| Electrostatics improvement in 3-D tri-gate over ultra-thin body planar InGaAs quantum well field effect transistors with high-K gate dielectric and scaled gate-to-drain/gate-to … M Radosavljevic, G Dewey, D Basu, J Boardman, B Chu-Kung, ... 2011 international electron devices meeting, 33.1. 1-33.1. 4, 2011 | 196 | 2011 |
| Effect of edge roughness on electronic transport in graphene nanoribbon channel metal-oxide-semiconductor field-effect transistors D Basu, MJ Gilbert, LF Register, SK Banerjee, AH MacDonald Applied Physics Letters 92 (4), 2008 | 159 | 2008 |
| Graphene for CMOS and beyond CMOS applications SK Banerjee, LF Register, E Tutuc, D Basu, S Kim, D Reddy, ... Proceedings of the IEEE 98 (12), 2032-2046, 2010 | 122 | 2010 |
| Non-planar semiconductor device having channel region with low band-gap cladding layer M Radosavljevic, G Dewey, B Chu-Kung, D Basu, SK Gardner, S Suri, ... US Patent 8,785,909, 2014 | 47 | 2014 |
| Tight-binding study of electron-hole pair condensation in graphene bilayers: Gate control and system-parameter dependence D Basu, LF Register, D Reddy, AH MacDonald, SK Banerjee Physical Review B—Condensed Matter and Materials Physics 82 (7), 075409, 2010 | 32 | 2010 |
| Intel 4 CMOS technology featuring advanced FinFET transistors optimized for high density and high-performance computing B Sell, S An, J Armstrong, D Bahr, B Bains, R Bambery, K Bang, D Basu, ... 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 26 | 2022 |
| An explicit surface-potential-based MOSFET model incorporating the quantum mechanical effects D Basu, AK Dutta Solid-state electronics 50 (7-8), 1299-1309, 2006 | 24 | 2006 |
| Compact model for ultrathin low electron effective mass double gate MOSFET AS Roy, SP Mudanai, D Basu, MA Stettler IEEE Transactions on Electron Devices 61 (2), 308-313, 2013 | 22 | 2013 |
| Surface roughness exacerbated performance degradation in silicon nanowire transistors D Basu, MJ Gilbert, SK Banerjee Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2006 | 20 | 2006 |
| Effect of interlayer bare tunneling on electron-hole coherence in graphene bilayers D Basu, LF Register, AH MacDonald, SK Banerjee Physical Review B—Condensed Matter and Materials Physics 84 (3), 035449, 2011 | 19 | 2011 |
| Scaling effect on specific contact resistivity in nano-scale metal-semiconductor contacts SH Park, N Kharche, D Basu, Z Jiang, SK Nayak, CE Weber, G Hegde, ... 71st Device Research Conference, 125-126, 2013 | 17 | 2013 |
| Three discrete areas within the chromosomal 8p21. 3–23 region are associated with the development of breast carcinoma of Indian patients N Bhattacharya, N Chunder, D Basu, A Roy, S Mandal, J Majumder, ... Experimental and molecular pathology 76 (3), 264-271, 2004 | 14 | 2004 |
| Ballistic band-to-band tunneling in the OFF state in InGaAs MOSFETs D Basu, R Kotlyar, CE Weber, MA Stettler IEEE Transactions on Electron Devices 61 (10), 3417-3422, 2014 | 10 | 2014 |
| National ambient air quality status and trends in India–2010 S Kamyotra, D Basu, S Agrawal, T Darbari, S Roychoudhury, J Hagar, ... Delhi, India: Central Pollution Control Board (CPCB) Ministry of Environment …, 2012 | 6 | 2012 |
| Molecular diagnosis of myotonic dystrophy and Huntington's disease from Calcutta, India. P Basu, PK Gunguly, D Basu, NP Bhattacharyya, NP Bhattacharya Neurology India 46 (3), 199-203, 1998 | 6 | 1998 |
| Source contact and channel interface to reduce body charging from band-to-band tunneling D Basu, R Mehandru, SH Sung US Patent 11,094,716, 2021 | 5 | 2021 |
| From Coherent States in Adjacent Graphene Layers toward Low‐Power Logic Circuits LF Register, D Basu, D Reddy Advances in Condensed Matter Physics 2011 (1), 258731, 2011 | 4 | 2011 |
| Hyperfunctioning papillary carcinoma of thyroid: a case report and brief literature review SC Sistla, J John, N Maroju, D Basu Internet J Endocrinol 3 (2), 2007 | 4 | 2007 |
| Reducing band-to-band tunneling in semiconductor devices B Chu-Kung, JT Kavalieros, SH Sung, S Chouksey, HW Kennel, D Basu, ... US Patent 11,233,148, 2022 | 3 | 2022 |
| Using TCAD, response surface model and Monte Carlo methods to model processes and reduce device variation D Basu, J Guha, P Hatab, P Vaidyanathan, C Mouli, SK Groothuis 2009 International Conference on Simulation of Semiconductor Processes and …, 2009 | 3 | 2009 |
Leonard F. RegisterProfessor of Electrical and Computer Engineeringایمیل تأیید شده در austin.utexas.edu