| Room temperature electroluminescence from dislocation‐rich silicon EÖ Sveinbjörnsson, J Weber Applied physics letters 69 (18), 2686-2688, 1996 | 153 | 1996 |
| Interfaces between 4H-SiC and SiO2: Microstructure, nanochemistry, and near-interface traps E Pippel, J Woltersdorf, HÖ Ólafsson, EÖ Sveinbjörnsson Journal of applied physics 97 (3), 2005 | 147 | 2005 |
| Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C (V) characterization of metal-insulator-semiconductor … M Fagerlind, F Allerstam, EÖ Sveinbjörnsson, N Rorsman, ... Journal of Applied Physics 108 (1), 2010 | 113 | 2010 |
| Interface trap properties of thermally oxidized n-type 4H–SiC and 6H–SiC TE Rudenko, IN Osiyuk, IP Tyagulski, HÖ Ólafsson, EÖ Sveinbjörnsson Solid-state electronics 49 (4), 545-553, 2005 | 110 | 2005 |
| Electrical properties of platinum-hydrogen complexes in silicon JU Sachse, EÖ Sveinbjörnsson, W Jost, J Weber, H Lemke Physical Review B 55 (24), 16176, 1997 | 102 | 1997 |
| A strong reduction in the density of near-interface traps at the SiO2∕ 4H‐SiC interface by sodium enhanced oxidation F Allerstam, HÖ Ólafsson, G Gudjonsson, D Dochev, EÖ Sveinbjörnsson, ... Journal of Applied Physics 101 (12), 2007 | 94 | 2007 |
| Fabrication and characterization of field-plated buried-gate SiC MESFETs K Andersson, M Sudow, PA Nilsson, E Sveinbjornsson, H Hjelmgren, ... IEEE electron device letters 27 (7), 573-575, 2006 | 94 | 2006 |
| Electron trapping in extended defects in microwave AlGaN/GaN HEMTs with carbon-doped buffers J Bergsten, M Thorsell, D Adolph, JT Chen, O Kordina, ... IEEE Transactions on Electron Devices 65 (6), 2446-2453, 2018 | 79 | 2018 |
| Reaction kinetics of hydrogen-gold complexes in silicon EÖ Sveinbjörnsson, O Engström Physical Review B 52 (7), 4884, 1995 | 79 | 1995 |
| High field-effect mobility in n-channel Si face 4H-SiC MOSFETs with gate oxide grown on aluminum ion-implanted material G Gudjonsson, HO Olafsson, F Allerstam, PA Nilsson, EO Sveinbjornsson, ... IEEE electron device letters 26 (2), 96-98, 2005 | 76 | 2005 |
| 1200-V 5.2-4H-SiC BJTs With a High Common-Emitter Current Gain HS Lee, M Domeij, CM Zetterling, M Ostling, F Allerstam, ... IEEE Electron Device Letters 28 (11), 1007-1009, 2007 | 75 | 2007 |
| Trap and inversion layer mobility characterization using Hall effect in silicon carbide-based MOSFETs with gate oxides grown by sodium enhanced oxidation V Tilak, K Matocha, G Dunne, F Allerstam, EÖ Sveinbjornsson IEEE Transactions on Electron Devices 56 (2), 162-169, 2009 | 72 | 2009 |
| Hydrogen-atom number in platinum-hydrogen complexes in silicon JU Sachse, J Weber, EÖ Sveinbjörnsson Physical Review B 60 (3), 1474, 1999 | 62 | 1999 |
| Thermal emission of electrons from selected s-shell configurations in InAs/GaAs quantum dots O Engström, M Malmkvist, Y Fu, HÖ Ólafsson, EÖ Sveinbjörnsson Applied physics letters 83 (17), 3578-3580, 2003 | 60 | 2003 |
| Similarities in the electrical properties of transition metal–hydrogen complexes in silicon JU Sachse, EÖ Sveinbjörnsson, N Yarykin, J Weber Materials Science and Engineering: B 58 (1-2), 134-140, 1999 | 60 | 1999 |
| Electrical characterization of amorphous Al2O3 dielectric films on n-type 4H-SiC RY Khosa, EB Thorsteinsson, M Winters, N Rorsman, R Karhu, J Hassan, ... Aip Advances 8 (2), 2018 | 56 | 2018 |
| High field effect mobility in Si face 4H-SiC MOSFET transistors HO Ólafsson, G Gudjonsson, PA Nilsson, EO Sveinbjörnsson, H Zirath, ... Electronics Letters 40 (8), 508-510, 2004 | 46 | 2004 |
| Phosphorus diffusion gettering of gold in silicon: The reversibility of the gettering process EÖ Sveinbjörnsson, O Engström, U Södervall Journal of applied physics 73 (11), 7311-7321, 1993 | 45 | 1993 |
| Novel hydrogen‐gold‐related deep acceptor in n‐type silicon EÖ Sveinbjörnsson, O Engström Applied physics letters 61 (19), 2323-2325, 1992 | 45 | 1992 |
| Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems M Dammann, W Pletschen, P Waltereit, W Bronner, R Quay, S Muller, ... 2008 ROCS Workshop [Reliability of Compound Semiconductors Workshop], 25-44, 2008 | 42 | 2008 |
