| Full three-dimensional quantum transport simulation of atomistic interface roughness in silicon nanowire FETs SG Kim, M Luisier, A Paul, TB Boykin, G Klimeck IEEE Transactions on Electron Devices 58 (5), 1371-1380, 2011 | 77 | 2011 |
| Engineering Nanowire n-MOSFETs at Lg<8 nm SR Mehrotra, SG Kim, T Kubis, M Povolotskyi, MS Lundstrom, G Klimeck Electron Devices, IEEE Transactions on 60 (7), 2171-2177, 2013 | 59* | 2013 |
| Room-temperature graphene-nanoribbon tunneling field-effect transistors WS Hwang, P Zhao, SG Kim, R Yan, G Klimeck, A Seabaugh, ... npj 2D Materials and Applications 3 (1), 43, 2019 | 34 | 2019 |
| On the bandstructure velocity and ballistic current of ultra-narrow silicon nanowire transistors as a function of cross section size, orientation, and bias N Neophytou, SG Kim, G Klimeck, H Kosina Journal of Applied Physics 107 (11), 2010 | 34 | 2010 |
| Nemo5, a parallel, multiscale, multiphysics nanoelectronics modeling tool J Sellier, J Fonseca, TC Kubis, M Povolotskyi, Y He, H Ilatikhameneh, ... Proc. SISPAD, 1-4, 2012 | 23 | 2012 |
| Transistor roadmap projection using predictive full-band atomistic modeling M Salmani-Jelodar, S Kim, K Ng, G Klimeck Applied Physics Letters 105 (8), 2014 | 20 | 2014 |
| More Moore landscape for system readiness-ITRS2. 0 requirements M Badaroglu, K Ng, M Salmani, SG Kim, G Klimeck, CP Chang, C Cheung, ... 2014 IEEE 32nd International Conference on Computer Design (ICCD), 147-152, 2014 | 11 | 2014 |
| Resonant tunneling diode simulation with NEGF HH Park, Z Jiang, AG Akkala, S Steiger, M Povolotskyi, TC Kubis, ... Retrieved on January 12, 2021, 2008 | 10 | 2008 |
| Computational study of heterojunction graphene nanoribbon tunneling transistors with pd orbital tight-binding method SG Kim, M Luisier, TB Boykin, G Klimeck Applied Physics Letters 104 (24), 2014 | 9 | 2014 |
| MuGFET SG Kim, G Klimeck, S Damodaran, BP Haley DOI10.4231/D3HM52K86, 2011 | 9 | 2011 |
| MOSFet S Ahmed, S Mehrotra, S Kim, M Mannino, G Klimeck, D Vasileska, ... Режим доступу до ресурсу: https://nanohub. org/resources/mosfet, 2017 | 8 | 2017 |
| Effects of interface roughness scattering on radio frequency performance of silicon nanowire transistors SG Kim, M Luisier, TB Boykin, G Klimeck Applied Physics Letters 99 (23), 2011 | 7 | 2011 |
| OMEN Nanowire SG Kim, M Luisier, BP Haley, A Paul, SR Mehrotra, G Klimeck https://nanohub.org/resources/omenwire 10254, 2008 | 7 | 2008 |
| Performance Degradation due to Thick Physical Layer of High-k Oxide in Ultra- scaled MOSFETs and Mitigation through Electrostatics Design M Salmani-Jelodar, S Kim, K Ng, G Klimeck IEEE Silicon Nanoelectronics Workshop, 2014 | 5 | 2014 |
| On the Scaling Issues and Possible Solutions for Double Gate MOSFETs at the End of ITRS MS Jelodar, SG Kim, K Ng, G Klimeck TECHCON, 2013 | 3* | 2013 |
| Quantum corrected drift-diffusion simulation for prediction of CMOS scaling SG Kim, M Salmani-Jelodar, K Ng, G Klimeck 71st Device Research Conference, 119-120, 2013 | 1 | 2013 |
| Effects of interface roughness scattering on RF performance of nanowire transistors S Kim, SR Mehrotra, M Luisier, TB Boykin, G Klimeck 2011 International Semiconductor Device Research Symposium (ISDRS), 1-2, 2011 | 1 | 2011 |
| ELECTRON SCATTERING IN QUASI-ONE-DIMENSIONAL NANOSCALE TRANSISTORS SG Kim Purdue University, 2014 | | 2014 |
| ELECTRON SCATTERING SG Kim Purdue University West Lafayette, 2013 | | 2013 |
| Atomistic Simulation of Graphene Transistors SG Kim, G Klimeck, J Geng, JE Fonseca, M Luisier, T Boykin Materials Structures and Devices (MSD) Review, 2012 | | 2012 |
Gerhard KlimeckProfessor of Electrical and Computer Engineering, Purdue Universityایمیل تأیید شده در purdue.edu