مقاله‌های دارای تعهدات انتشار عمومی - Patrick Fayبیشتر بدانید
جای دیگری دردسترس نیست: ۴۰
Power Scaling of Graded-Channel GaN HEMTs With Mini-Field-Plate T-gate and 156 GHz fT
JS Moon, B Grabar, J Wong, D Chuong, E Arkun, DV Morales, P Chen, ...
IEEE Electron Device Letters 42 (6), 796-799, 2021
تعهدات: US Department of Defense
360 GHz fMAX Graded-Channel AlGaN/GaN HEMTs for mmW Low-Noise Applications
JS Moon, J Wong, B Grabar, M Antcliffe, P Chen, E Arkun, I Khalaf, ...
IEEE Electron Device Letters 41 (8), 1173-1176, 2020
تعهدات: US Department of Defense
Alloy engineered nitride tunneling field-effect transistor: A solution for the challenge of heterojunction tfets
TA Ameen, H Ilatikhameneh, P Fay, A Seabaugh, R Rahman, G Klimeck
IEEE Transactions on Electron Devices 66 (1), 736-742, 2018
تعهدات: US National Science Foundation, US Department of Defense
Perspectives of TFETs for low power analog ICs
B Senale-Rodríguez, Y Lu, P Fay, D Jena, A Seabaugh, HG Xing, ...
2012 IEEE Subthreshold Microelectronics Conference (SubVT), 1-3, 2012
تعهدات: Government of Spain
High voltage vertical pn diodes with ion-implanted edge termination and sputtered SiNx passivation on GaN substrates
J Wang, L Cao, J Xie, E Beam, R McCarthy, C Youtsey, P Fay
2017 IEEE International Electron Devices Meeting (IEDM), 9.6. 1-9.6. 4, 2017
تعهدات: US Department of Energy
Low-loss coplanar waveguides on GaN-on-Si substrates
L Cao, CF Lo, H Marchand, W Johnson, P Fay
IEEE Microwave and Wireless Components Letters 28 (10), 861-863, 2018
تعهدات: US National Science Foundation, US Department of Defense
High-speed graded-channel GaN HEMTs with linearity and efficiency
JS Moon, B Grabar, M Antcliffe, J Wong, C Dao, P Chen, E Arkun, I Khalaf, ...
2020 IEEE/MTT-S International Microwave Symposium (IMS), 573-575, 2020
تعهدات: US Department of Defense
Cryogenic RF CMOS on 22nm FDSOI Platform with Record fT=495GHz and fMAX=497GHz
W Chakraborty, KA Aabrar, J Gomez, R Saligram, A Raychowdhury, P Fay, ...
2021 Symposium on VLSI Technology, 1-2, 2021
تعهدات: US Department of Defense
Graded-channel GaN-based HEMTs for high linearity amplifiers at millimeter-wave
N Venkatesan, G Silva-Oelker, P Fay
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and …, 2019
تعهدات: US Department of Defense
Coplanar waveguide performance comparison of GaN-on-Si and GaN-on-SiC substrates
L Cao, CF Lo, H Marchand, W Johnson, P Fay
2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 1-4, 2017
تعهدات: US National Science Foundation, US Department of Defense
Highly linear and efficient mm-Wave GaN HEMTs and MMICs
J Moon, B Grabar, J Wong, J Tai, E Arkun, DV Morales, C Dao, ...
2022 IEEE/MTT-S International Microwave Symposium-IMS 2022, 302-304, 2022
تعهدات: US Department of Defense
Ultra-linear and high-efficiency GaN technology for 5G and beyond
J Moon, B Grabar, J Wong, C Dao, E Arkun, DV Morales, J Tai, D Fanning, ...
2022 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and …, 2022
تعهدات: US Department of Defense
Electric field engineering in graded-channel GaN-based HEMTs
N Venkatesan, JS Moon, P Fay
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2021
تعهدات: US Department of Defense
Higher-k zirconium doped hafnium oxide (HZO) trigate transistors with higher DC and RF performance and improved reliability
W Chakraborty, MS Jose, J Gomez, A Saha, KA Aabrar, P Fay, S Gupta, ...
2021 Symposium on VLSI Technology, 1-2, 2021
تعهدات: US Department of Defense
Multi-antenna SAR estimation in linear time
A Ebadi-Shahrivar, P Fay, BM Hochwald, DJ Love
2018 IEEE International Symposium on Antennas and Propagation & USNC/URSI …, 2018
تعهدات: US National Science Foundation
W-band GaN IMPATT diodes for high power millimeter-wave generation
L Cao, H Ye, J Wang, P Fay
2019 IEEE National Aerospace and Electronics Conference (NAECON), 728-731, 2019
تعهدات: US Department of Defense
RF performance of GaN-based graded-channel HEMTs
N Venkatesan, J Moon, J Wong, B Grabar, M Antcliffe, P Chen, E Arkun, ...
2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2020
تعهدات: US Department of Defense
Ferroelectric-gated GaN HEMTs for RF and mm-wave switch applications
H Ye, C Wu, N Venkatesan, J Wang, Y Cao, A Xie, E Beam, P Fay
2022 International Symposium on VLSI Technology, Systems and Applications …, 2022
تعهدات: US Department of Defense
High-performance optically controlled RF switches for advanced reconfigurable millimeterwave-to-THz circuits
Y Shi, J Ren, Y Deng, P Fay, L Liu
2019 IEEE MTT-S International Microwave Conference on Hardware and Systems …, 2019
تعهدات: US National Science Foundation
Vertical GaN-on-GaN pn diodes with 10-A forward current and 1.6 kV breakdown voltage
J Wang, L Cao, J Xie, E Beam, C Youtsey, R McfCarthy, L Guido, P Fay
2018 76th Device Research Conference (DRC), 1-2, 2018
تعهدات: US Department of Energy
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