| W-band power performance of SiN-passivated N-polar GaN deep recess HEMTs B Romanczyk, X Zheng, M Guidry, H Li, N Hatui, C Wurm, A Krishna, ... IEEE Electron Device Letters 41 (3), 349-352, 2020 | 114 | 2020 |
| High linearity and high gain performance of N-polar GaN MIS-HEMT at 30 GHz P Shrestha, M Guidry, B Romanczyk, N Hatui, C Wurm, A Krishna, ... IEEE Electron Device Letters 41 (5), 681-684, 2020 | 79 | 2020 |
| Intrusion detection in intelligent transportation system and its applications using blockchain technology AM Krishna, AK Tyagi 2020 international conference on emerging trends in information technology …, 2020 | 56 | 2020 |
| Demonstration of a GaN/AlGaN superlattice-based p-channel FinFET with high ON-current A Raj, A Krishna, N Hatui, C Gupta, R Jang, S Keller, UK Mishra IEEE Electron Device Letters 41 (2), 220-223, 2020 | 53 | 2020 |
| N-polar GaN-on-Sapphire deep recess HEMTs with high W-band power density B Romanczyk, W Li, M Guidry, N Hatui, A Krishna, C Wurm, S Keller, ... IEEE Electron Device Letters 41 (11), 1633-1636, 2020 | 46 | 2020 |
| AlGaN/GaN Superlattice‐Based p‐Type Field‐Effect Transistor with Tetramethylammonium Hydroxide Treatment A Krishna, A Raj, N Hatui, O Koksaldi, R Jang, S Keller, UK Mishra physica status solidi (a) 217 (7), 1900692, 2020 | 35 | 2020 |
| Investigation of nitrogen polar p-type doped GaN/AlxGa (1-x) N superlattices for applications in wide-bandgap p-type field effect transistors A Krishna, A Raj, N Hatui, S Keller, U Mishra Appl. Phys. Lett. 115 (172105), 2019 | 32 | 2019 |
| Strong confinement of optical fields using localized surface phonon polaritons in cubic boron nitride I Chatzakis, A Krishna, J Culbertson, N Sharac, AJ Giles, MG Spencer, ... Optics letters 43 (9), 2177-2180, 2018 | 23 | 2018 |
| GaN/AlGaN superlattice based E-mode p-channel MES-FinFET with regrown contacts and> 50 mA/mm on-current A Raj, A Krishna, N Hatui, B Romanczyk, C Wurm, M Guidry, R Hamwey, ... 2021 IEEE International Electron Devices Meeting (IEDM), 5.4. 1-5.4. 4, 2021 | 20 | 2021 |
| Ultra-high silicon doped N-polar GaN contact layers grown by metal-organic chemical vapor deposition N Hatui, A Krishna, H Li, C Gupta, B Romanczyk, D Acker-James, ... Semiconductor Science and Technology 35 (9), 095002, 2020 | 17 | 2020 |
| Characterization of AlSiO dielectrics with varying silicon composition for N-polar GaN-based devices I Sayed, W Liu, J Georgieva, A Krishna, S Keller, UK Mishra Semiconductor Science and Technology 35 (9), 095027, 2020 | 15 | 2020 |
| Proposed existence of acceptor-like traps at positive polarization interfaces in p-type III-nitride semiconductors A Krishna, A Raj, N Hatui, I Sayed, S Keller, UK Mishra Applied Physics Letters 117 (4), 2020 | 15 | 2020 |
| Preserving privacy in future vehicles of tomorrow AM Krishna, AK Tyagi, S Prasad JCR 7 (19), 6675-6684, 2020 | 12 | 2020 |
| Trust and reputation mechanisms in vehicular ad-hoc networks: A systematic review AK Tyagi, AM Krishna, S Malik, MM Nair, S Niladhuri Advances in Science, Technology and Engineering Systems Journal 5 (1), 387-402, 2020 | 11 | 2020 |
| GaN/AlGaN superlattice based E-mode hole channel FinFET with Schottky gate A Raj, A Krishna, B Romanczyk, N Hatui, W Liu, S Keller, UK Mishra IEEE Electron Device Letters 44 (1), 9-12, 2022 | 10 | 2022 |
| Acceptor traps as the source of holes in p-type N-polar GaN/(AlN/AlGaN) superlattices A Krishna, A Raj, N Hatui, S Keller, S Denbaars, UK Mishra Applied Physics Letters 120 (13), 2022 | 10 | 2022 |
| HfO2 as gate insulator on N-polar GaN–AlGaN heterostructures CJ Clymore, S Mohanty, ZA Jian, A Krishna, S Keller, E Ahmadi Semiconductor Science and Technology 36 (3), 035017, 2021 | 10 | 2021 |
| A novel concept using derivative superposition at the device-level to reduce linearity sensitivity to bias in N-polar GaN MISHEMT P Shrestha, M Guidry, B Romanczyk, RR Karnaty, N Hatui, C Wurm, ... 2020 Device Research Conference (DRC), 1-2, 2020 | 10 | 2020 |
| Screening of chilli cultivars/lines against leaf curl and anthracnose. PL Bhalla, BS Baghel, A Krishna | 9 | 1983 |
| Metal organic vapor phase epitaxy of thick N-polar InGaN films N Hatui, A Krishna, SS Pasayat, S Keller, UK Mishra Electronics 10 (10), 1182, 2021 | 5 | 2021 |
Stacia KellerUniversity of California Santa Barbaraایمیل تأیید شده در ece.ucsb.edu