| Low-power high-performance non-volatile memory on a flexible substrate with excellent endurance CH Cheng, FS Yeh, A Chin Advanced Materials 23 (7), 902-+, 2011 | 156 | 2011 |
| Low-leakage-current DRAM-like memory using a one-transistor ferroelectric MOSFET with a Hf-based gate dielectric CH Cheng, A Chin IEEE electron device letters 35 (1), 138-140, 2013 | 152 | 2013 |
| Low-Voltage Steep Turn-On pMOSFET Using Ferroelectric High- Gate Dielectric CH Cheng, A Chin IEEE Electron Device Letters 35 (2), 274-276, 2014 | 136 | 2014 |
| A Flexible IGZO Thin-Film Transistor With Stacked-Based Dielectrics Fabricated at Room Temperature HH Hsu, CY Chang, CH Cheng IEEE Electron Device Letters 34 (6), 768-770, 2013 | 130 | 2013 |
| High performance ultra-low energy RRAM with good retention and endurance CH Cheng, CY Tsai, A Chin, FS Yeh 2010 International Electron Devices Meeting, 19.4. 1-19.4. 4, 2010 | 93 | 2010 |
| Novel ultra-low power RRAM with good endurance and retention CH Cheng, A Chin, FS Yeh 2010 Symposium on VLSI Technology, 85-86, 2010 | 92 | 2010 |
| Mechanism of GeO2 resistive switching based on the multi-phonon assisted tunneling between traps AV Shaposhnikov, TV Perevalov, VA Gritsenko, CH Cheng, A Chin Applied Physics Letters 100 (24), 2012 | 91 | 2012 |
| High Density and Low Leakage Current inMIM Capacitors Processed at 300 CH Cheng, SH Lin, KY Jhou, WJ Chen, CP Chou, FS Yeh, J Hu, M Hwang, ... IEEE electron device letters 29 (8), 845-847, 2008 | 79 | 2008 |
| Progress and challenges in p-type oxide-based thin film transistors ZW Shang, HH Hsu, ZW Zheng, CH Cheng Nanotechnology Reviews 8 (1), 422-443, 2019 | 75 | 2019 |
| High mobility bilayer metal–oxide thin film transistors using titanium-doped InGaZnO HH Hsu, CY Chang, CH Cheng, SH Chiou, CH Huang IEEE electron device letters 35 (1), 87-89, 2013 | 67 | 2013 |
| Origin of traps and charge transport mechanism in hafnia DR Islamov, VA Gritsenko, CH Cheng, A Chin Applied Physics Letters 105 (22), 2014 | 64 | 2014 |
| High-temperature leakage improvement in metal–insulator–metal capacitors by work–function tuning KC Chiang, CH Cheng, HC Pan, CN Hsiao, CP Chou, A Chin, HL Hwang IEEE electron device letters 28 (3), 235-237, 2007 | 60 | 2007 |
| Improved high-temperature leakage in high-density MIM capacitors by using a TiLaO dielectric and an Ir electrode CH Cheng, HC Pan, HJ Yang, CN Hsiao, CP Chou, SP McAlister, A Chin IEEE Electron Device Letters 28 (12), 1095, 2007 | 58 | 2007 |
| Energy-efficient HfAlOx NCFET: Using gate strain and defect passivation to realize nearly hysteresis-free sub-25mV/dec switch with ultralow leakage CC Fan, CH Cheng, YR Chen, C Liu, CY Chang 2017 IEEE International Electron Devices Meeting (IEDM), 23.2. 1-23.2. 4, 2017 | 56 | 2017 |
| Low power 1T DRAM/NVM versatile memory featuring steep sub-60-mV/decade operation, fast 20-ns speed, and robust 85°C-extrapolated 1016 endurance YC Chiu, CH Cheng, CY Chang, MH Lee, HH Hsu, SS Yen 2015 Symposium on VLSI Technology (VLSI Technology), T184-T185, 2015 | 56 | 2015 |
| RRAM on Flexible Substrate With Excellent Resistance Distribution KI Chou, CH Cheng, ZW Zheng, M Liu, A Chin IEEE electron device letters 34 (4), 505-507, 2013 | 53 | 2013 |
| Ultralow Switching Energy Ni//HfON/TaN RRAM CH Cheng, A Chin, FS Yeh IEEE electron device letters 32 (3), 366-368, 2011 | 53 | 2011 |
| Charge transport in amorphous Hf0. 5Zr0. 5O2 DR Islamov, TV Perevalov, VA Gritsenko, CH Cheng, A Chin Applied Physics Letters 106 (10), 2015 | 45 | 2015 |
| Long-Endurance Nanocrystal Resistive Memory Using a TaON Buffer Layer CH Cheng, PC Chen, YH Wu, FS Yeh, A Chin IEEE electron device letters 32 (12), 1749-1751, 2011 | 44 | 2011 |
| Influence of plasma fluorination on p-type channel tin-oxide thin film transistors PC Chen, YC Chiu, ZW Zheng, CH Cheng, YH Wu Journal of Alloys and Compounds 707, 162-166, 2017 | 42 | 2017 |
Hsiao-Hsuan HsuNational Taipei University of Technologyایمیل تأیید شده در mail.ntut.edu.tw