| Modeling Fatigue-Breakdown Dilemma in Ferroelectric Hf0.5 Zr0.5 O2 and optimized Programming Strategies HH Huang, CY Cho, TY Lin, TS Huang, MH Wu, IT Wang, YK Chang, ... 2022 International Electron Devices Meeting (IEDM), 13.5. 1-13.5. 4, 2022 | 10 | 2022 |
| Highly Reliable, Scalable, and High-Yield HfZrOx FRAM by Barrier Layer Engineering and Post-Metal Annealing YD Lin, PC Yeh, JY Dai, JW Su, HH Huang, CY Cho, YT Tang, TH Hou, ... 2022 International Electron Devices Meeting (IEDM), 32.1. 1-32.1. 4, 2022 | 9 | 2022 |
| Wake-Up of Ultrathin Ferroelectric Hf0.5Zr0.5O2: The Origin and Physical Modeling CY Cho, TY Chao, TY Lin, IT Wang, YS Chen, YC Ong, YD Lin, PC Yeh, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 5 | 2023 |
| Two-transistor metal-ferroelectric-metal field-effect transistor (2T-MFMFET) for scalable embedded nonvolatile memory—Part I: Compact modeling MH Wu, CY Cho, HH Huang, TS Huang, IT Wang, WY Jang, SZ Chang, ... IEEE Transactions on Electron Devices 70 (12), 6262-6267, 2023 | 5 | 2023 |
| Unraveling the wake-up mechanism in ultrathin ferroelectric hf0. 5 zr0. 5o: Interfacial layer soft breakdown and physical modeling CY Cho, TY Chao, TY Lin, IT Wang, S De, YS Chen, YC Ong, Y De Lin, ... IEEE Transactions on Electron Devices 71 (5), 3365-3370, 2024 | 3 | 2024 |
| Perspective Roadmap of Advanced HfO2-based Ferroelectric Field Effect Transistors S De, CY Cho, T Ali, W Banerjee, LP Ramírez, N Barrett, S Majumder, ... 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2024 | 3 | 2024 |
| Trade-off between thermal budget and thickness scaling: A bottleneck on quest for beol compatible ultra-thin ferroelectric films sub-5nm CY Chiu, S De, CY Cho, TH Hou 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2024 | 3 | 2024 |
| Exploring BEOL-Compatible Ferroelectricity in Ultra-Thin Hafnium Zirconium Oxide: Thermal Budget, FTJ Characteristics, and Device Reliability CY Cho, CY Chiu, S De, TH Hou IEEE Journal of the Electron Devices Society, 2024 | 1 | 2024 |
| Highly Reliable and High-Yield 1.2 V HfZrOx FRAM and its Physical Origin via Micrometer-Scale Nanocrystalline Domain Analysis YD Lin, CY Cho, JW Su, YH Wei, LY Hung, PH Chang, CC Hsu, PC Yeh, ... 2024 IEEE International Electron Devices Meeting (IEDM), 1-4, 2024 | | 2024 |
| Unraveling the Wake-Up Mechanism in Ultrathin Ferroelectric HfZrO: Interfacial Layer Soft Breakdown and Physical Modeling CY Cho, TY Chao, TY Lin, IT Wang, S De, YS Chen, YC Ong, YD Lin, ... IEEE Transactions on Electron Devices, 2024 | | 2024 |
