Daniel Hägele

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Robert A. KaindlDepartment of Physics and CXFEL Laboratory, Arizona State UniversityAdresse e-mail validée de asu.edu
Jens HübnerInstitute for Solid State Physics, Leibniz Universität Hannover, GermanyAdresse e-mail validée de nano.uni-hannover.de
Andreas Dirk WieckProfessor für Physik, Ruhr-Universität BochumAdresse e-mail validée de rub.de
Wolfgang StolzProfessor der Physik, Philipps-Universität MarburgAdresse e-mail validée de physik.uni-marburg.de
Werner WegscheiderProfessor für Physik, ETH ZürichAdresse e-mail validée de phys.ethz.ch
Leonid GolubIoffe InstituteAdresse e-mail validée de coherent.ioffe.ru
Franck NataliAssociate Professor in Physics, Victoria University ot Wellington; CTO and Co-Founder LiquiumAdresse e-mail validée de vuw.ac.nz
Galina KhitrovaProfessor of Optical Sciences, University of ArizonaAdresse e-mail validée de optics.arizona.edu
Rolf HaugLeibniz Universität HannoverAdresse e-mail validée de nano.uni-hannover.de
Oliver GutfleischProfessor for Functional Materials, TU Darmstadt, Technische Universität Darmstadt, TechnicalAdresse e-mail validée de fm.tu-darmstadt.de
Hiroshi AMANO (天野　浩)Nagoya University (名古屋大学)Adresse e-mail validée de nuee.nagoya-u.ac.jp
Nils C. GerhardtPhotonics and Terahertztechnology, Ruhr-University Bochum, GermanyAdresse e-mail validée de rub.de
Chih Wei "Chi" LaiMichigan State UniversityAdresse e-mail validée de berkeley.edu
Hans Christian SchneiderPhysics Department and Research Center OPTIMAS, University of Kaiserslautern-Landau (RPTU)Adresse e-mail validée de rptu.de

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Daniel Hägele

Professor of Experimental Physics, Ruhr University Bochum

Adresse e-mail validée de rub.de

Quantum noise Signal Processing Caloric Materials Semiconductors Infrared Thermography


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
Ultrafast terahertz probes of transient conducting and insulating phases in an electron–hole gas RA Kaindl, MA Carnahan, D Hägele, R Lövenich, DS Chemla Nature 423 (6941), 734-738, 2003	534	2003
Spin transport in GaAs D Hägele, M Oestreich, WW Rühle, N Nestle, K Eberl Applied physics letters 73 (11), 1580-1582, 1998	302	1998
Spin injection into semiconductors M Oestreich, J Hübner, D Hägele, PJ Klar, W Heimbrodt, WW Rühle, ... Applied physics letters 74 (9), 1251-1253, 1999	286	1999
Laser threshold reduction in a spintronic device J Rudolph, D Hägele, HM Gibbs, G Khitrova, M Oestreich Applied physics letters 82 (25), 4516-4518, 2003	243	2003
Spin noise spectroscopy in GaAs M Oestreich, M Römer, RJ Haug, D Hägele Physical review letters 95 (21), 216603, 2005	236	2005
Transient terahertz spectroscopy of excitons and unbound carriers in quasi-two-dimensional electron-hole gases RA Kaindl, D Hägele, MA Carnahan, DS Chemla Physical Review B—Condensed Matter and Materials Physics 79 (4), 045320, 2009	211	2009
Anomalous Spin Dephasing in (110) GaAs Quantum Wells:<? format?> Anisotropy and Intersubband Effects S Döhrmann, D Hägele, J Rudolph, M Bichler, D Schuh, M Oestreich Physical review letters 93 (14), 147405, 2004	204	2004
Room-temperature threshold reduction in vertical-cavity surface-emitting lasers by injection of spin-polarized electrons J Rudolph, S Döhrmann, D Hägele, M Oestreich, W Stolz Applied Physics Letters 87 (24), 2005	128	2005
Optical orientation of electron spins in GaAs quantum wells S Pfalz, R Winkler, T Nowitzki, D Reuter, AD Wieck, D Hägele, ... Physical Review B—Condensed Matter and Materials Physics 71 (16), 165305, 2005	124	2005
Spin injection, spin transport and spin coherence M Oestreich, M Bender, J Hübner, D Hägele, WW Rühle, T Hartmann, ... Semiconductor science and technology 17 (4), 285, 2002	95	2002
Circular photogalvanic effect at inter-band excitation in semiconductor quantum wells VV Bel'kov, SD Ganichev, P Schneider, C Back, M Oestreich, J Rudolph, ... Solid state communications 128 (8), 283-286, 2003	79	2003
Temperature dependence of electron spin relaxation in bulk GaN JH Buß, J Rudolph, F Natali, F Semond, D Hägele Physical Review B—Condensed Matter and Materials Physics 81 (15), 155216, 2010	78	2010
Spintronics: Spin electronics and optoelectronics in semiconductors M Oestreich, J Hübner, D Hägele, M Bender, N Gerhardt, M Hofmann, ... Advances in Solid State Physics, 173-186, 2001	69	2001
Temperature-dependent electron Landé factor and the interband matrix element of GaAs J Hübner, S Döhrmann, D Hägele, M Oestreich Physical Review B—Condensed Matter and Materials Physics 79 (19), 193307, 2009	64	2009
Anisotropic electron spin relaxation in bulk GaN JH Buss, J Rudolph, F Natali, F Semond, D Hägele Applied Physics Letters 95 (19), 2009	48	2009
Ultrafast spin noise spectroscopy S Starosielec, D Hägele Applied Physics Letters 93 (5), 2008	41	2008
Discrete-time windows with minimal RMS bandwidth for given RMS temporal width S Starosielec, D Hägele Signal Processing 102, 240-246, 2014	37	2014
Temperature dependent low-field measurements of the magnetocaloric ΔT with sub-mK resolution in small volume and thin film samples J Döntgen, J Rudolph, T Gottschall, O Gutfleisch, S Salomon, A Ludwig, ... Applied Physics Letters 106 (3), 2015	31	2015
Dyakonov-Perel electron spin relaxation in a wurtzite semiconductor: from the nondegenerate to the highly degenerate regime JH Buß, J Rudolph, S Starosielec, A Schaefer, F Semond, Y Cordier, ... Physical Review B—Condensed Matter and Materials Physics 84 (15), 153202, 2011	30	2011
Long room-temperature electron spin lifetimes in highly doped cubic GaN JH Buß, J Rudolph, T Schupp, DJ As, K Lischka, D Hägele Applied Physics Letters 97 (6), 2010	30	2010

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