مقاله‌های دارای تعهدات انتشار عمومی - Athith Krishnaبیشتر بدانید
جای دیگری دردسترس نیست: ۶
W-band power performance of SiN-passivated N-polar GaN deep recess HEMTs
B Romanczyk, X Zheng, M Guidry, H Li, N Hatui, C Wurm, A Krishna, ...
IEEE Electron Device Letters 41 (3), 349-352, 2020
تعهدات: US Department of Defense
High linearity and high gain performance of N-polar GaN MIS-HEMT at 30 GHz
P Shrestha, M Guidry, B Romanczyk, N Hatui, C Wurm, A Krishna, ...
IEEE Electron Device Letters 41 (5), 681-684, 2020
تعهدات: US Department of Defense
Demonstration of a GaN/AlGaN superlattice-based p-channel FinFET with high ON-current
A Raj, A Krishna, N Hatui, C Gupta, R Jang, S Keller, UK Mishra
IEEE Electron Device Letters 41 (2), 220-223, 2020
تعهدات: US Department of Defense
N-polar GaN-on-Sapphire deep recess HEMTs with high W-band power density
B Romanczyk, W Li, M Guidry, N Hatui, A Krishna, C Wurm, S Keller, ...
IEEE Electron Device Letters 41 (11), 1633-1636, 2020
تعهدات: US Department of Defense
GaN/AlGaN superlattice based E-mode p-channel MES-FinFET with regrown contacts and> 50 mA/mm on-current
A Raj, A Krishna, N Hatui, B Romanczyk, C Wurm, M Guidry, R Hamwey, ...
2021 IEEE International Electron Devices Meeting (IEDM), 5.4. 1-5.4. 4, 2021
تعهدات: US Department of Defense
GaN/AlGaN superlattice based E-mode hole channel FinFET with Schottky gate
A Raj, A Krishna, B Romanczyk, N Hatui, W Liu, S Keller, UK Mishra
IEEE Electron Device Letters 44 (1), 9-12, 2022
تعهدات: US Department of Defense
جای دیگری دردسترس است: ۱۱
AlGaN/GaN Superlattice‐Based p‐Type Field‐Effect Transistor with Tetramethylammonium Hydroxide Treatment
A Krishna, A Raj, N Hatui, O Koksaldi, R Jang, S Keller, UK Mishra
physica status solidi (a) 217 (7), 1900692, 2020
تعهدات: US Department of Defense
Investigation of nitrogen polar p-type doped GaN/AlxGa (1-x) N superlattices for applications in wide-bandgap p-type field effect transistors
A Krishna, A Raj, N Hatui, S Keller, U Mishra
Appl. Phys. Lett. 115 (172105), 2019
تعهدات: US Department of Defense
Strong confinement of optical fields using localized surface phonon polaritons in cubic boron nitride
I Chatzakis, A Krishna, J Culbertson, N Sharac, AJ Giles, MG Spencer, ...
Optics letters 43 (9), 2177-2180, 2018
تعهدات: US National Science Foundation, US Department of Defense, Natural Sciences …
Ultra-high silicon doped N-polar GaN contact layers grown by metal-organic chemical vapor deposition
N Hatui, A Krishna, H Li, C Gupta, B Romanczyk, D Acker-James, ...
Semiconductor Science and Technology 35 (9), 095002, 2020
تعهدات: US Department of Defense
Characterization of AlSiO dielectrics with varying silicon composition for N-polar GaN-based devices
I Sayed, W Liu, J Georgieva, A Krishna, S Keller, UK Mishra
Semiconductor Science and Technology 35 (9), 095027, 2020
تعهدات: US Department of Defense
Proposed existence of acceptor-like traps at positive polarization interfaces in p-type III-nitride semiconductors
A Krishna, A Raj, N Hatui, I Sayed, S Keller, UK Mishra
Applied Physics Letters 117 (4), 2020
تعهدات: US Department of Defense
Acceptor traps as the source of holes in p-type N-polar GaN/(AlN/AlGaN) superlattices
A Krishna, A Raj, N Hatui, S Keller, S Denbaars, UK Mishra
Applied Physics Letters 120 (13), 2022
تعهدات: US Department of Defense
HfO2 as gate insulator on N-polar GaN–AlGaN heterostructures
CJ Clymore, S Mohanty, ZA Jian, A Krishna, S Keller, E Ahmadi
Semiconductor Science and Technology 36 (3), 035017, 2021
تعهدات: US Department of Defense
Metal organic vapor phase epitaxy of thick N-polar InGaN films
N Hatui, A Krishna, SS Pasayat, S Keller, UK Mishra
Electronics 10 (10), 1182, 2021
تعهدات: US Department of Defense
Demonstration of acceptor-like traps at positive polarization interfaces in Ga-polar p-type (AlGaN/AlN)/GaN superlattices
A Krishna, A Raj, N Hatui, S Keller, U Mishra
2022 Compound Semiconductor Week (CSW), 10.1109/CSW55288.2022.9930379, 2022
تعهدات: US Department of Defense
Demonstration of Acceptor-Like Traps at Positive Polarization Interfaces in Ga-Polar P-type (AlGaN/AlN)/GaN Superlattices. Crystals 2022, 12, 784
A Krishna, A Raj, N Hatui, S Keller, UK Mishra
s Note: MDPI stays neutral with regard to jurisdictional claims in published …, 2022
تعهدات: US Department of Defense
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