| 633-nm InGaN-based red LEDs grown on thick underlying GaN layers with reduced in-plane residual stress D Iida, Z Zhuang, P Kirilenko, M Velazquez-Rizo, MA Najmi, K Ohkawa Applied Physics Letters 116 (16), 2020 | 138 | 2020 |
| Demonstration of 621-nm-wavelength InGaN-based single-quantum-well LEDs with an external quantum efficiency of 4.3% at 10.1 A/cm2 D Iida, P Kirilenko, M Velazquez-Rizo, Z Zhuang, MA Najmi, K Ohkawa AIP Advances 12 (6), 2022 | 42 | 2022 |
| Microstructural analysis of N-polar InGaN directly grown on a ScAlMgO4 (0001) substrate M Velazquez-Rizo, MA Najmi, D Iida, P Kirilenko, K Ohkawa Applied Physics Express 15 (6), 065501, 2022 | 21 | 2022 |
| High crystallinity N-polar InGaN layers grown on cleaved ScAlMgO4 substrates P Kirilenko, MA Najmi, B Ma, A Shushanian, M Velazquez-Rizo, D Iida, ... AIP Advances 13 (4), 2023 | 7 | 2023 |
| Enhanced Efficiency InGaN/GaN Multiple Quantum Well Structures via Strain Engineering and Ultrathin Subwells Formed by V-Pit Sidewalls F Alreshidi, LR Chen, M Najmi, B Xin, H Alamoudi, G Melinte, N Wehbe, ... ACS Applied Optical Materials 2 (1), 220-229, 2024 | 5 | 2024 |
| Analysis of phonon transport through heterointerfaces of InGaN/GaN via Raman imaging using double-laser system: The effect of crystal defects at heterointerface T Nakayama, K Ito, B Ma, D Iida, MA Najmi, K Ohkawa, Y Ishitani Materials Science in Semiconductor Processing 150, 106905, 2022 | 4 | 2022 |
| Investigation of N-polar InGaN growth on misoriented ScAlMgO4 substrates MA Najmi, P Kirilenko, D Iida, K Ohkawa Scientific Reports 13 (1), 19332, 2023 | 3 | 2023 |
| Synthesis and photoluminescence of metal coated ZnO nanoparticles MA Shemis, MA Gondal, E Alkhazraji, M Najmi, M Abalkhail, I Khan, ... 2014 11th Annual High Capacity Optical Networks and Emerging/Enabling …, 2014 | 2 | 2014 |
| (10–13)-oriented semipolar GaN growth on (10–10) m-plane ScAlMgO 4 substrate MA Najmi, D Iida, K Ohkawa Japanese Journal of Applied Physics, 2024 | 1 | 2024 |
| Photoluminescence Emission Efficiency Analysis Methodology by Integrating Raman Spectroscopy of the A1(LO) and E2(high) Phonons in a GaInN/GaN … TEK Shwe, T Asaji, R Kimura, D Iida, MA Najmi, K Ohkawa, Y Ishitani physica status solidi (b), 2400057, 2024 | 1 | 2024 |
| Red light-emitting diode with full InGaN structure on ScAlMgO4 substrate MA Najmi, RS Jalmood, I Kotov, C Altinkaya, W Takeuchi, D Iida, ... Applied Physics Express, 2024 | | 2024 |
| Local augmentation of phonon transport at GaInN/GaN heterointerface by introducing a graded variation of InN mole fraction TEK Shwe, T Asaji, D Iida, MA Najmi, K Ohkawa, Y Ishitani Applied Physics Letters 125 (1), 2024 | | 2024 |
| Strain-compensated InGaN red LEDs grown by micro-flow-channel MOVPE K Ohkawa, M Velazquez-Rizo, M Najmi, D Iida Gallium Nitride Materials and Devices XIX, PC1288614, 2024 | | 2024 |
| Structural Engineering of III-Nitride Epilayers Using Lattice-matching-InGaN on ScAlMgO4 Substrate: Towards Efficient Long-Wavelength (Yellow/Red) Laser Diodes MA Najmi | | 2024 |
| (10 (1) over-bar3)-oriented semipolar GaN growth on (10 (1) over-bar0) m-plane ScAlMgO4 substrate M Najmi, D Iida, K Ohkawa IOP Publishing, 2024 | | 2024 |
| Simultaneous Growth Strategy of High-Optical-Efficiency GaN NWs on a Wide Range of Substrates by Pulsed Laser Deposition D Almalawi, S Lopatin, PR Edwards, B Xin, RC Subedi, MA Najmi, ... ACS omega 8 (49), 46804-46815, 2023 | | 2023 |
| Strain-compensated InGaN quantum-well red standard/micro-LEDs K Ohkawa, P Kirilenko, MA Najmi, M Velazquez-Rizo, Z Zhuang, D Iida Gallium Nitride Materials and Devices XVIII, 2023 | | 2023 |
| Demonstration of 621-nm-wavelength InGaN-based single-quantum-well LEDs with an external quantum efficiency of 4.3% at 10.1 A/cm2 editors-pick D Iida, P Kirilenko, M Velazquez-Rizo, Z Zhuang, MA Najmi, K Ohkawa AIP Publishing, 2022 | | 2022 |
| Analyses of phonon transport in InGaN/GaN heterostructures by Raman scattering spectroscopy using double lasers Y Ishitani, T Nakayama, K Ito, B Ma, D Iida, M Najmi, K Ohkawa | | 2022 |
| 665-nm-wavelength InGaN-based red LEDs with low forward voltage operation D Iida, Z Zhuang, P Kirilenko, M Velazquez-Rizo, MA Najmi, K Ohkawa Gallium Nitride Materials and Devices XVI 11686, 116862F, 2021 | | 2021 |
Daisuke IidaKing Abdullah University of Science and Technology (KAUST)Adresse e-mail validée de kaust.edu.sa