| Correlation between dislocations and leakage current of pn diodes on a free-standing GaN substrate S Usami, Y Ando, A Tanaka, K Nagamatsu, M Deki, M Kushimoto, S Nitta, ... Applied Physics Letters 112 (18), 2018 | 198 | 2018 |
| Continuous wave operation of GaN vertical cavity surface emitting lasers at room temperature T Onishi, O Imafuji, K Nagamatsu, M Kawaguchi, K Yamanaka, ... IEEE Journal of Quantum Electronics 48 (9), 1107-1112, 2012 | 143 | 2012 |
| Quantitative evaluation of SARS-CoV-2 inactivation using a deep ultraviolet light-emitting diode T Minamikawa, T Koma, A Suzuki, T Mizuno, K Nagamatsu, H Arimochi, ... Scientific Reports 11 (1), 5070, 2021 | 89 | 2021 |
| High-efficiency AlGaN-based UV light-emitting diode on laterally overgrown AlN K Nagamatsu, N Okada, H Sugimura, H Tsuzuki, F Mori, K Iida, A Bando, ... Journal of Crystal Growth 310 (7-9), 2326-2329, 2008 | 82 | 2008 |
| Growth of hexagonal boron nitride on sapphire substrate by pulsed-mode metalorganic vapor phase epitaxy X Yang, S Nitta, K Nagamatsu, SY Bae, HJ Lee, Y Liu, M Pristovsek, ... Journal of Crystal Growth 482, 1-8, 2018 | 67 | 2018 |
| Low-leakage-current enhancement-mode AlGaN/GaN heterostructure field-effect transistor using p-type gate contact N Tsuyukuchi, K Nagamatsu, Y Hirose, M Iwaya, S Kamiyama, H Amano, ... Japanese Journal of Applied Physics 45 (3L), L319, 2006 | 49 | 2006 |
| Effect of c‐plane sapphire misorientation on the growth of AlN by high‐temperature MOVPE K Nagamatsu, N Okada, N Kato, T Sumii, A Bandoh, M Iwaya, ... physica status solidi c 5 (9), 3048-3050, 2008 | 30 | 2008 |
| Low interface state densities at Al2O3/GaN interfaces formed on vicinal polar and non-polar surfaces Y Ando, K Nagamatsu, M Deki, N Taoka, A Tanaka, S Nitta, Y Honda, ... Applied Physics Letters 117 (10), 2020 | 28 | 2020 |
| Crystal growth and p‐type conductivity control of AlGaN for high‐efficiency nitride‐based UV emitters T Mori, K Nagamatsu, K Nonaka, K Takeda, M Iwaya, S Kamiyama, ... physica status solidi c 6 (12), 2621-2625, 2009 | 28 | 2009 |
| Effect of dislocations on the growth of p‐type GaN and on the characteristics of p–n diodes S Usami, R Miyagoshi, A Tanaka, K Nagamatsu, M Kushimoto, M Deki, ... physica status solidi (a) 214 (8), 1600837, 2017 | 26 | 2017 |
| Decomposition of trimethylgallium and adduct formation in a metalorganic vapor phase epitaxy reactor analyzed by high‐resolution gas monitoring system K Nagamatsu, S Nitta, Z Ye, H Nagao, S Miki, Y Honda, H Amano physica status solidi (b) 254 (8), 1600737, 2017 | 25 | 2017 |
| Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE K Nagamatsu, Y Ando, T Kono, H Cheong, S Nitta, Y Honda, M Pristovsek, ... Journal of Crystal Growth 512, 78-83, 2019 | 24 | 2019 |
| m‐Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off‐Angle m‐Plane GaN Substrates A Tanaka, Y Ando, K Nagamatsu, M Deki, H Cheong, B Ousmane, ... physica status solidi (a) 215 (9), 1700645, 2018 | 23 | 2018 |
| Activation energy of Mg in Al0.25Ga0.75N and Al0.5Ga0.5N K Nagamatsu, K Takeda, M Iwaya, S Kamiyama, H Amano, I Akasaki physica status solidi c 6 (S2 2), S437-S439, 2009 | 23 | 2009 |
| Fabrication of AlN templates on SiC substrates by sputtering-deposition and high-temperature annealing K Uesugi, Y Hayashi, K Shojiki, S Xiao, K Nagamatsu, H Yoshida, ... Journal of Crystal Growth 510, 13-17, 2019 | 22 | 2019 |
| Electrical properties of GaN metal-insulator-semiconductor field-effect transistors with Al2O3/GaN interfaces formed on vicinal Ga-polar and nonpolar surfaces Y Ando, K Nagamatsu, M Deki, N Taoka, A Tanaka, S Nitta, Y Honda, ... Applied Physics Letters 117 (24), 2020 | 21 | 2020 |
| Inactivation of SARS-CoV-2 by deep ultraviolet light emitting diode: A review T Minamikawa, T Koma, A Suzuki, K Nagamatsu, T Yasui, K Yasutomo, ... Japanese Journal of Applied Physics 60 (9), 090501, 2021 | 19 | 2021 |
| Ammonia decomposition and reaction by high-resolution mass spectrometry for group III–nitride epitaxial growth Z Ye, S Nitta, K Nagamatsu, N Fujimoto, M Kushimoto, M Deki, A Tanaka, ... Journal of Crystal Growth 516, 63-66, 2019 | 17 | 2019 |
| Relaxation and recovery processes of AlxGa1− xN grown on AlN underlying layer T Asai, K Nagata, T Mori, K Nagamatsu, M Iwaya, S Kamiyama, H Amano, ... Journal of crystal growth 311 (10), 2850-2852, 2009 | 15 | 2009 |
| Growth and conductivity control of high quality AlGaN and its application to high-performance ultraviolet laser diodes K Nagamatsu, K Takeda, T Mori, H Tsuzuki, M Iwaya, S Kamiyama, ... Gallium Nitride Materials and Devices IV 7216, 237-248, 2009 | 15 | 2009 |
Hiroshi AMANO (天野 浩)Nagoya University (名古屋大学)ایمیل تأیید شده در nuee.nagoya-u.ac.jp