Novel epitaxial nickel aluminide-silicide with low Schottky-barrier and series resistance for enhanced performance of dopant-segregated source/drain N-channel MuGFETs RTP Lee, TY Liow, KM Tan, AEJ Lim, CS Ho, KM Hoe, MY Lai, ...
2007 IEEE Symposium on VLSI Technology, 108-109, 2007
255 2007 Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applications EH Toh, GH Wang, G Samudra, YC Yeo
Journal of Applied Physics 103 (10), 2008
226 2008 Characterization and physical origin of fast Vth transient in NBTI of pMOSFETs with SiON dielectric C Shen, MF Li, CE Foo, T Yang, DM Huang, A Yap, GS Samudra, YC Yeo
2006 International Electron Devices Meeting, 1-4, 2006
187 2006 Device physics and design of double-gate tunneling field-effect transistor by silicon film thickness optimization EH Toh, GH Wang, G Samudra, YC Yeo
Applied physics letters 90 (26), 2007
163 2007 Enhanced performance in 50 nm N-MOSFETs with silicon-carbon source/drain regions KW Ang, KJ Chui, V Bliznetsov, A Du, N Balasubramanian, MF Li, ...
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004
162 2004 Nonvolatile flash memory device using Ge nanocrystals embedded in HfAlO high-/spl kappa/tunneling and control oxides: Device fabrication and electrical performance JH Chen, YQ Wang, WJ Yoo, YC Yeo, G Samudra, DSH Chan, AY Du, ...
IEEE transactions on electron devices 51 (11), 1840-1848, 2004
158 2004 Lattice strain analysis of transistor structures with silicon–germanium and silicon–carbon source∕ drain stressors KW Ang, KJ Chui, V Bliznetsov, CH Tung, A Du, N Balasubramanian, ...
Applied Physics Letters 86 (9), 2005
148 2005 Device physics and guiding principles for the design of double-gate tunneling field effect transistor with silicon-germanium source heterojunction EH Toh, GH Wang, L Chan, G Samudra, YC Yeo
Applied Physics Letters 91 (24), 2007
136 2007 Effects of gate field plates on the surface state related current collapse in AlGaN/GaN HEMTs H Huang, YC Liang, GS Samudra, TF Chang, CF Huang
IEEE Transactions on Power Electronics 29 (5), 2164-2173, 2013
131 2013 Tunneling field-effect transistor: Effect of strain and temperature on tunneling current PF Guo, LT Yang, Y Yang, L Fan, GQ Han, GS Samudra, YC Yeo
IEEE Electron Device Letters 30 (9), 981-983, 2009
123 2009 Device design and scalability of a double-gate tunneling field-effect transistor with silicon–germanium source EH Toh, GH Wang, L Chan, D Sylvester, CH Heng, GS Samudra, YC Yeo
Japanese Journal of Applied Physics 47 (4S), 2593, 2008
117 2008 A variational approach to the two-dimensional nonlinear Poisson's equation for the modeling of tunneling transistors C Shen, SL Ong, CH Heng, G Samudra, YC Yeo
IEEE Electron Device Letters 29 (11), 1252-1255, 2008
112 2008 Strained n-channel FinFETs with 25 nm gate length and silicon-carbon source/drain regions for performance enhancement TY Liow, KM Tan, R Lee, A Du, CH Tung, G Samudra, WJ Yoo, ...
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 56-57, 2006
109 2006 Oxide-bypassed VDMOS (OBVDMOS): An alternative to superjunction high voltage MOS power devices YC Liang, KP Gan, GS Samudra
IEEE Electron Device Letters 22 (8), 407-409, 2001
98 2001 Strained n-Channel FinFETs Featuring In Situ Doped Silicon–Carbon TY Liow, KM Tan, D Weeks, RTP Lee, M Zhu, KM Hoe, CH Tung, M Bauer, ...
IEEE Transactions on Electron Devices 55 (9), 2475-2483, 2008
94 2008 A simulation study of graphene-nanoribbon tunneling FET with heterojunction channel KT Lam, D Seah, SK Chin, SB Kumar, G Samudra, YC Yeo, G Liang
IEEE Electron Device Letters 31 (6), 555-557, 2010
82 2010 New insights into carrier transport in n-MOSFETs A Lochtefeld, IJ Djomehri, G Samudra, DA Antoniadis
IBM Journal of research and development 46 (2.3), 347-357, 2002
78 2002 Tungsten nanocrystals embedded in high-k materials for memory application SK Samanta, WJ Yoo, G Samudra, ES Tok, LK Bera, N Balasubramanian
Applied Physics Letters 87 (11), 2005
76 2005 Device physics and characteristics of graphene nanoribbon tunneling FETs SK Chin, D Seah, KT Lam, GS Samudra, G Liang
IEEE transactions on electron devices 57 (11), 3144-3152, 2010
74 2010 N-MOSFET with silicon–carbon source/drain for enhancement of carrier transport KJ Chui, KW Ang, N Balasubramanian, MF Li, GS Samudra, YC Yeo
IEEE transactions on electron devices 54 (2), 249-256, 2007
74 2007 