| Demonstration of constant 8 W/mm power density at 10, 30, and 94 GHz in state-of-the-art millimeter-wave N-polar GaN MISHEMTs B Romanczyk, S Wienecke, M Guidry, H Li, E Ahmadi, X Zheng, S Keller, ... IEEE Transactions on Electron Devices 65 (1), 45-50, 2017 | 231 | 2017 |
| N-polar GaN cap MISHEMT with record power density exceeding 6.5 W/mm at 94 GHz S Wienecke, B Romanczyk, M Guidry, H Li, E Ahmadi, K Hestroffer, ... IEEE Electron Device Letters 38 (3), 359-362, 2017 | 127 | 2017 |
| W-band power performance of SiN-passivated N-polar GaN deep recess HEMTs B Romanczyk, X Zheng, M Guidry, H Li, N Hatui, C Wurm, A Krishna, ... IEEE Electron Device Letters 41 (3), 349-352, 2020 | 114 | 2020 |
| N-polar GaN HEMTs exhibiting record breakdown voltage over 2000 V and low dynamic on-resistance OS Koksaldi, J Haller, H Li, B Romanczyk, M Guidry, S Wienecke, S Keller, ... IEEE Electron Device Letters 39 (7), 1014-1017, 2018 | 96 | 2018 |
| High linearity and high gain performance of N-polar GaN MIS-HEMT at 30 GHz P Shrestha, M Guidry, B Romanczyk, N Hatui, C Wurm, A Krishna, ... IEEE Electron Device Letters 41 (5), 681-684, 2020 | 79 | 2020 |
| N-polar GaN MIS-HEMTs on sapphire with high combination of power gain cutoff frequency and three-terminal breakdown voltage X Zheng, M Guidry, H Li, E Ahmadi, K Hestroffer, B Romanczyk, ... IEEE Electron Device Letters 37 (1), 77-80, 2015 | 51 | 2015 |
| 6.2 W/Mm and record 33.8% PAE at 94 GHz from N-polar GaN deep recess MIS-HEMTs with ALD Ru gates W Liu, B Romanczyk, M Guidry, N Hatui, C Wurm, W Li, P Shrestha, ... IEEE Microwave and Wireless Components Letters 31 (6), 748-751, 2021 | 50 | 2021 |
| N-polar deep recess MISHEMTs with record 2.9 W/mm at 94 GHz S Wienecke, B Romanczyk, M Guidry, H Li, X Zheng, E Ahmadi, ... IEEE Electron Device Letters 37 (6), 713-716, 2016 | 49 | 2016 |
| N-polar GaN-on-Sapphire deep recess HEMTs with high W-band power density B Romanczyk, W Li, M Guidry, N Hatui, A Krishna, C Wurm, S Keller, ... IEEE Electron Device Letters 41 (11), 1633-1636, 2020 | 46 | 2020 |
| Engineering the (In, Al, Ga) N back-barrier to achieve high channel-conductivity for extremely scaled channel-thicknesses in N-polar GaN high-electron-mobility-transistors J Lu, X Zheng, M Guidry, D Denninghoff, E Ahmadi, S Lal, S Keller, ... Applied Physics Letters 104 (9), 2014 | 39 | 2014 |
| W-band N-polar GaN MISHEMTs with high power and record 27.8% efficiency at 94 GHz B Romanczyk, M Guidry, S Wienecke, H Li, E Ahmadi, X Zheng, S Keller, ... 2016 IEEE International Electron Devices Meeting (IEDM), 3.5. 1-3.5. 4, 2016 | 36 | 2016 |
| Record RF power performance at 94 GHz from millimeter-wave N-polar GaN-on-sapphire deep-recess HEMTs W Li, B Romanczyk, M Guidry, E Akso, N Hatui, C Wurm, W Liu, ... IEEE Transactions on Electron Devices 70 (4), 2075-2080, 2023 | 34 | 2023 |
| Small-signal model extraction of mm-wave N-polar GaN MISHEMT exhibiting record performance: Analysis of gain and validation by 94 GHz loadpull M Guidry, S Wienecke, B Romanczyk, H Li, X Zheng, E Ahmadi, ... 2016 IEEE MTT-S International Microwave Symposium (IMS), 1-4, 2016 | 33 | 2016 |
| High frequency N-polar GaN planar MIS-HEMTs on sapphire with high breakdown and low dispersion X Zheng, H Li, E Ahmadi, K Hestroffer, M Guidry, B Romanczyk, ... 2016 Lester Eastman Conference (LEC), 42-45, 2016 | 30 | 2016 |
| High performance N-polar GaN HEMTs with OIP3/Pdc∼12dB at 10GHz A Arias, P Rowell, J Bergman, M Urteaga, K Shinohara, X Zheng, H Li, ... 2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 1-3, 2017 | 29 | 2017 |
| Bias-dependent electron velocity extracted from N-polar GaN deep recess HEMTs B Romanczyk, M Guidry, X Zheng, H Li, E Ahmadi, S Keller, UK Mishra IEEE Transactions on Electron Devices 67 (4), 1542-1546, 2020 | 28 | 2020 |
| Demonstration of 30 GHz OIP3/PDC> 10 dB by mm-wave N-polar deep recess MISHEMTs M Guidry, B Romanczyk, H Li, E Ahmadi, S Wienecke, X Zheng, S Keller, ... 2019 14th European Microwave Integrated Circuits Conference (EuMIC), 64-67, 2019 | 28 | 2019 |
| Observation of hot electron and impact ionization in N-polar GaN MIS-HEMTs D Bisi, C De Santi, M Meneghini, S Wienecke, M Guidry, H Li, E Ahmadi, ... IEEE Electron Device Letters 39 (7), 1007-1010, 2018 | 28 | 2018 |
| First demonstration of RF N-polar GaN MIS-HEMTs grown on bulk GaN using PAMBE SS Pasayat, E Ahmadi, B Romanczyk, O Koksaldi, A Agarwal, M Guidry, ... Semiconductor Science and Technology 34 (4), 045009, 2019 | 27 | 2019 |
| Analysis of MOCVD SiNx Passivated N-Polar GaN MIS-HEMTs on Sapphire With High X Zheng, H Li, M Guidry, B Romanczyk, E Ahmadi, K Hestroffer, ... IEEE Electron Device Letters 39 (3), 409-412, 2018 | 26 | 2018 |
