| Diamond Schottky barrier diodes fabricated on sapphire-based freestanding heteroepitaxial diamond substrate T Kwak, J Lee, U Choi, B So, G Yoo, S Kim, O Nam Diamond and Related Materials 114, 108335, 2021 | 21 | 2021 |
| A nonpolar a-plane GaN grown on a hemispherical patterned r-plane sapphire substrate G Yoo, H Park, H Lim, S Lee, O Nam, Y Moon, C Lim, B Kong, H Cho Japanese Journal of Applied Physics 50 (4R), 042103, 2011 | 19 | 2011 |
| Defect reduction of SiNx embedded m-plane GaN grown by hydride vapor phase epitaxy S Woo, M Kim, B So, G Yoo, J Jang, K Lee, O Nam Journal of crystal growth 407, 6-10, 2014 | 11 | 2014 |
| High-quality non-polar/semi-polar semiconductor device on porous nitride semiconductor and manufacturing method thereof OH Nam, DH Lee, GH Yoo US Patent 9,153,737, 2015 | 10 | 2015 |
| Nonpolar a-GaN epilayers with reduced defect density using patterned r-plane sapphire substrates BH Kong, BO Jung, HK Cho, G Yoo, O Nam Thin solid films 544, 244-248, 2013 | 8 | 2013 |
| Improvement of crystal quality and optical property in (11-22) semipolar InGaN/GaN light emitting diodes grown on hemi-spherically patterned SiO2 mask D Min, G Yoo, Y Ryu, S Moon, K Lee, O Nam Journal of Ceramic Processing Research 14 (4), 521-524, 2013 | 7 | 2013 |
| Characterization of a-plane GaN layers grown on patterned r-sapphire substrate by metal organic chemical vapor deposition G Yoo, H Park, D Lee, H Lim, S Lee, B Kong, H Cho, H Park, H Lee, ... Current Applied Physics 11 (4), S90-S94, 2011 | 6 | 2011 |
| Growth of Semipolar InGaN Quantum Well Structure Using Self-Organized Nano-Masks on m-Sapphire Y Ryu, J Jeong, J Jang, K Lee, D Min, J Kim, M Kim, S Moon, G Yoo, ... Journal of Nanoscience and Nanotechnology 13 (9), 6429-6433, 2013 | 5 | 2013 |
| Electrical characteristics of metal–insulator diamond semiconductor Schottky barrier diode grown on heteroepitaxial diamond substrate S Han, T Kwak, U Choi, H Kang, G Yoo, S Kim, O Nam physica status solidi (a) 220 (6), 2200680, 2023 | 4 | 2023 |
| Boron‐Doped Single‐Crystal Diamond Growth on Heteroepitaxial Diamond Substrate Using Microwave Plasma Chemical Vapor Deposition T Kwak, J Lee, G Yoo, H Shin, U Choi, B So, S Kim, O Nam physica status solidi (a) 217 (12), 1900973, 2020 | 4 | 2020 |
| High-quality a-plane (11–20) GaN growth using double-lens structure on r-plane sapphire D Min, G Yoo, S Moon, J Kwak, H Kim, O Nam Journal of crystal growth 387, 86-90, 2014 | 4 | 2014 |
| Correlation between luminescence and defects in nonpolar and semipolar InGaN/GaN quantum wells on planar and patterned sapphire substrates S Lee, G Yoo, J Jang, Y Won, O Nam Electronic Materials Letters 10 (1), 67-72, 2014 | 4 | 2014 |
| Properties of Si doped (11-20) a-plane GaN grown with different buffer layers C Jung, J Hwang, G Yoo, D Min, Y Ryu, S Moon, M Kim, O Nam, K Shim Journal of Ceramic Processing Research 15 (2), 2014 | 3 | 2014 |
| Improved Performance of (112̄2) Semipolar InGaN/GaN Light-Emitting Diodes Grown Using a Hemispherically Patterned SiO2 Mask D Min, G Yoo, Y Ryu, S Moon, K Nam, H Lim, O Nam Japanese Journal of Applied Physics 52 (10S), 10MA03, 2013 | 3 | 2013 |
| High-quality non-polar/semi-polar semiconductor element on an unevenly patterned substrate and a production method therefor OH Nam, GH Yoo US Patent App. 13/392,410, 2012 | 3 | 2012 |
| Overgrowth of single crystal diamond using defect-selective etching and epitaxy technique in chemical vapor deposition J Lee, T Kwak, G Yoo, S Kim, O Nam Journal of Nanoscience and Nanotechnology 21 (8), 4412-4417, 2021 | 2 | 2021 |
| Method of forming a non-polar/semi-polar semiconductor template layer on unevenly patterned substrate OH Nam, GH Yoo US Patent 9,099,609, 2015 | 1 | 2015 |
| Characterization of a-plane InGaN light-emitting diodes with a SiNx interlayer grown on a patterned sapphire substrate by metal–organic chemical vapor deposition G Yoo, D Min, K Lee, J Jang, S Moon, S Chae, J Kim, O Nam Japanese Journal of Applied Physics 53 (11), 111001, 2014 | 1 | 2014 |
| Method for manufacturing diamond substrate OH Nam, UH Choi, GH Yoo US Patent 11,699,587, 2023 | | 2023 |
| Improvement of crystal quality in semipolar GaN layer by using self-organized nanomasks on m-sapphire Y Ryu, J Jeong, J Jang, K Lee, D Min, J Kim, M Kim, S Moon, G Yoo, ... Journal of Ceramic Processing Research 14 (4), 587-590, 2013 | | 2013 |
