| The 2018 GaN power electronics roadmap H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ... Journal of Physics D: Applied Physics 51 (16), 163001, 2018 | 1254 | 2018 |
| InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts andof 370 GHz Y Yue, Z Hu, J Guo, B Sensale-Rodriguez, G Li, R Wang, F Faria, T Fang, ... IEEE Electron Device Letters 33 (7), 988-990, 2012 | 439 | 2012 |
| 300-ghz inaln/gan hemts with ingan back barrier DS Lee, X Gao, S Guo, D Kopp, P Fay, T Palacios IEEE Electron Device Letters 32 (11), 1525-1527, 2011 | 339 | 2011 |
| Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors SS Cheema, N Shanker, LC Wang, CH Hsu, SL Hsu, YH Liao, ... Nature 604 (7904), 65-71, 2022 | 239 | 2022 |
| AlN/GaN insulated-gate HEMTs with 2.3 A/mm output current and 480 mS/mm transconductance T Zimmermann, D Deen, Y Cao, J Simon, P Fay, D Jena, HG Xing IEEE Electron Device Letters 29 (7), 661-664, 2008 | 219 | 2008 |
| 245-GHz InAlN/GaN HEMTs with oxygen plasma treatment DS Lee, JW Chung, H Wang, X Gao, S Guo, P Fay, T Palacios IEEE Electron Device Letters 32 (6), 755-757, 2011 | 204 | 2011 |
| Novel gate-recessed vertical InAs/GaSb TFETs with record high IONof 180 μA/μm at VDS= 0.5 V G Zhou, R Li, T Vasen, M Qi, S Chae, Y Lu, Q Zhang, H Zhu, JM Kuo, ... 2012 International Electron Devices Meeting, 32.6. 1-32.6. 4, 2012 | 182 | 2012 |
| AlGaSb/InAs Tunnel Field-Effect Transistor With On-Current of 78at 0.5 V R Li, Y Lu, G Zhou, Q Liu, SD Chae, T Vasen, WS Hwang, Q Zhang, P Fay, ... IEEE electron device letters 33 (3), 363-365, 2012 | 166 | 2012 |
| Gate-recessed enhancement-mode InAlN/AlN/GaN HEMTs with 1.9-A/mm drain current density and 800-mS/mm transconductance R Wang, P Saunier, X Xing, C Lian, X Gao, S Guo, G Snider, P Fay, ... IEEE electron device letters 31 (12), 1383-1385, 2010 | 166 | 2010 |
| Polarization-induced Zener tunnel junctions in wide-band-gap heterostructures J Simon, Z Zhang, K Goodman, H Xing, T Kosel, P Fay, D Jena Physical review letters 103 (2), 026801, 2009 | 162 | 2009 |
| Thermal infrared detection using dipole antenna-coupled metal-oxide-metal diodes JA Bean, B Tiwari, GH Bernstein, P Fay, W Porod Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009 | 144 | 2009 |
| Performance of AlGaSb/InAs TFETs with gate electric field and tunneling direction aligned Y Lu, G Zhou, R Li, Q Liu, Q Zhang, T Vasen, SD Chae, T Kosel, M Wistey, ... IEEE Electron Device Letters 33 (5), 655-657, 2012 | 143 | 2012 |
| 210-GHz InAlN/GaN HEMTs with dielectric-free passivation R Wang, G Li, O Laboutin, Y Cao, W Johnson, G Snider, P Fay, D Jena, ... IEEE electron device letters 32 (7), 892-894, 2011 | 136 | 2011 |
| Ultrascaled InAlN/GaN high electron mobility transistors with cutoff frequency of 400 GHz Y Yue, Z Hu, J Guo, B Sensale-Rodriguez, G Li, R Wang, F Faria, B Song, ... Japanese Journal of Applied Physics 52 (8S), 08JN14, 2013 | 130 | 2013 |
| Experimental characterization of impact ionization coefficients for electrons and holes in GaN grown on bulk GaN substrates L Cao, J Wang, G Harden, H Ye, R Stillwell, AJ Hoffman, P Fay Applied Physics Letters 112 (26), 2018 | 124 | 2018 |
| Sub-Micron Area Heterojunction Backward Diode Millimeter-Wave Detectors With 0.18 Noise Equivalent Power Z Zhang, R Rajavel, P Deelman, P Fay IEEE microwave and wireless components letters 21 (5), 267-269, 2011 | 121 | 2011 |
| Gate-recessed integrated E/D GaN HEMT technology with fT/fmax >300 GHz ML Schuette, A Ketterson, B Song, E Beam, TM Chou, M Pilla, HQ Tserng, ... IEEE Electron Device Letters 34 (6), 741-743, 2013 | 118 | 2013 |
| Polarization‐engineering in group III‐nitride heterostructures: New opportunities for device design D Jena, J Simon, A Wang, Y Cao, K Goodman, J Verma, S Ganguly, G Li, ... physica status solidi (a) 208 (7), 1511-1516, 2011 | 115 | 2011 |
| Breaking the efficiency barrier for ambient microwave power harvesting with heterojunction backward tunnel diodes CHP Lorenz, S Hemour, W Li, Y Xie, J Gauthier, P Fay, K Wu IEEE Transactions on Microwave Theory and Techniques 63 (12), 4544-4555, 2015 | 111 | 2015 |
| High voltage, high current GaN-on-GaN pn diodes with partially compensated edge termination J Wang, L Cao, J Xie, E Beam, R McCarthy, C Youtsey, P Fay Applied Physics Letters 113 (2), 2018 | 109 | 2018 |
Huili Grace XingProf. of ECE & MSE, Cornell Universityایمیل تأیید شده در cornell.edu
