| Zr/oxidized diamond interface for high power Schottky diodes A Traore, P Muret, A Fiori, D Eon, E Gheeraert, J Pernot Applied Physics Letters 104 (5), 052105-052105-4, 2014 | 173 | 2014 |
| Hole transport in boron delta-doped diamond structures G Chicot, TN Tran Thi, A Fiori, F Jomard, E Gheeraert, E Bustarret, ... Applied Physics Letters 101 (16), 2012 | 50 | 2012 |
| Critical boron-doping levels for generation of dislocations in synthetic diamond MP Alegre, D Araujo, A Fiori, JC Pinero, F Lloret, MP Villar, P Achatz, ... Applied Physics Letters 105 (17), 2014 | 40 | 2014 |
| Electronic and physico-chemical properties of nanometric boron delta-doped diamond structures G Chicot, A Fiori, PN Volpe, TN Tran Thi, JC Gerbedoen, J Bousquet, ... Journal of Applied Physics 116 (8), 2014 | 38 | 2014 |
| Diamond Schottky diodes with ideality factors close to 1 A Fiori, T Teraji, Y Koide Applied Physics Letters 105 (13), 2014 | 33 | 2014 |
| In situ etching-back processes for a sharper top interface in boron delta-doped diamond structures A Fiori, TNT Thi, G Chicot, F Jomard, F Omnès, E Gheeraert, E Bustarret Diamond and related materials 24, 175-178, 2012 | 32 | 2012 |
| Improved depth resolution of secondary ion mass spectrometry profiles in diamond: A quantitative analysis of the delta-doping A Fiori, F Jomard, T Teraji, G Chicot, E Bustarret Thin Solid Films 557, 222-226, 2014 | 31 | 2014 |
| Atomic composition of WC/and Zr/O-terminated diamond Schottky interfaces close to ideality JC Pinero, D Araújo, A Fiori, A Traoré, MP Villar, D Eon, P Muret, J Pernot, ... Applied Surface Science 395, 200-207, 2017 | 30 | 2017 |
| Synchronized B and 13C diamond delta structures for an ultimate in-depth chemical characterization A Fiori, F Jomard, T Teraji, S Koizumi, J Isoya, E Gheeraert, E Bustarret Applied Physics Express 6 (4), 045801, 2013 | 30 | 2013 |
| Simulations of carrier confinement in boron δ‐doped diamond devices A Fiori, J Pernot, E Gheeraert, E Bustarret physica status solidi (a) 207 (9), 2084-2087, 2010 | 29 | 2010 |
| Mechanism of reverse current increase of vertical-type diamond Schottky diodes T Teraji, A Fiori, N Kiritani, S Tanimoto, E Gheeraert, Y Koide Journal of Applied Physics 122 (13), 2017 | 28 | 2017 |
| Boron concentration profiling by high angle annular dark field-scanning transmission electron microscopy in homoepitaxial δ-doped diamond layers D Araújo, MP Alegre, JC Pinero, A Fiori, E Bustarret, F Jomard Applied Physics Letters 103 (4), 2013 | 26 | 2013 |
| Stratigraphy of a diamond epitaxial three-dimensional overgrowth using doping superlattices F Lloret, A Fiori, D Araujo, D Eon, MP Villar, E Bustarret Applied Physics Letters 108 (18), 2016 | 19 | 2016 |
| Thermal stabilization and deterioration of the WC/p‐type diamond (100) Schottky‐barrier interface A Fiori, T Teraji, Y Koide physica status solidi (a) 211 (10), 2363-2366, 2014 | 19 | 2014 |
| Boron-doping proximity effects on dislocation generation during non-planar MPCVD homoepitaxial diamond growth F Lloret, D Eon, E Bustarret, A Fiori, D Araujo Nanomaterials 8 (7), 480, 2018 | 15 | 2018 |
| Boron-doped superlattices and Bragg mirrors in diamond A Fiori, J Bousquet, D Eon, F Omnès, E Bellet-Amalric, E Bustarret Applied Physics Letters 105 (8), 2014 | 13 | 2014 |
| Plasma etching phenomena in heavily boron-doped diamond growth A Fiori, T Teraji Diamond and Related Materials 76, 38-43, 2017 | 11 | 2017 |
| Comprehensive nanoscopic analysis of tungsten carbide/Oxygenated-diamond contacts for Schottky barrier diodes G Alba, D Leinen, MP Villar, R Alcántara, JC Piñero, A Fiori, T Teraji, ... Applied Surface Science 537, 147874, 2021 | 8 | 2021 |
| High resolution boron content profilometry at δ-doping epitaxial diamond interfaces by CTEM JC Piñero, F Lloret, MP Alegre, MP Villar, A Fiori, E Bustarret, D Araújo Applied Surface Science 461, 221-226, 2018 | 5 | 2018 |
| New generations of boron-doped diamond structures by delta-doping technique for power electronics: CVD growth and characterization A Fiori Université de Grenoble, 2012 | 5 | 2012 |
Julien PERNOTUniv. Grenoble Alpes - Institut Néel - CNRSAdresse e-mail validée de neel.cnrs.fr