مقاله‌های دارای تعهدات انتشار عمومی - Christophe Gaquiereبیشتر بدانید
جای دیگری دردسترس نیست: ۱۱
مرور
Modeling and analysis of a broadband Schottky diode noise source up to 325 GHz based on 55-nm SiGe BiCMOS technology‏
H Ghanem, JCA Gonçalves, P Chevalier, I Alaji, W Aouimeur, S Lepilliet, ...‏
IEEE Transactions on Microwave Theory and Techniques 68 (6), 2268-2277, 2020‏
تعهدات: Agence Nationale de la Recherche‏
مرور
SiGe HBT/CMOS process thermal budget co-optimization in a 55-nm CMOS node‏
A Gauthier, P Chevalier, G Avenier, G Ribes, ML Rellier, Y Campidelli, ...‏
2017 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 58-61, 2017‏
تعهدات: European Commission‏
مرور
Breakdown mechanism of AlGaN/GaN HEMT on 200-mm silicon substrate with silicon implant-assisted contacts‏
A Chanuel, Y Gobil, CL Hsu, M Charles, M Coig, J Biscarrat, F Aussenac, ...‏
IEEE Transactions on Electron Devices 69 (10), 5530-5535, 2022‏
تعهدات: European Commission‏
مرور
Coplanar waveguides on BCB measured up to 760 GHz‏
N Zerounian, W Aouimeur, AS Grimault-Jacquin, G Ducournau, ...‏
Journal of Electromagnetic Waves and Applications 35 (15), 2051-2061, 2021‏
تعهدات: Agence Nationale de la Recherche‏
مرور
Design and characterization of (140–220) GHz frequency compensated power detector‏
I Alaji, S Lépilliet, D Gloria, G Ducournau, C Gaquière‏
IEEE Transactions on Microwave Theory and Techniques 69 (4), 2352-2356, 2021‏
تعهدات: European Commission‏
مرور
Indoor real-time passive millimeter wave imager for concealed threats detection‏
E Kpré, N Vellas, C Gaquiere, A Martins, M Dons, M Egret, M Werquin, ...‏
Passive and Active Millimeter-Wave Imaging XXIII 11411, 91-99, 2020‏
تعهدات: European Commission‏
مرور
Noise in terahertz detectors based on semiconductor nanochannels‏
JF Millithaler, I Iñiguez-de-la-Torre, T González, J Mateos, P Sangaré, ...‏
2013 22nd International Conference on Noise and Fluctuations (ICNF), 1-4, 2013‏
تعهدات: Government of Spain‏
مرور
A fully-integrated high-isolation transfer switch for G-band in-situ reflectometer applications‏
W Aouimeur, M Margalef-Rovira, E Lauga-Larroze, D Gloria, C Gaquiere, ...‏
2020 IEEE MTT-S International Conference on Microwaves for Intelligent …, 2020‏
تعهدات: Agence Nationale de la Recherche‏
مرور
InAlGaN-based HEMT with very low Ohmic contact resistance regrown at 850° C by MOVPE‏
C Pitaval, S Aroulanda, Y Fouzi, N Defrance, C Lacam, N Michel, ...‏
Applied Physics Letters 125 (1), 2024‏
تعهدات: European Commission‏
مرور
200 GHz communication system using unipolar InAs THz rectifiers‏
G Ducournau, A Westlund, P Sangare, C Gaquière, PA Nilsson, ...‏
2013 38th International Conference on Infrared, Millimeter, and Terahertz …, 2013‏
تعهدات: Government of Spain‏
مرور
Improvements of High Performance 2‐nm‐thin InAlN/AlN Barrier Devices by Interface Engineering‏
C Ostermaier, G Pozzovivo, JF Carlin, B Basnar, W Schrenk, AM Andrews, ...‏
AIP Conference Proceedings 1399 (1), 905-906, 2011‏
تعهدات: Hungarian Scientific Research Fund‏
جای دیگری دردسترس است: ۳۹
مرور
Diamond overgrown InAlN/GaN HEMT‏
M Alomari, M Dipalo, S Rossi, MA Diforte-Poisson, S Delage, JF Carlin, ...‏
Diamond and Related Materials 20 (4), 604-608, 2011‏
تعهدات: Hungarian Scientific Research Fund‏
مرور
Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels‏
P Sangaré, G Ducournau, B Grimbert, V Brandli, M Faucher, C Gaquière, ...‏
Journal of Applied Physics 113 (3), 2013‏
تعهدات: Government of Spain‏
مرور
Searching for THz Gunn oscillations in GaN planar nanodiodes‏
A Iniguez-De-La-Torre, I Íñiguez-De-La-Torre, J Mateos, T González, ...‏
Journal of Applied Physics 111 (11), 2012‏
تعهدات: Government of Spain‏
مرور
Room temperature direct and heterodyne detection of 0.28–0.69-THz waves based on GaN 2-DEG unipolar nanochannels‏
C Daher, J Torres, I Iñiguez-De-La-Torre, P Nouvel, L Varani, P Sangaré, ...‏
IEEE Transactions on Electron Devices 63 (1), 353-359, 2015‏
تعهدات: European Commission, Government of Spain‏
مرور
Optimized V-shape design of GaN nanodiodes for the generation of Gunn oscillations‏
JF Millithaler, I Íñiguez-de-la-Torre, A Iñiguez-de-la-Torre, T González, ...‏
Applied Physics Letters 104 (7), 2014‏
تعهدات: Government of Spain‏
مرور
Millimeter-wave noise source development on SiGe BiCMOS 55-nm technology for applications up to 260 GHz‏
JCA Gonçalves, H Ghanem, S Bouvot, D Gloria, S Lépilliet, G Ducournau, ...‏
IEEE Transactions on Microwave Theory and Techniques 67 (9), 3732-3742, 2019‏
تعهدات: German Research Foundation, Agence Nationale de la Recherche‏
مرور
Nonlinear nanochannels for room temperature terahertz heterodyne detection‏
J Torres, P Nouvel, A Penot, L Varani, P Sangaré, B Grimbert, M Faucher, ...‏
Semiconductor science and technology 28 (12), 125024, 2013‏
تعهدات: Government of Spain‏
مرور
Thermal oxidation of lattice matched InAlN/GaN heterostructures‏
M Alomari, A Chuvilin, L Toth, B Pecz, JF Carlin, N Grandjean, ...‏
physica status solidi c 7 (1), 13-16, 2010‏
تعهدات: Hungarian Scientific Research Fund‏
مرور
GaN nanodiode arrays with improved design for zero-bias sub-THz detection‏
H Sánchez-Martín, S Sánchez-Martín, I Íñiguez-De-La-Torre, S Pérez, ...‏
Semiconductor Science and Technology 33 (9), 095016, 2018‏
تعهدات: Government of Spain‏
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