| Fabrication and characterization of field-plated buried-gate SiC MESFETs K Andersson, M Sudow, PA Nilsson, E Sveinbjornsson, H Hjelmgren, ... IEEE electron device letters 27 (7), 573-575, 2006 | 94 | 2006 |
| Application relevant evaluation of trapping effects in AlGaN/GaN HEMTs with Fe-doped buffer O Axelsson, S Gustafsson, H Hjelmgren, N Rorsman, H Blanck, ... IEEE Transactions on Electron Devices 63 (1), 326-332, 2015 | 82 | 2015 |
| Microwave performance of ‘buffer-free’GaN-on-SiC high electron mobility transistors DY Chen, A Malmros, M Thorsell, H Hjelmgren, O Kordina, JT Chen, ... IEEE Electron Device Letters 41 (6), 828-831, 2020 | 65 | 2020 |
| Impact of channel thickness on the large-signal performance in InAlGaN/AlN/GaN HEMTs with an AlGaN back barrier A Malmros, P Gamarra, M Thorsell, H Hjelmgren, C Lacam, SL Delage, ... IEEE Transactions on Electron Devices 66 (1), 364-371, 2018 | 55 | 2018 |
| Numerical modeling of hot electrons in n-GaAs Schottky-barrier diodes H Hjelmgren IEEE transactions on electron devices 37 (5), 1228-1234, 1990 | 55 | 1990 |
| Single barrier varactors for submillimeter wave power generation SM Nilsen, H Gronqvist, H Hjelmgren, A Rydberg, EL Kollberg IEEE transactions on microwave theory and techniques 41 (4), 572-580, 1993 | 47 | 1993 |
| An SiC MESFET-based MMIC process M Sudow, K Andersson, N Billstrom, J Grahn, H Hjelmgren, J Nilsson, ... IEEE transactions on microwave theory and techniques 54 (12), 4072-4078, 2006 | 46 | 2006 |
| Electrothermal access resistance model for GaN-based HEMTs M Thorsell, K Andersson, H Hjelmgren, N Rorsman IEEE Transactions on Electron Devices 58 (2), 466-472, 2010 | 36 | 2010 |
| Transient simulation of microwave SiC MESFETs with improved trap models H Hjelmgren, F Allerstam, K Andersson, PÅ Nilsson, N Rorsman IEEE transactions on electron devices 57 (3), 729-732, 2010 | 35 | 2010 |
| Small-signal substrate resistance effect in RF CMOS identified through device simulations H Hjelmgren, A Litwin IEEE Transactions on Electron Devices 48 (2), 397-399, 2002 | 31 | 2002 |
| Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3as Passivation for InAlN/AlN/GaN HEMTs A Malmros, P Gamarra, MA di Forte-Poisson, H Hjelmgren, C Lacam, ... IEEE Electron Device Letters 36 (3), 235-237, 2015 | 29 | 2015 |
| Electro-thermal simulations of a microwave 4H-SiC MESFET on high purity semi-insulating substrate H Hjelmgren, K Andersson, J Eriksson, PÅ Nilsson, M Südow, N Rorsman Solid-state electronics 51 (8), 1144-1152, 2007 | 25 | 2007 |
| Thermionic emission in a hydrodynamic model for heterojunction structures H Hjelmgren, TW Tang Solid-state electronics 37 (9), 1649-1657, 1994 | 25 | 1994 |
| Numerical simulations of the capacitance of forward-biased Schottky-diodes H Hjelmgren, E Kollberg, L Lundgren Solid-state electronics 34 (6), 587-590, 1991 | 25 | 1991 |
| A millimeter wave quantum well diode oscillator H Gronqvist, A Rydberg, H Hjelmgren, H Zirath, E Kollberg, J Soderstrom, ... 1988 18th European Microwave Conference, 370-375, 1988 | 24 | 1988 |
| Hydrodynamic simulations of unitraveling-carrier photodiodes SMM Rahman, H Hjelmgren, J Vukusic, J Stake, PA Andrekson, H Zirath IEEE journal of quantum electronics 43 (11), 1088-1094, 2007 | 21 | 2007 |
| Optimization of the UTC-PD epitaxy for photomixing at 340 GHz B Banik, J Vukusic, H Hjelmgren, J Stake International Journal of Infrared and Millimeter Waves 29, 914-923, 2008 | 20 | 2008 |
| Influence of field plates and surface traps on microwave silicon carbide MESFETs PÅ Nilsson, F Allerstam, M Sudow, K Andersson, H Hjelmgren, ... IEEE transactions on electron devices 55 (8), 1875-1879, 2008 | 19 | 2008 |
| Nurses’ experiences of blood sample collection from children: a qualitative study from Swedish paediatric hospital care H Hjelmgren, BM Ygge, B Nordlund, N Andersson BMC nursing 21 (1), 62, 2022 | 17 | 2022 |
| Enhanced mobility in InAlN/AlN/GaN HEMTs using a GaN interlayer A Malmros, JT Chen, H Hjelmgren, J Lu, L Hultman, O Kordina, ... IEEE Transactions on Electron Devices 66 (7), 2910-2915, 2019 | 16 | 2019 |
