مقاله‌های دارای تعهدات انتشار عمومی - Adam T. Nealبیشتر بدانید
جای دیگری دردسترس نیست: ۴
مرور
Investigation of Si incorporation in (010) β-Ga2O3 films grown by plasma-assisted MBE using diluted disilane as Si source and suboxide Ga2O precursor‏
Z Wen, X Zhai, C Lee, S Kosanovic, Y Kim, AT Neal, T Asel, S Mou, ...‏
Applied Physics Letters 124 (12), 2024‏
تعهدات: US National Science Foundation, US Department of Defense‏
مرور
Study of defects in β-Ga2O3 by isothermal capacitance transient spectroscopy‏
YY Lin, AT Neal, S Mou, JV Li‏
Journal of Vacuum Science & Technology B 37 (4), 2019‏
تعهدات: US Department of Defense‏
مرور
Low-temperature electrical properties and barrier inhomogeneities in ITO/β-Ga2O3 Schottky diode‏
S Paul, R Lopez, AT Neal, S Mou, JV Li‏
Journal of Vacuum Science & Technology B 42 (2), 2024‏
تعهدات: US Department of Energy, US Department of Defense‏
مرور
High-Temperature Electronics Using Ga203 FETs and AIGaN/GaN HEMTs‏
AE Islam, M Grupen, G Hughes, A Popp, NP Sepelak, KD Leedy, T Asel, ...‏
NAECON 2023-IEEE National Aerospace and Electronics Conference, 263-268, 2023‏
تعهدات: US Department of Defense‏
جای دیگری دردسترس است: ۲۳
مرور
Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x) 2O3/Ga2O3 heterostructures‏
Y Zhang, A Neal, Z Xia, C Joishi, JM Johnson, Y Zheng, S Bajaj, ...‏
Applied Physics Letters 112 (17), 2018‏
تعهدات: US Department of Defense‏
مرور
Donors and deep acceptors in β-Ga2O3‏
AT Neal, S Mou, S Rafique, H Zhao, E Ahmadi, JS Speck, KT Stevens, ...‏
Applied Physics Letters 113 (6), 2018‏
تعهدات: US Department of Defense‏
مرور
Ge-Doped -Ga2O3 MOSFETs‏
N Moser, J McCandless, A Crespo, K Leedy, A Green, A Neal, S Mou, ...‏
IEEE Electron Device Letters 38 (6), 775-778, 2017‏
تعهدات: US National Science Foundation, US Department of Defense‏
مرور
Lateral β-Ga2O3 field effect transistors‏
KD Chabak, KD Leedy, AJ Green, S Mou, AT Neal, T Asel, ER Heller, ...‏
Semiconductor Science and Technology 35 (1), 013002, 2019‏
تعهدات: US Department of Defense‏
مرور
MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor‏
G Seryogin, F Alema, N Valente, H Fu, E Steinbrunner, AT Neal, S Mou, ...‏
Applied Physics Letters 117 (26), 2020‏
تعهدات: US Department of Defense‏
مرور
Incomplete Ionization of a 110 meV Unintentional Donor in β-Ga2O3 and its Effect on Power Devices‏
AT Neal, S Mou, R Lopez, JV Li, DB Thomson, KD Chabak, GH Jessen‏
Scientific Reports 7, 13218, 2017‏
تعهدات: US Department of Defense‏
مرور
Towards High‐Mobility Heteroepitaxial β‐Ga2O3 on Sapphire − Dependence on The Substrate Off‐Axis Angle‏
S Rafique, L Han, AT Neal, S Mou, J Boeckl, H Zhao‏
physica status solidi (a) 215 (2), 1700467, 2018‏
تعهدات: US National Science Foundation, US Department of Defense‏
مرور
P-type conduction in two-dimensional MoS2 via oxygen incorporation‏
AT Neal, R Pachter, S Mou‏
Applied Physics Letters 110 (19), 2017‏
تعهدات: US Department of Defense‏
مرور
Pulsed Power Performance of β-Ga₂O₃ MOSFETs at L-Band‏
NA Moser, T Asel, KJ Liddy, M Lindquist, NC Miller, S Mou, A Neal, ...‏
IEEE Electron Device Letters 41 (7), 989-992, 2020‏
تعهدات: US Department of Defense‏
مرور
Silicon-doped β-Ga2O3 films grown at 1 µm/h by suboxide molecular-beam epitaxy‏
K Azizie, FVE Hensling, CA Gorsak, Y Kim, NA Pieczulewski, DM Dryden, ...‏
APL materials 11 (4), 2023‏
تعهدات: US National Science Foundation, US Department of Defense‏
مرور
Controlled Si doping of β-Ga2O3 by molecular beam epitaxy‏
JP McCandless, V Protasenko, BW Morell, E Steinbrunner, AT Neal, ...‏
Applied Physics Letters 121 (7), 2022‏
تعهدات: US National Science Foundation, US Department of Defense‏
مرور
Weak localization in few-layer black phosphorus‏
Y Du, AT Neal, H Zhou, DY Peide‏
2D Materials 3 (2), 024003, 2016‏
تعهدات: US National Science Foundation, US Department of Energy‏
مرور
Reduction of unintentional Si doping in β-Ga2O3 grown via plasma-assisted molecular beam epitaxy‏
TJ Asel, E Steinbrunner, J Hendricks, AT Neal, S Mou‏
Journal of Vacuum Science & Technology A 38 (4), 2020‏
تعهدات: US Department of Defense‏
مرور
Si doping in MOCVD grown (010) β-(AlxGa1− x) 2O3 thin films‏
AFM Bhuiyan, Z Feng, L Meng, A Fiedler, HL Huang, AT Neal, ...‏
Journal of Applied Physics 131 (14), 2022‏
تعهدات: US National Science Foundation, US Department of Defense‏
مرور
β-Ga2O3 defect study by steady-state capacitance spectroscopy‏
SS Huang, R Lopez, S Paul, AT Neal, S Mou, MP Houng, JV Li‏
Japanese Journal of Applied Physics 57 (9), 091101, 2018‏
تعهدات: US Department of Defense‏
مرور
Transport studies in 2D transition metal dichalcogenides and black phosphorus‏
Y Du, AT Neal, H Zhou, DY Peide‏
Journal of Physics: Condensed Matter 28 (26), 263002, 2016‏
تعهدات: US National Science Foundation‏
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