| Polarization-engineered GaN/InGaN/GaN tunnel diodes S Krishnamoorthy, DN Nath, F Akyol, PS Park, M Esposto, S Rajan Applied Physics Letters 97 (20), 2010 | 199 | 2010 |
| Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes F Akyol, DN Nath, S Krishnamoorthy, PS Park, S Rajan Applied Physics Letters 100 (11), 2012 | 186 | 2012 |
| Low resistance GaN/InGaN/GaN tunnel junctions S Krishnamoorthy, F Akyol, PS Park, S Rajan Applied Physics Letters 102 (11), 2013 | 162 | 2013 |
| Polarity in GaN and ZnO: Theory, measurement, growth, and devices J Zuniga-Perez, V Consonni, L Lymperakis, X Kong, A Trampert, ... Applied Physics Reviews 3 (4), 2016 | 149 | 2016 |
| N-polar III–nitride green (540 nm) light emitting diode F Akyol, DN Nath, E Gür, PS Park, S Rajan Japanese Journal of Applied Physics 50 (5R), 052101, 2011 | 106 | 2011 |
| AlGaN channel field effect transistors with graded heterostructure ohmic contacts S Bajaj, F Akyol, S Krishnamoorthy, Y Zhang, S Rajan Applied Physics Letters 109 (13), 2016 | 105 | 2016 |
| Interband tunneling for hole injection in III-nitride ultraviolet emitters Y Zhang, S Krishnamoorthy, JM Johnson, F Akyol, A Allerman, ... Applied Physics Letters 106 (14), 2015 | 103 | 2015 |
| Graded AlGaN channel transistors for improved current and power gain linearity S Bajaj, Z Yang, F Akyol, PS Park, Y Zhang, AL Price, S Krishnamoorthy, ... IEEE Transactions on Electron Devices 64 (8), 3114-3119, 2017 | 99 | 2017 |
| Density-dependent electron transport and precise modeling of GaN high electron mobility transistors S Bajaj, OF Shoron, PS Park, S Krishnamoorthy, F Akyol, TH Hung, ... Applied Physics Letters 107 (15), 2015 | 98 | 2015 |
| Tunneling-based carrier regeneration in cascaded GaN light emitting diodes to overcome efficiency droop F Akyol, S Krishnamoorthy, S Rajan Applied Physics Letters 103 (8), 2013 | 97 | 2013 |
| InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes S Krishnamoorthy, F Akyol, S Rajan Applied Physics Letters 105 (14), 2014 | 94 | 2014 |
| Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency Y Zhang, Z Jamal-Eddine, F Akyol, S Bajaj, JM Johnson, G Calderon, ... Applied Physics Letters 112 (7), 2018 | 92 | 2018 |
| Modeling of high composition AlGaN channel high electron mobility transistors with large threshold voltage S Bajaj, TH Hung, F Akyol, D Nath, S Rajan Applied Physics Letters 105 (26), 2014 | 86 | 2014 |
| Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions Y Zhang, S Krishnamoorthy, F Akyol, AA Allerman, MW Moseley, ... Applied Physics Letters 109 (12), 2016 | 82 | 2016 |
| Tunnel-injected sub-260 nm ultraviolet light emitting diodes Y Zhang, S Krishnamoorthy, F Akyol, S Bajaj, AA Allerman, MW Moseley, ... Applied Physics Letters 110 (20), 2017 | 78 | 2017 |
| High Al-content AlGaN transistor with 0.5 A/mm current density and lateral breakdown field exceeding 3.6 MV/cm S Bajaj, A Allerman, A Armstrong, T Razzak, V Talesara, W Sun, SH Sohel, ... IEEE Electron Device Letters 39 (2), 256-259, 2017 | 73 | 2017 |
| Low-resistance GaN tunnel homojunctions with 150 kA/cm2 current and repeatable negative differential resistance F Akyol, S Krishnamoorthy, Y Zhang, J Johnson, J Hwang, S Rajan Applied Physics Letters 108 (13), 2016 | 63 | 2016 |
| GaN-based three-junction cascaded light-emitting diode with low-resistance InGaN tunnel junctions F Akyol, S Krishnamoorthy, Y Zhang, S Rajan Applied Physics Express 8 (8), 082103, 2015 | 57 | 2015 |
| Reflective metal/semiconductor tunnel junctions for hole injection in AlGaN UV LEDs Y Zhang, S Krishnamoorthy, F Akyol, JM Johnson, AA Allerman, ... Applied Physics Letters 111 (5), 2017 | 54 | 2017 |
| Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes Y Zhang, S Krishnamoorthy, F Akyol, AA Allerman, MW Moseley, ... Applied Physics Letters 109 (19), 2016 | 43 | 2016 |
Siddharth RajanElectrical and Computer Engineering, Ohio State Universityایمیل تأیید شده در ece.osu.edu