| Vibrational spectra of alumina-and silica-supported vanadia revisited: An experimental and theoretical model catalyst study N Magg, B Immaraporn, JB Giorgi, T Schroeder, M Bäumer, J Döbler, ... Journal of Catalysis 226 (1), 88-100, 2004 | 314 | 2004 |
| Impact of Temperature on the Resistive Switching Behavior of Embedded -Based RRAM Devices C Walczyk, D Walczyk, T Schroeder, T Bertaud, M Sowinska, M Lukosius, ... IEEE transactions on electron devices 58 (9), 3124-3131, 2011 | 289 | 2011 |
| Ultra‐sensitive graphene‐plasmonic hybrid platform for label‐free detection P Wang, O Liang, W Zhang, T Schroeder, YH Xie Advanced Materials 25 (35), 4918-4924, 2013 | 244 | 2013 |
| Model for the Resistive Switching Effect in MIM Structures Based on the Transmission Properties of Narrow Constrictions EA Miranda, C Walczyk, C Wenger, T Schroeder IEEE Electron Device Letters 31 (6), 609-611, 2010 | 217 | 2010 |
| Towards forming-free resistive switching in oxygen engineered HfO2− x SU Sharath, T Bertaud, J Kurian, E Hildebrandt, C Walczyk, P Calka, ... Applied physics letters 104 (6), 2014 | 192 | 2014 |
| Label-free SERS selective detection of dopamine and serotonin using graphene-Au nanopyramid heterostructure P Wang, M Xia, O Liang, K Sun, AF Cipriano, T Schroeder, H Liu, YH Xie Analytical chemistry 87 (20), 10255-10261, 2015 | 187 | 2015 |
| EPITAXIAL GROWTH OF SiO2 ON Mo(112) T Schroeder, M Adelt, B Richter, M Naschitzki, M Bäumer, HJ Freund Surface Review and Letters 7 (01n02), 7-14, 2000 | 171 | 2000 |
| Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device A Di Bartolomeo, F Giubileo, G Luongo, L Iemmo, N Martucciello, G Niu, ... 2D Materials 4 (1), 015024, 2016 | 164 | 2016 |
| Hybrid graphene/silicon Schottky photodiode with intrinsic gating effect A Di Bartolomeo, G Luongo, F Giubileo, N Funicello, G Niu, T Schroeder, ... 2D Materials 4 (2), 025075, 2017 | 145 | 2017 |
| Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications C Walczyk, C Wenger, R Sohal, M Lukosius, A Fox, J Dąbrowski, ... Journal of Applied Physics 105 (11), 2009 | 140 | 2009 |
| Formation of a faceted MoO2 epilayer on Mo (1 1 2) studied by XPS, UPS and STM T Schroeder, J Zegenhagen, N Magg, B Immaraporn, HJ Freund Surface science 552 (1-3), 85-97, 2004 | 133 | 2004 |
| Imaging of strain and lattice orientation by quick scanning X-ray microscopy combined with three-dimensional reciprocal space mapping GA Chahine, MI Richard, RA Homs-Regojo, TN Tran-Caliste, D Carbone, ... Journal of Applied Crystallography 47 (2), 762-769, 2014 | 130 | 2014 |
| Study of CO adsorption on crystalline-silica-supported palladium particles JB Giorgi, T Schroeder, M Bäumer, HJ Freund Surface science 498 (1-2), L71-L77, 2002 | 126 | 2002 |
| Tensile Ge microstructures for lasing fabricated by means of a silicon complementary metal-oxide-semiconductor process G Capellini, C Reich, S Guha, Y Yamamoto, M Lisker, M Virgilio, A Ghrib, ... Optics express 22 (1), 399-410, 2014 | 124 | 2014 |
| Control of Switching Modes and Conductance Quantization in Oxygen Engineered HfOx based Memristive Devices SU Sharath, S Vogel, L Molina‐Luna, E Hildebrandt, C Wenger, J Kurian, ... Advanced Functional Materials 27 (32), 1700432, 2017 | 123 | 2017 |
| Field emission from single and few-layer graphene flakes S Santandrea, F Giubileo, V Grossi, S Santucci, M Passacantando, ... Applied Physics Letters 98 (16), 2011 | 119 | 2011 |
| Model catalyst studies on vanadia particles deposited onto a thin-film alumina support. 1. Structural characterization N Magg, JB Giorgi, T Schroeder, M Bäumer, HJ Freund The journal of physical chemistry b 106 (34), 8756-8761, 2002 | 118 | 2002 |
| Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach G Capellini, G Kozlowski, Y Yamamoto, M Lisker, C Wenger, G Niu, ... Journal of Applied Physics 113 (1), 2013 | 117 | 2013 |
| Hard x-ray photoelectron spectroscopy study of the electroforming in Ti/HfO2-based resistive switching structures M Sowinska, T Bertaud, D Walczyk, S Thiess, MA Schubert, M Lukosius, ... Applied Physics Letters 100 (23), 2012 | 115 | 2012 |
| Controlled oxygen vacancy induced p-type conductivity in HfO2− x thin films E Hildebrandt, J Kurian, MM Müller, T Schroeder, HJ Kleebe, L Alff Applied Physics Letters 99 (11), 2011 | 114 | 2011 |
Christian WengerIHP GmbH - Leibniz institute for innovative microelectronicsایمیل تأیید شده در ihp-microelectronics.com
