مقاله‌های دارای تعهدات انتشار عمومی - Henry Collinsبیشتر بدانید
جای دیگری دردسترس نیست: ۷
مرور
First demonstration of four-finger N-polar GaN HEMT exhibiting record 712-mW output power with 31.7% PAE at 94 GHz‏
E Akso, H Collins, C Clymore, W Li, M Guidry, B Romanczyk, C Wurm, ...‏
IEEE Microwave and Wireless Technology Letters 33 (6), 683-686, 2023‏
تعهدات: US Department of Defense‏
مرور
Record 94 GHz performance from N-polar GaN-on-sapphire MIS-HEMTs: 5.8 W/mm and 38.5% PAE‏
W Li, B Romanczyk, E Akso, M Guidry, N Hatui, C Wurm, W Liu, ...‏
2022 International Electron Devices Meeting (IEDM), 11.2. 1-11.2. 4, 2022‏
تعهدات: US Department of Defense‏
مرور
Schottky barrier gate N-polar GaN-on-sapphire deep recess HEMT with record 10.5 dB linear gain and 50.2% PAE at 94 GHz‏
E Akso, H Collins, K Khan, B Wang, W Li, C Clymore, E Kayede, W Liu, ...‏
IEEE Microwave and Wireless Technology Letters 34 (2), 183-186, 2024‏
تعهدات: US Department of Defense‏
مرور
Record 1 W output power from a single N-polar GaN MISHEMT at 94 GHz‏
E Akso, C Clymore, W Liu, H Collins, B Romanczyk, W Li, N Hatui, ...‏
2023 Device Research Conference (DRC), 1-2, 2023‏
تعهدات: US Department of Defense‏
مرور
First comparison of active and passive load pull at W-band‏
CJ Clymore, E Akso, M Guidry, H Collins, W Liu, C Wurm, N Hatui, ...‏
2023 101st ARFTG Microwave Measurement Conference (ARFTG), 1-4, 2023‏
تعهدات: US Department of Defense‏
مرور
Record D-band performance from prematched N-polar GaN-on-sapphire transistor with 2 W/mm and 10.6% PAE at 132 GHz‏
E Akso, W Li, C Clymore, E O’Malley, M Guidry, J Kim, B Romanczyk, ...‏
IEEE Microwave and Wireless Technology Letters, 2024‏
تعهدات: US Department of Defense‏
مرور
N-polar GaN MISHEMT with bias-insensitive linearity at 30 GHz‏
H Collins, E Akso, N Hatui, CJ Clymore, C Wurm, R Hamwey, M Guidry, ...‏
IEEE Microwave and Wireless Technology Letters 34 (3), 287-290, 2024‏
تعهدات: US Department of Defense‏
جای دیگری دردسترس است: ۷
مرور
Review of wearable thermoelectric energy harvesting: From body temperature to electronic systems‏
A Nozariasbmarz, H Collins, K Dsouza, MH Polash, M Hosseini, M Hyland, ...‏
Applied Energy 258, 114069, 2020‏
تعهدات: US National Science Foundation‏
مرور
Record RF power performance at 94 GHz from millimeter-wave N-polar GaN-on-sapphire deep-recess HEMTs‏
W Li, B Romanczyk, M Guidry, E Akso, N Hatui, C Wurm, W Liu, ...‏
IEEE Transactions on Electron Devices 70 (4), 2075-2080, 2023‏
تعهدات: US Department of Defense‏
مرور
Demonstration of device-quality 60% relaxed In0. 2Ga0. 8N on porous GaN pseudo-substrates grown by PAMBE‏
C Wurm, H Collins, N Hatui, W Li, S Pasayat, R Hamwey, K Sun, I Sayed, ...‏
Journal of Applied Physics 131 (1), 2022‏
تعهدات: US Department of Defense‏
مرور
Fully relaxed, crack-free AlGaN with upto 50% Al composition grown on porous GaN pseudo-substrate‏
N Hatui, H Collins, E Kayede, SS Pasayat, W Li, S Keller, UK Mishra‏
Crystals 12 (7), 989, 2022‏
تعهدات: US Department of Defense‏
مرور
Investigation and optimization of N-polar GaN porosification for regrowth of smooth hillocks-free GaN films‏
H Collins, I Sayed, W Liu, SS Pasayat, AA Taylor, W Li, S Keller, ...‏
Applied Physics Letters 119 (4), 2021‏
تعهدات: US Department of Defense‏
مرور
Demonstration of 82% relaxed In0. 18Ga0. 82N on porous GaN pseudo-substrate by plasma-assisted molecular beam epitaxy‏
K Khan, C Wurm, H Collins, VR Muthuraj, MI Khan, C Lee, S Keller, ...‏
Physica Scripta 99 (1), 015027, 2023‏
تعهدات: US Department of Defense‏
مرور
N-Polar Indium Nitride Quantum Dashes and Quantum Wire-like Structures: MOCVD Growth and Characterization‏
VR Muthuraj, W Liu, H Collins, W Li, R Hamwey, SP DenBaars, UK Mishra, ...‏
Crystals 13 (4), 699, 2023‏
تعهدات: US National Science Foundation, US Department of Defense‏
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