| InP HEMTs for sub-mW cryogenic low-noise amplifiers E Cha, N Wadefalk, G Moschetti, A Pourkabirian, J Stenarson, J Grahn IEEE Electron Device Letters 41 (7), 1005-1008, 2020 | 79 | 2020 |
| 0.3–14 and 16–28 GHz wide-bandwidth cryogenic MMIC low-noise amplifiers E Cha, N Wadefalk, PÅ Nilsson, J Schleeh, G Moschetti, A Pourkabirian, ... IEEE Transactions on Microwave Theory and Techniques 66 (11), 4860-4869, 2018 | 74 | 2018 |
| A 300-µW cryogenic HEMT LNA for quantum computing E Cha, N Wadefalk, G Moschetti, A Pourkabirian, J Stenarson, J Grahn 2020 IEEE/MTT-S International Microwave Symposium (IMS), 1299-1302, 2020 | 47 | 2020 |
| Two-finger InP HEMT design for stable cryogenic operation of ultra-low-noise Ka-band LNAs E Cha, G Moschetti, N Wadefalk, PÅ Nilsson, S Bevilacqua, ... 2017 IEEE MTT-S International Microwave Symposium (IMS), 168-171, 2017 | 35 | 2017 |
| Cryogenic characterization and modeling of 14 nm bulk FinFET technology A Chabane, M Prathapan, P Mueller, E Cha, PA Francese, M Kossel, ... ESSCIRC 2021-IEEE 47th European Solid State Circuits Conference (ESSCIRC), 67-70, 2021 | 21 | 2021 |
| Optimization of channel structures in InP HEMT technology for cryogenic low-noise and low-power operation E Cha, N Wadefalk, G Moschetti, A Pourkabirian, J Stenarson, J Li, ... IEEE Transactions on Electron Devices 70 (5), 2431-2436, 2023 | 17 | 2023 |
| Cryogenic W-band LNA for ALMA band 2+ 3 with average noise temperature of 24 K Y Tang, N Wadefalk, JW Kooi, J Schleeh, G Moschetti, PÅ Nilsson, ... 2017 IEEE MTT-S International Microwave Symposium (IMS), 176-179, 2017 | 17 | 2017 |
| Cryogenic LNAs for SKA band 2 to 5 J Schleeh, G Moschetti, N Wadefalk, E Cha, A Pourkabirian, G Alestig, ... 2017 IEEE MTT-S International Microwave Symposium (IMS), 164-167, 2017 | 17 | 2017 |
| III-V HEMTs for cryogenic low noise amplifiers J Grahn, E Cha, A Pourkabirian, J Stenarson, N Wadefalk 2020 IEEE International Electron Devices Meeting (IEDM), 25.6. 1-25.6. 4, 2020 | 11 | 2020 |
| InP high electron mobility transistors for cryogenic low-noise and low-power amplifiers E Cha PQDT-Global, 2020 | 8 | 2020 |
| A 300-µW Cryogenic HEMT LNA for Quantum Computing, in 2020 IEEE/MTT-S International Microwave Symposium (IMS) E Cha, N Wadefalk, G Moschetti, A Pourkabirian, J Stenarson, J Grahn Conference Proceedings, 1299-1302, 2020 | 8 | 2020 |
| Cryogenic low-noise InP HEMTs: A source-drain distance study E Cha, A Pourkabirian, J Schleeh, N Wadefalk, G Moschetti, JP Starski, ... 2016 Compound Semiconductor Week (CSW)[Includes 28th International …, 2016 | 6 | 2016 |
| Cryogenic InGaAs HEMT-based switches for quantum signal routing A Ferraris, E Cha, P Mueller, T Morf, M Prathapan, M Sousa, HC Han, ... 2022 International Electron Devices Meeting (IEDM), 4.6. 1-4.6. 4, 2022 | 5 | 2022 |
| Energy-efficient computing at cryogenic temperatures C Zota, A Ferraris, E Cha, M Prathapan, P Mueller, E Leobandung Nature Electronics, 1-9, 2024 | 3 | 2024 |
| Cryogenic InGaAs HEMTs with reduced on-resistance using strained ohmic contacts E Cha, A Ferraris, P Mueller, HC Han, D Caimi, M Sousa, C Enz, CB Zota 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 3 | 2023 |
| A system design approach toward integrated cryogenic quantum control systems M Prathapan, P Mueller, D Heim, MV Oropallo, M Brändli, PA Francese, ... 2022 IEEE 15th Workshop on Low Temperature Electronics (WOLTE), 1-4, 2022 | 3 | 2022 |
| The effect of cryogenic temperatures on the lateral heat spreading in InGaAs/InP HEMTs G Graziano, A Ferraris, E Cha, CB Zota IEEE Transactions on Electron Devices 70 (8), 4087-4092, 2023 | 2 | 2023 |
| Cryogenic quantum computer control signal generation using high-electron-mobility transistors A Ferraris, E Cha, P Mueller, K Moselund, CB Zota Communications Engineering 3 (1), 146, 2024 | 1 | 2024 |
| Semiconductor device with high-electron mobility transistor E Cha, BC Zota, KE Moselund, K Hnida-Gut US Patent App. 17/714,260, 2023 | 1 | 2023 |
| High electron mobility transistor with source and drain electrodes below the channel CB Zota, T Morf, E Cha, P Mueller US Patent 12,191,382, 2025 | | 2025 |
