مقاله‌های دارای تعهدات انتشار عمومی - Yannick Raffelبیشتر بدانید
جای دیگری دردسترس نیست: ۹
مرور
Influence of microstructure on the variability and current percolation paths in ferroelectric hafnium oxide based neuromorphic FeFET synapses‏
M Lederer, F Muller, A Varanasi, R Olivo, K Mertens, D Lehninger, ...‏
2021 Silicon Nanoelectronics Workshop (SNW), 1-2, 2021‏
تعهدات: European Commission‏
مرور
Impact of channel implant variation on RTN and Flicker noise‏
Y Raffel, K Seidel, L Pirro, S Lehmann, R Hoffmann, R Olivo, T Kämpfe, ...‏
2020 Joint International EUROSOI Workshop and International Conference on …, 2020‏
تعهدات: Federal Ministry of Education and Research, Germany‏
مرور
Hafnium oxide-based Ferroelectric Memories: Are we ready for Application?‏
K Seidel, D Lehninger, F Müller, Y Raffel, A Sünbül, R Revello, RHS De, ...‏
2023 IEEE International Memory Workshop (IMW), 1-4, 2023‏
تعهدات: European Commission‏
مرور
Three level charge pumping on dielectric hafnium oxide gate‏
Y Raffel, M Drescher, R Olivo, M Lederer, R Hoffmann, L Pirro, T Chohan, ...‏
2022 IEEE International Integrated Reliability Workshop (IIRW), 1-4, 2022‏
تعهدات: Federal Ministry of Education and Research, Germany‏
مرور
Impact of temperature on reliability of mfis hzo-based ferroelectric tunnel junctions‏
A Sünbül, T Ali, R Hoffmann, R Revello, Y Raffel, P Duhan, D Lehninger, ...‏
2022 IEEE International Reliability Physics Symposium (IRPS), P11-1-P11-5, 2022‏
تعهدات: European Commission‏
مرور
Reconfigurable ferroelectric hafnium oxide FeFET fabricated in 28 nm CMOS technology for mmWave applications‏
S Abdulazhanov, QH Le, DK Huynh, M Lederer, Y Raffel, K Ni, X Yin, ...‏
ESSDERC 2023-IEEE 53rd European Solid-State Device Research Conference …, 2023‏
تعهدات: European Commission‏
مرور
Dopant-Dependent Flicker Noise of Hafnium Oxide Ferroelectric Field Effect Transistor‏
D Hessler, R Olivo, K Seidel, R Hoffmann, S De, Y Raffel‏
2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2024‏
تعهدات: Federal Ministry of Education and Research, Germany‏
مرور
Low-Frequency Noise Sources and Back-Gate Coupling Effects in FDX-SOI Device‏
N Yadav, Y Raffel, RR Olivo, L Pirro, T Kämpfe, K Seidel‏
2023 IEEE International Integrated Reliability Workshop (IIRW), 1-4, 2023‏
تعهدات: European Commission‏
مرور
Spike-Time Dependent Plasticity in HfO₂-Based Ferroelectric FET Synapses‏
SM Rana, S Roy, M Lederer, Y Raffel, L Pirro, T Chohan, K Seidel, S De, ...‏
2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2024‏
تعهدات: Department of Science & Technology, India, Federal Ministry of Education and …‏
جای دیگری دردسترس است: ۱۱
مرور
Read-optimized 28nm hkmg multibit fefet synapses for inference-engine applications‏
S De, F Müller, HH Le, M Lederer, Y Raffel, T Ali, D Lu, T Kämpfe‏
IEEE Journal of the Electron Devices Society 10, 637-641, 2022‏
تعهدات: European Commission‏
مرور
Synergistic Approach of Interfacial Layer Engineering and READ-Voltage Optimization in HfO2-Based FeFETs for In-Memory-Computing Applications‏
Y Raffel, S De, M Lederer, RR Olivo, R Hoffmann, S Thunder, L Pirro, ...‏
ACS Applied Electronic Materials 4 (11), 5292-5300, 2022‏
تعهدات: European Commission‏
مرور
Interfacial layer engineering to enhance noise immunity of fefets for imc applications‏
Y Raffel, S Thunder, M Lederer, R Olivo, R Hoffmann, L Pirro, S Beyer, ...‏
2022 International Conference on IC Design and Technology (ICICDT), 8-11, 2022‏
تعهدات: European Commission‏
مرور
Low-Power Vertically Stacked One Time Programmable Multibit IGZO-Based BEOL Compatible Ferroelectric TFT Memory Devices with Lifelong Retention for Monolithic 3D-Inference …‏
S De, S Thunder, D Lehninger, MPM Jank, M Lederer, Y Raffel, K Seidel, ...‏
Embedded Artificial Intelligence, 37-43, 2023‏
تعهدات: European Commission‏
مرور
28 nm high-k-metal gate ferroelectric field effect transistors based synapses-a comprehensive overview‏
Y Raffel, F Müller, S Thunder, MR Sk, M Lederer, L Pirro, S Beyer, ...‏
Memories-Materials, Devices, Circuits and Systems, 100048, 2023‏
تعهدات: European Commission‏
مرور
Importance of temperature dependence of interface traps in high-k metal gate stacks for silicon spin-qubit development‏
Y Raffel, R Olivo, M Simon, L Vieler, R Hoffmann, S De, T Kämpfe, ...‏
Applied Physics Letters 123 (3), 2023‏
تعهدات: Federal Ministry of Education and Research, Germany‏
مرور
Gate-stack engineered IGZO-based multi-bit OTP FeTFT with lifelong retention for inference engine applications‏
S De, S Thunder, D Lehninger, HH Le, Y Raffel, M Lederer, F Müller, ...‏
TechRxiv. Preprint. https://doi. org/10.36227/techrxiv 19491221, v2, 2022‏
تعهدات: Fraunhofer-Gesellschaft‏
مرور
Ferroelectric Field Effect Transistors–Based Content‐Addressable Storage‐Class Memory: A Study on the Impact of Device Variation and High‐Temperature Compatibility‏
A Sunil, M Rana SK, M Lederer, Y Raffel, F Müller, R Olivo, R Hoffmann, ...‏
Advanced Intelligent Systems 6 (4), 2300461, 2024‏
تعهدات: European Commission‏
مرور
An experimental comparison of interface trap density in hafnium oxide-based FeFETs‏
C Woo, Y Raffel, R Olivo, K Seidel, A Gurlo‏
Memories-Materials, Devices, Circuits and Systems 6, 100091, 2023‏
تعهدات: European Commission‏
مرور
FeFET-Based Content-Addressable Storage Class Memory: Device Variation and High-Temperature Compatibility‏
A Sunil, MSK Rana, M Lederer, Y Raffel, F Müller, R Olivo, R Hoffmann, ...‏
Authorea Preprints, 2023‏
تعهدات: European Commission‏
مرور
Impact of High-K Deposition Process on the Noise Immunity of FeFETs and their Applicability Towards In-Memory-Computing‏
Y Raffel, R Olivo, M Lederer, L Pirro, V Parmar, T Chohan, D Lehninger, ...‏
2023 IEEE International Integrated Reliability Workshop (IIRW), 1-4, 2023‏
تعهدات: European Commission‏
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