| Reliability of GaN high-electron-mobility transistors: State of the art and perspectives G Meneghesso, G Verzellesi, F Danesin, F Rampazzo, F Zanon, A Tazzoli, ... IEEE Transactions on Device and Materials Reliability 8 (2), 332-343, 2008 | 793 | 2008 |
| Surface-related drain current dispersion effects in AlGaN-GaN HEMTs G Meneghesso, G Verzellesi, R Pierobon, F Rampazzo, A Chini, ... IEEE Transactions on Electron Devices 51 (10), 1554-1561, 2004 | 419 | 2004 |
| Current collapse and high-electric-field reliability of unpassivated GaN/AlGaN/GaN HEMTs G Meneghesso, F Rampazzo, P Kordos, G Verzellesi, E Zanoni IEEE Transactions on Electron Devices 53 (12), 2932-2941, 2006 | 229 | 2006 |
| Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot-electron stress A Sozza, C Dua, E Morvan, S Delage, F Rampazzo, A Tazzoli, F Danesin, ... IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest., 4 …, 2005 | 117 | 2005 |
| Reliability and failure analysis in power GaN-HEMTs: An overview M Meneghini, I Rossetto, C De Santi, F Rampazzo, A Tajalli, A Barbato, ... 2017 IEEE International Reliability Physics Symposium (IRPS), 3B-2.1-3B-2.8, 2017 | 115 | 2017 |
| Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress G Meneghesso, M Meneghini, A Stocco, D Bisi, C de Santi, I Rossetto, ... Microelectronic engineering 109, 257-261, 2013 | 74 | 2013 |
| Degradation mechanisms of GaN-based LEDs after accelerated DC current aging G Meneghesso, S Levada, R Pierobon, F Rampazzo, E Zanoni, ... Digest. International Electron Devices Meeting,, 103-106, 2002 | 67 | 2002 |
| A review of failure modes and mechanisms of GaN-based HEMTs E Zanoni, G Meneghesso, G Verzellesi, F Danesin, M Meneghini, ... 2007 IEEE International Electron Devices Meeting, 381-384, 2007 | 61 | 2007 |
| Characterization and analysis of trap-related effects in AlGaN–GaN HEMTs M Faqir, G Verzellesi, F Fantini, F Danesin, F Rampazzo, G Meneghesso, ... Microelectronics reliability 47 (9-11), 1639-1642, 2007 | 44 | 2007 |
| Demonstration of field-and power-dependent ESD failure in AlGaN/GaN RF HEMTs I Rossetto, M Meneghini, M Barbato, F Rampazzo, D Marcon, ... IEEE Transactions on Electron Devices 62 (9), 2830-2836, 2015 | 38 | 2015 |
| Influence of gate-leakage current on drain current collapse of unpassivated GaN∕ AlGaN∕ GaN high electron mobility transistors P Kordoš, J Bernát, M Marso, H Lüth, F Rampazzo, G Tamiazzo, ... Applied Physics Letters 86 (25), 2005 | 37 | 2005 |
| High-voltage double-pulsed measurement system for GaN-based power HEMTs D Bisi, A Stocco, M Meneghini, F Rampazzo, A Cester, G Meneghesso, ... 2014 IEEE International Reliability Physics Symposium, CD. 11.1-CD. 11.4, 2014 | 36 | 2014 |
| Hot-electron-stress degradation in unpassivated GaN/AlGaN/GaN HEMTs on SiC G Meneghesso, R Pierobon, F Rampazzo, G Tamiazzo, E Zanoni, ... 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings …, 2005 | 35 | 2005 |
| Experimental/numerical investigation on current collapse in AlGaN/GaN HEMT's G Verzellesi, R Pierobon, F Rampazzo, G Meneghesso, A Chini, ... Digest. International Electron Devices Meeting,, 689-692, 2002 | 33 | 2002 |
| Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry M Meneghini, I Rossetto, M Borga, E Canato, C De Santi, F Rampazzo, ... 2017 IEEE International Reliability Physics Symposium (IRPS), 4B-5.1-4B-5.5, 2017 | 31 | 2017 |
| Proton induced trapping effect on space compatible GaN HEMTs A Stocco, S Gerardin, D Bisi, S Dalcanale, F Rampazzo, M Meneghini, ... Microelectronics Reliability 54 (9-10), 2213-2216, 2014 | 29 | 2014 |
| Single-and double-heterostructure GaN-HEMTs devices for power switching applications A Zanandrea, E Bahat-Treidel, F Rampazzo, A Stocco, M Meneghini, ... Microelectronics Reliability 52 (9-10), 2426-2430, 2012 | 23 | 2012 |
| Radiation performance of new semiconductor power devices for the LHC experiment upgrades C Abbate, M Alderighi, S Baccaro, G Busatto, M Citterio, P Cova, ... POS PROCEEDINGS OF SCIENCE, 1-7, 2013 | 22 | 2013 |
| Electrical and electroluminescence characteristics of AlGaN/GaN high electron mobility transistors operated in sustainable breakdown conditions M Meneghini, A Zanandrea, F Rampazzo, A Stocco, M Bertin, G Cibin, ... Japanese Journal of Applied Physics 52 (8S), 08JN17, 2013 | 21 | 2013 |
| Developments on DC/DC converters for the LHC experiment upgrades C Abbate, M Alderighi, S Baccaro, G Busatto, M Citterio, P Cova, ... Journal of Instrumentation 9 (02), C02017, 2014 | 20 | 2014 |
Gaudenzio MeneghessoUniversity of Padova, Dept. of Information Engineeringایمیل تأیید شده در dei.unipd.it