unique optical properties of alloys and related ultraviolet emitters KB Nam, J Li, ML Nakarmi, JY Lin, HX Jiang Applied physics letters 84 (25), 5264-5266, 2004	431	2004
III-Nitride full-scale high-resolution microdisplays J Day, J Li, DYC Lie, C Bradford, JY Lin, HX Jiang Applied Physics Letters 99 (3), 031116, 2011	395	2011
III-nitride blue microdisplays HX Jiang, SX Jin, J Li, J Shakya, JY Lin Applied Physics Letters 78 (9), 1303-1305, 2001	390	2001
Mg acceptor level in AlN probed by deep ultraviolet photoluminescence KB Nam, ML Nakarmi, J Li, JY Lin, HX Jiang Applied physics letters 83 (5), 878-880, 2003	367	2003
GaN microdisk light emitting diodes SX Jin, J Li, JZ Li, JY Lin, HX Jiang Applied Physics Letters 76 (5), 631-633, 2000	275	2000
InGaN/GaN multiple quantum well concentrator solar cells R Dahal, J Li, K Aryal, JY Lin, HX Jiang Applied Physics Letters 97 (7), 073115, 2010	258	2010
deep ultraviolet photodetectors based on AlN J Li, ZY Fan, R Dahal, ML Nakarmi, JY Lin, HX Jiang Applied physics letters 89 (21), 213510, 2006	245	2006
Optical and electrical properties of Mg-doped p-type J Li, TN Oder, ML Nakarmi, JY Lin, HX Jiang Applied physics letters 80 (7), 1210-1212, 2002	237	2002
Epitaxially grown semiconducting hexagonal boron nitride as a deep ultraviolet photonic material R Dahal, J Li, S Majety, BN Pantha, XK Cao, JY Lin, HX Jiang Applied Physics Letters 98 (21), 211110, 2011	235	2011
Temperature and compositional dependence of the energy band gap of AlGaN alloys N Nepal, J Li, ML Nakarmi, JY Lin, HX Jiang Applied Physics Letters 87 (24), 242104, 2005	228	2005
Micro-emitter array based full-color micro-display Z Fan, J Li, J Lin, H Jiang US Patent 8,058,663, 2011	225	2011
InGaN/GaN quantum well interconnected microdisk light emitting diodes SX Jin, J Li, JY Lin, HX Jiang Applied Physics Letters 77 (20), 3236-3238, 2000	190	2000
Enhanced p-type conduction in GaN and AlGaN by Mg-δ-doping ML Nakarmi, KH Kim, J Li, JY Lin, HX Jiang Applied physics letters 82 (18), 3041-3043, 2003	188	2003
Time-resolved photoluminescence studies of alloys HS Kim, RA Mair, J Li, JY Lin, HX Jiang Applied Physics Letters 76 (10), 1252-1254, 2000	175	2000
Dielectric strength, optical absorption, and deep ultraviolet detectors of hexagonal boron nitride epilayers J Li, S Majety, R Dahal, WP Zhao, JY Lin, HX Jiang Applied Physics Letters 101 (17), 171112, 2012	171	2012
Correlation between optoelectronic and structural properties and epilayer thickness of AlN BN Pantha, R Dahal, ML Nakarmi, N Nepal, J Li, JY Lin, HX Jiang, ... Applied physics letters 90 (24), 241101, 2007	166	2007
Hydrogen generation by solar water splitting using p-InGaN photoelectrochemical cells K Aryal, BN Pantha, J Li, JY Lin, HX Jiang Applied Physics Letters 96 (5), 052110, 2010	162	2010
Thermoelectric properties of alloys BN Pantha, R Dahal, J Li, JY Lin, HX Jiang, G Pomrenke Applied Physics Letters 92 (4), 042112, 2008	158	2008

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