1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density R Suzuki, N Taoka, M Yokoyama, S Lee, SH Kim, T Hoshii, T Yasuda, ...
Applied Physics Letters 100 (13), 2012
194 2012 Self-aligned metal source/drain In x Ga 1− x As n-MOSFETs using Ni-InGaAs alloy SH Kim, M Yokoyama, N Taoka, R Iida, S Lee, R Nakane, Y Urabe, ...
Electron Devices Meeting (IEDM), 2010 IEEE International, 26.6. 1-26.6. 4, 2010
141 * 2010 A highly-efficient, concentrating-photovoltaic/thermoelectric hybrid generator TH Kil, S Kim, DH Jeong, DM Geum, S Lee, SJ Jung, S Kim, C Park, ...
Nano energy 37, 242-247, 2017
112 2017 III–V/Ge channel MOS device technologies in nano CMOS era S Takagi, R Zhang, J Suh, SH Kim, M Yokoyama, K Nishi, M Takenaka
Japanese Journal of Applied Physics 54 (6S1), 06FA01, 2015
107 2015 High Ion/Ioff and low subthreshold slope planar-type InGaAs tunnel field effect transistors with Zn-diffused source junctions M Noguchi, SH Kim, M Yokoyama, O Ichikawa, T Osada, M Hata, ...
Journal of Applied Physics 118 (4), 2015
101 2015 High mobility CMOS technologies using III–V/Ge channels on Si platform S Takagi, SH Kim, M Yokoyama, R Zhang, N Taoka, Y Urabe, T Yasuda, ...
Solid-state electronics 88, 2-8, 2013
97 2013 Ultra-high-throughput Production of III-V/Si Wafer for Electronic and Photonic Applications WJC Dae-Myeong Geum, Min-Su Park, Ju Young Lim, Hyun-Duk Yang, Jin Dong Song ...
Scientific Reports 6 (20610), 2016
90 2016 Fabrication of a vertically-stacked passive-matrix micro-LED array structure for a dual color display CM Kang, DJ Kong, JP Shim, S Kim, SB Choi, JY Lee, JH Min, DJ Seo, ...
Optics Express 25 (3), 2489-2495, 2017
76 2017 Sub-10-nm Extremely Thin Body InGaAs-on-Insulator MOSFETs on Si Wafers With Ultrathin M Yokoyama, R Iida, S Kim, N Taoka, Y Urabe, H Takagi, T Yasuda, ...
IEEE electron device letters 32 (9), 1218-1220, 2011
75 2011 Hybrid full-color inorganic light-emitting diodes integrated on a single wafer using selective area growth and adhesive bonding CM Kang, JY Lee, DJ Kong, JP Shim, S Kim, SH Mun, SY Choi, MD Park, ...
ACS photonics 5 (11), 4413-4422, 2018
72 2018 High Performance Tri-Gate Extremely Thin-Body InAs-On-Insulator MOSFETs With High Short Channel Effect Immunity and SH Kim, M Yokoyama, R Nakane, O Ichikawa, T Osada, M Hata, ...
IEEE Transactions on Electron Devices 61 (5), 1354-1360, 2014
68 2014 Monolithic integration of AlGaInP-based red and InGaN-based green LEDs via adhesive bonding for multicolor emission CM Kang, SJ Kang, SH Mun, SY Choi, JH Min, S Kim, JP Shim, DS Lee
Scientific reports 7 (1), 1-9, 2017
66 2017 Extremely-thin-body InGaAs-on-insulator MOSFETs on Si fabricated by direct wafer bonding M Yokoyama, R Iida, SH Kim, N Taoka, Y Urabe, T Yasuda, H Takagi, ...
2010 International Electron Devices Meeting, 3.1. 1-3.1. 4, 2010
63 2010 Impact of Fermi level pinning inside conduction band on electron mobility of Inx Ga1−x As MOSFETs and mobility enhancement by pinning modulation N Taoka, M Yokoyama, SH Kim, R Suzuki, R Iida, S Lee, T Hoshii, ...
2011 International Electron Devices Meeting, 27.2. 1-27.2. 4, 2011
62 2011 Bioinspired photoresponsive single transistor neuron for a neuromorphic visual system JK Han, DM Geum, MW Lee, JM Yu, SK Kim, S Kim, YK Choi
Nano Letters 20 (12), 8781-8788, 2020
61 2020 Formation of III–V-on-insulator structures on Si by direct wafer bonding M Yokoyama, R Iida, Y Ikku, S Kim, H Takagi, T Yasuda, H Yamada, ...
Semiconductor science and technology 28 (9), 094009, 2013
61 2013 III-V/Ge MOS device technologies for low power integrated systems MT S Takagi, M Noguchi, M Kim, S-H Kim, C-Y Chang, M Yokoyama, K Nishi, R ...
Solid-State Electronics, 2016
58 2016 Strategy toward the fabrication of ultrahigh-resolution micro-LED displays by bonding interface-engineered vertical stacking and surface passivation DM Geum, SK Kim, CM Kang, SH Moon, J Kyhm, JH Han, DS Lee, ...
Nanoscale 11, 23139-23148, 2019
55 2019 Impact of atomic layer deposition temperature on HfO2/InGaAs metal-oxide-semiconductor interface properties R Suzuki, N Taoka, M Yokoyama, SH Kim, T Hoshii, T Maeda, T Yasuda, ...
Journal of Applied Physics 112 (8), 2012
54 2012 CMOS integration of InGaAs nMOSFETs and Ge pMOSFETs with self-align Ni-based metal S/D using direct wafer bonding M Yokoyama, SH Kim, R Zhang, N Taoka, Y Urabe, T Maeda, H Takagi, ...
2011 Symposium on VLSI Technology-Digest of Technical Papers, 60-61, 2011
54 2011 
Shinichi TakagiThe University of TokyoAdresse e-mail validée de ee.t.u-tokyo.ac.jp
