مقالههای دارای تعهدات انتشار عمومی - SANKALP KUMAR SINGHبیشتر بدانید
جای دیگری دردسترس نیست: ۳
Small-Signal Analysis of Channel Resistance RL at Low Gate Bias Voltages in AlGaN/GaN HEMTs
PK Kaushik, SK Singh, A Gupta, A Basu
IEEE Transactions on Electron Devices 68 (12), 6033-6038, 2021
تعهدات: Department of Science & Technology, India
An improved parasitic resistance extraction strategy alongside the effect of Cds at low gate bias voltages for AlGaN/GaN HEMTs
PK Kaushik, SK Singh, A Gupta, A Basu
Engineering Research Express 3 (1), 015009, 2021
تعهدات: Department of Science & Technology, India
An effect of source/drain spacing in AlGaN/GaN HEMT on linearity to improve device reliability
PK Kaushik, SK Singh, A Gupta, A Basu
2020 5th IEEE International Conference on Emerging Electronics (ICEE), 1-3, 2020
تعهدات: Department of Science & Technology, India
جای دیگری دردسترس است: یک
Impact of Surface States and Aluminum Mole Fraction on Surface Potential and 2DEG in AlGaN/GaN HEMTs
PKK Sankalp Kumar Singh, Ankur Gupta, Ananjan Basu, Edward Yi Chang
Nanoscale Research Letter 16 (159), 2021
تعهدات: Department of Science & Technology, India
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