دنبال کردن
Ilesanmi Adesida
Ilesanmi Adesida
Nazarbayev University and University of Illinois
ایمیل تأیید شده در nu.edu.kz
عنوان
نقل شده توسط
نقل شده توسط
سال
Transfer printing by kinetic control of adhesion to an elastomeric stamp‏
MA Meitl, ZT Zhu, V Kumar, KJ Lee, X Feng, YY Huang, I Adesida, ...‏
Nature materials 5 (1), 33-38, 2006‏
19902006
Recessed-gate enhancement-mode GaN HEMT with high threshold voltage‏
WB Lanford, T Tanaka, Y Otoki, I Adesida‏
Electronics Letters 41 (7), 449-450, 2005‏
3892005
Gallium nitride whiskers formed by selective photoenhanced wet etching of dislocations‏
C Youtsey, LT Romano, I Adesida‏
Applied physics letters 73 (6), 797-799, 1998‏
3321998
AlGaN/GaN HEMTs on SiC with fT of over 120 GHz‏
V Kumar, W Lu, R Schwindt, A Kuliev, G Simin, J Yang, MA Khan, ...‏
IEEE Electron Device Letters 23 (8), 455-457, 2002‏
3272002
AlGaN/GaN HEMTs on SiC with over 100 GHz f/sub T/and low microwave noise‏
W Lu, J Yang, MA Khan, I Adesida‏
IEEE Transactions on Electron Devices 48 (3), 581-585, 2001‏
3082001
Highly anisotropic photoenhanced wet etching of -type GaN‏
C Youtsey, I Adesida, G Bulman‏
Applied physics letters 71 (15), 2151-2153, 1997‏
2971997
Reactive ion etching of gallium nitride in silicon tetrachloride plasmasa)‏
I Adesida, A Mahajan, E Andideh, MA Khan, DT Olsen, JN Kuznia‏
Applied physics letters 63 (20), 2777-2779, 1993‏
2821993
Schottky barrier properties of various metals on n-type GaN‏
AC Schmitz, AT Ping, MA Khan, Q Chen, JW Yang, I Adesida‏
Semiconductor Science and Technology 11 (10), 1464, 1996‏
2671996
Metal contacts to n-type GaN‏
AC Schmitz, AT Ping, MA Khan, Q Chen, JW Yang, I Adesida‏
Journal of Electronic Materials 27, 255-260, 1998‏
2641998
Smooth -type GaN surfaces by photoenhanced wet etching‏
C Youtsey, I Adesida, LT Romano, G Bulman‏
Applied Physics Letters 72 (5), 560-562, 1998‏
2191998
High rate etching of SiC using inductively coupled plasma reactive ion etching in -based gas mixtures‏
FA Khan, I Adesida‏
Applied physics letters 75 (15), 2268-2270, 1999‏
2111999
A comparative study of surface passivation on AlGaN/GaN HEMTs‏
W Lu, V Kumar, R Schwindt, E Piner, I Adesida‏
Solid-State Electronics 46 (9), 1441-1444, 2002‏
1962002
Buckled and wavy ribbons of GaAs for high‐performance electronics on elastomeric substrates‏
Y Sun, V Kumar, I Adesida, JA Rogers‏
Advanced Materials 18 (21), 2857-2862, 2006‏
1952006
Thermally-stable low-resistance Ti/Al/Mo/Au multilayer ohmic contacts on ‏
V Kumar, L Zhou, D Selvanathan, I Adesida‏
Journal of applied physics 92 (3), 1712-1714, 2002‏
1842002
Rapid evaluation of dislocation densities in n-type GaN films using photoenhanced wet etching‏
C Youtsey, LT Romano, RJ Molnar, I Adesida‏
Applied physics letters 74 (23), 3537-3539, 1999‏
1821999
DC and microwave performance of high-current AlGaN/GaN heterostructure field effect transistors grown on p-type SiC substrates‏
AT Ping, Q Chen, JW Yang, MA Khan, I Adesida‏
IEEE Electron Device Letters 19 (2), 54-56, 1998‏
1751998
The effects of reactive ion etching-induced damage on the characteristics of ohmic contacts to n-type GaN‏
AT Ping, Q Chen, JW Yang, MA Khan, I Adesida‏
Journal of Electronic Materials 27, 261-265, 1998‏
1561998
Formation of low resistance nonalloyed Al/Pt ohmic contacts on n-type ZnO epitaxial layer‏
HK Kim, KK Kim, SJ Park, TY Seong, I Adesida‏
Journal of applied physics 94 (6), 4225-4227, 2003‏
1522003
Radiolysis and resolution limits of inorganic halide resists‏
A Muray, M Scheinfein, M Isaacson, I Adesida‏
Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1985‏
1511985
In-plane bandgap control in porous GaN through electroless wet chemical etching‏
X Li, YW Kim, PW Bohn, I Adesida‏
Applied Physics Letters 80 (6), 980-982, 2002‏
1482002
سیستم در حال حاضر قادر به انجام عملکرد نیست. بعداً دوباره امتحان کنید.
مقاله‌ها 1–20