| Noise in semiconductor devices F Bonani, G Ghione Noise in Semiconductor Devices, 1-213, 2001 | 214 | 2001 |
| An efficient approach to noise analysis through multidimensional physics-based models F Bonani, G Ghione, MR Pinto, RK Smith IEEE Transactions on Electron Devices 45 (1), 261-269, 1998 | 174 | 1998 |
| Analysis of stability and bifurcations of limit cycles in Chua's circuit through the harmonic-balance approach F Bonani, M Gilli IEEE Transactions on Circuits and Systems I: Fundamental Theory and …, 1999 | 125 | 1999 |
| On the application of the Kirchhoff transformation to the steady-state thermal analysis of semiconductor devices with temperature-dependent and piecewise inhomogeneous thermal … F Bonani, G Ghione Solid-State Electronics 38 (7), 1409-1412, 1995 | 114 | 1995 |
| Memcomputing NP-complete problems in polynomial time using polynomial resources and collective states FL Traversa, C Ramella, F Bonani, M Di Ventra Science advances 1 (6), e1500031, 2015 | 105 | 2015 |
| A TCAD approach to the physics-based modeling of frequency conversion and noise in semiconductor devices under large-signal forced operation F Bonani, SD Guerrieri, G Ghione, M Pirola IEEE Transactions on Electron Devices 48 (5), 966-977, 2001 | 84 | 2001 |
| Generation–recombination noise modelling in semiconductor devices through population or approximate equivalent current density fluctuations F Bonani, G Ghione Solid-State Electronics 43 (2), 285-295, 1999 | 82 | 1999 |
| A frequency‐domain approach to the analysis of stability and bifurcations in nonlinear systems described by differential‐algebraic equations FL Traversa, F Bonani, SD Guerrieri International Journal of Circuit Theory and Applications 36 (4), 421-439, 2008 | 63 | 2008 |
| Dynamic computing random access memory FL Traversa, F Bonani, YV Pershin, M Di Ventra Nanotechnology 25 (28), 285201, 2014 | 55 | 2014 |
| Physics-based simulation techniques for small-and large-signal device noise analysis in RF applications F Bonani, SD Guerrieri, G Ghione IEEE Transactions on Electron Devices 50 (3), 633-644, 2003 | 51 | 2003 |
| Noise source modeling for cyclostationary noise analysis in large-signal device operation F Bonani, SD Guerrieri, G Ghione IEEE Transactions on Electron Devices 49 (9), 1640-1647, 2002 | 51 | 2002 |
| Oscillator noise: A nonlinear perturbative theory including orbital fluctuations and phase-orbital correlation FL Traversa, F Bonani IEEE Transactions on Circuits and Systems I: Regular Papers 58 (10), 2485-2497, 2011 | 48 | 2011 |
| Improved harmonic balance implementation of Floquet analysis for nonlinear circuit simulation FL Traversa, F Bonani AEU-International journal of electronics and communications 66 (5), 357-363, 2012 | 43 | 2012 |
| Generalized Floquet Theory: Application to Dynamical Systems with Memory<? format?> and Bloch’s Theorem for Nonlocal Potentials FL Traversa, M Di Ventra, F Bonani Physical Review Letters 110 (17), 170602, 2013 | 37 | 2013 |
| A unified approach to the sensitivity and variability physics-based modeling of semiconductor devices operated in dynamic conditions—Part I: Large-signal sensitivity SD Guerrieri, F Bonani, F Bertazzi, G Ghione IEEE Transactions on Electron Devices 63 (3), 1195-1201, 2016 | 36 | 2016 |
| Transfer matrix method modelling of inhomogeneous Schottky barrier diodes on silicon carbide M Furno, F Bonani, G Ghione Solid-state electronics 51 (3), 466-474, 2007 | 33 | 2007 |
| Self-consistent coupled carrier transport full-wave EM analysis of semiconductor traveling-wave devices F Bertazzi, F Cappelluti, SD Guerrieri, F Bonani, G Ghione IEEE transactions on microwave theory and techniques 54 (4), 1611-1618, 2006 | 30 | 2006 |
| Physics-based mixed-mode reverse recovery modeling and optimization of Si PiN and MPS fast recovery diodes F Cappelluti, F Bonani, M Furno, G Ghione, R Carta, L Bellemo, ... Microelectronics journal 37 (3), 190-196, 2006 | 30 | 2006 |
| Physics-based RF noise modeling of submicron MOSFETs S Donati, MA Alam, KS Krisch, S Martin, MR Pinto, HH Vuong, F Bonani, ... International Electron Devices Meeting 1998. Technical Digest (Cat. No …, 1998 | 28 | 1998 |
| On the substrate thermal optimization in SiC-based backside-mounted high-power GaN FETs F Cappelluti, M Furno, A Angelini, F Bonani, M Pirola, G Ghione IEEE transactions on electron devices 54 (7), 1744-1752, 2007 | 27 | 2007 |
Giovanni GhioneProfessore ordinario di elettronica, Politecnico di Torinoایمیل تأیید شده در polito.it
