| Cryptocurrencies and stock market indices. Are they related? LA Gil-Alana, EJA Abakah, MFR Rojo Research in International Business and Finance 51, 101063, 2020 | 353 | 2020 |
| Anisotropic absorption and emission of bulk AlN M Feneberg, MF Romero, M Röppischer, C Cobet, N Esser, B Neuschl, ... Physical Review B 87 (23), 235209, 2013 | 82 | 2013 |
| Simple and accurate method to estimate channel temperature and thermal resistance in AlGaN/GaN HEMTs S Martin-Horcajo, A Wang, MF Romero, MJ Tadjer, F Calle IEEE Transactions on Electron Devices 60 (12), 4105-4111, 2013 | 80 | 2013 |
| Volatility persistence in cryptocurrency markets under structural breaks EJA Abakah, LA Gil-Alana, G Madigu, F Romero-Rojo International Review of Economics & Finance 69, 680-691, 2020 | 72 | 2020 |
| Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy A Sasikumar, AR Arehart, S Martin-Horcajo, MF Romero, Y Pei, D Brown, ... Applied Physics Letters 103 (3), 033509, 2013 | 70 | 2013 |
| Effects of Plasma Pretreatment on the SiN Passivation of AlGaN/GaN HEMT MF Romero, A JimÉnezJimenez, J Miguel-SÁnchezMiguel-Sanchez, ... IEEE Electron Device Letters 29 (3), 209-211, 2008 | 57 | 2008 |
| The impact of geopolitical risk on the behavior of oil prices and freight rates M Monge, MFR Rojo, LA Gil-Alana Energy 269, 126779, 2023 | 56 | 2023 |
| Physics-based analytical model for input, output, and reverse capacitance of a GaN HEMT with the field-plate structure D Čučak, M Vasić, O García, JA Oliver, P Alou, JA Cobos, A Wang, ... IEEE Transactions on Power Electronics 32 (3), 2189-2202, 2017 | 40 | 2017 |
| Compound Semiconductor Devices-Impact of N2 Plasma Power Discharge on AlGaN/GaN HEMT Performance MF Romero, A Jímenez, F González-Posada Flores, S Martin-Horcajo, ... IEEE Transactions on Electron Devices 59 (2), 374, 2012 | 39* | 2012 |
| High-temperature microwave performance of submicron AlGaN/GaN HEMTs on SiC R Cuerdo, E Sillero, MF Romero, MJ Uren, MA di Forte Poisson, E Muñoz, ... IEEE Electron Device Letters 30 (8), 808-810, 2009 | 33 | 2009 |
| Negative spin-exchange splitting in the exciton fine structure of AlN M Feneberg, M Fátima Romero, B Neuschl, K Thonke, M Röppischer, ... Applied Physics Letters 102 (5), 052112, 2013 | 26 | 2013 |
| Impact of device geometry at different ambient temperatures on the self-heating of GaN-based HEMTs S Martin-Horcajo, A Wang, MF Romero, MJ Tadjer, AD Koehler, ... Semiconductor Science and Technology 29 (11), 115013, 2014 | 23 | 2014 |
| Effects of Gd2O3 Gate Dielectric on Proton-Irradiated AlGaN/GaN HEMTs Z Gao, MF Romero, A Redondo-Cubero, MA Pampillón, E San Andrés, ... IEEE Electron Device Letters 38 (5), 611-614, 2017 | 22 | 2017 |
| Thermal and Electrical Stability Assessment of AlGaN/GaN Metal–Oxide–Semiconductor High-Electron Mobility Transistors (MOS-HEMTs) With HfO2Gate Dielectric Z Gao, MF Romero, F Calle IEEE Transactions on Electron Devices 65 (8), 3142-3148, 2018 | 21 | 2018 |
| Trapping phenomena in AlGaN and InAlN barrier HEMTs with different geometries S Martin-Horcajo, A Wang, A Bosca, MF Romero, MJ Tadjer, AD Koehler, ... Semiconductor Science and Technology 30 (3), 035015, 2015 | 21 | 2015 |
| Thermal Assessment of AlGaN/GaN MOS-HEMTs on Si Substrate Using Gd2O3 as Gate Dielectric Z Gao, MF Romero, MÁ Pampillón, E San Andrés, F Calle IEEE Transactions on Electron Devices 63 (7), 2729-2734, 2016 | 18 | 2016 |
| Luminescence from two-dimensional electron gases in InAlN/GaN heterostructures with different In content MF Romero, M Feneberg, P Moser, C Berger, J Bläsing, A Dadgar, ... Applied Physics Letters 100 (21), 212101, 2012 | 16 | 2012 |
| Etching of AIGaN/GaN HEMT structures by Cl2-based ICP Z Gao, MF Romero, F Calle Electron Devices (CDE), 2013 Spanish Conference on, 29-32, 2013 | 9 | 2013 |
| Temperature dependent dielectric function and reflectivity spectra of nonpolar wurtzite AlN M Feneberg, MF Romero, B Neuschl, K Thonke, M Röppischer, C Cobet, ... Thin Solid Films 571, 502-505, 2014 | 8 | 2014 |
| Optical properties of magnesium doped AlxGa1−xN (0.61 ≤ x ≤ 0.73) M Feneberg, S Osterburg, MF Romero, B Garke, R Goldhahn, ... Journal of applied physics 116 (14), 143103, 2014 | 8 | 2014 |
