مقاله‌های دارای تعهدات انتشار عمومی - Fatih Akyolبیشتر بدانید
جای دیگری دردسترس نیست: ۴
Simulation of β-Ga2O3 vertical Schottky diode based photodetectors revealing average hole mobility of 20 cm2 V− 1 s− 1
F Akyol
Journal of Applied Physics 127 (7), 2020
تعهدات: Scientific and Technological Research Council of Turkey
Close oxygen coupled low-pressure chemical vapor deposition growth of high quality β− Ga2O3 on sapphire
F Akyol, İ Demir
Materials Science in Semiconductor Processing 146, 106645, 2022
تعهدات: Scientific and Technological Research Council of Turkey
Small-signal characteristics of graded AlGaN channel PolFETs
S Bajaj, Z Yang, F Akyol, PS Park, Y Zhang, SH Sohel, S Krishnamoorthy, ...
2017 75th Annual Device Research Conference (DRC), 1-2, 2017
تعهدات: US Department of Defense
Deep level defects in N-rich and In-rich InxGa1− XN: in composition dependence
E Gür, F Akyol, S Krishnamoorthy, S Rajan, SA Ringel
Superlattices and Microstructures 99, 67-71, 2016
تعهدات: US National Science Foundation
جای دیگری دردسترس است: ۱۴
AlGaN channel field effect transistors with graded heterostructure ohmic contacts
S Bajaj, F Akyol, S Krishnamoorthy, Y Zhang, S Rajan
Applied Physics Letters 109 (13), 2016
تعهدات: US National Science Foundation
Interband tunneling for hole injection in III-nitride ultraviolet emitters
Y Zhang, S Krishnamoorthy, JM Johnson, F Akyol, A Allerman, ...
Applied Physics Letters 106 (14), 2015
تعهدات: US Department of Energy
Graded AlGaN channel transistors for improved current and power gain linearity
S Bajaj, Z Yang, F Akyol, PS Park, Y Zhang, AL Price, S Krishnamoorthy, ...
IEEE Transactions on Electron Devices 64 (8), 3114-3119, 2017
تعهدات: US Department of Defense
Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency
Y Zhang, Z Jamal-Eddine, F Akyol, S Bajaj, JM Johnson, G Calderon, ...
Applied Physics Letters 112 (7), 2018
تعهدات: US National Science Foundation, US Department of Energy, US Department of …
Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions
Y Zhang, S Krishnamoorthy, F Akyol, AA Allerman, MW Moseley, ...
Applied Physics Letters 109 (12), 2016
تعهدات: US National Science Foundation, US Department of Energy
Tunnel-injected sub-260 nm ultraviolet light emitting diodes
Y Zhang, S Krishnamoorthy, F Akyol, S Bajaj, AA Allerman, MW Moseley, ...
Applied Physics Letters 110 (20), 2017
تعهدات: US National Science Foundation, US Department of Energy
High Al-content AlGaN transistor with 0.5 A/mm current density and lateral breakdown field exceeding 3.6 MV/cm
S Bajaj, A Allerman, A Armstrong, T Razzak, V Talesara, W Sun, SH Sohel, ...
IEEE Electron Device Letters 39 (2), 256-259, 2017
تعهدات: US Department of Energy, US Department of Defense
Low-resistance GaN tunnel homojunctions with 150 kA/cm2 current and repeatable negative differential resistance
F Akyol, S Krishnamoorthy, Y Zhang, J Johnson, J Hwang, S Rajan
Applied Physics Letters 108 (13), 2016
تعهدات: US National Science Foundation
Reflective metal/semiconductor tunnel junctions for hole injection in AlGaN UV LEDs
Y Zhang, S Krishnamoorthy, F Akyol, JM Johnson, AA Allerman, ...
Applied Physics Letters 111 (5), 2017
تعهدات: US National Science Foundation, US Department of Energy
Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes
Y Zhang, S Krishnamoorthy, F Akyol, AA Allerman, MW Moseley, ...
Applied Physics Letters 109 (19), 2016
تعهدات: US National Science Foundation, US Department of Energy
Enhanced light extraction in tunnel junction-enabled top emitting UV LEDs
Y Zhang, AA Allerman, S Krishnamoorthy, F Akyol, MW Moseley, ...
Applied Physics Express 9 (5), 052102, 2016
تعهدات: US National Science Foundation, US Department of Energy
Ultralow-voltage-drop GaN/InGaN/GaN tunnel junctions with 12% indium content
F Akyol, Y Zhang, S Krishnamoorthy, S Rajan
Applied Physics Express 10 (12), 121003, 2017
تعهدات: US National Science Foundation
Investigating the effect of self-trapped holes in the current gain mechanism of β–Ga 2 O 3 Schottky diode photodetectors
F Akyol
Turk J Phys 45, 169, 2021
تعهدات: Scientific and Technological Research Council of Turkey
Carrier transport in LPCVD grown Ge-doped β-Ga2O3/4H-SiC isotype heterojunction
T Saquib, F Akyol, H Ozden, N Somaiah, J Sahoo, R Muralidharan, ...
Journal of Applied Physics 135 (6), 2024
تعهدات: Department of Science & Technology, India
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