| A highly linear temperature sensor using GaN-on-SiC heterojunction diode for high power applications S Madhusoodhanan, S Sandoval, Y Zhao, ME Ware, Z Chen IEEE Electron Device Letters 38 (8), 1105-1108, 2017 | 45 | 2017 |
| High temperature and power dependent photoluminescence analysis on commercial lighting and display LED materials for future power electronic modules A Sabbar, S Madhusoodhanan, S Al-Kabi, B Dong, J Wang, S Atcitty, ... Scientific Reports 9 (1), 16758, 2019 | 19 | 2019 |
| High-temperature analysis of GaN-based MQW photodetector for optical galvanic isolations in high-density integrated power modules S Madhusoodhanan, A Sabbar, H Tran, B Dong, J Wang, A Mantooth, ... IEEE Journal of Emerging and Selected Topics in Power Electronics 9 (4 …, 2020 | 14 | 2020 |
| High-temperature analysis of GaN-Based Blue-LEDs for future power electronic applications S Madhusoodhanan, A Sabbar, S Atcitty, RJ Kaplar, HA Mantooth, SQ Yu, ... IEEE Journal of Emerging and Selected Topics in Power Electronics 8 (4 …, 2019 | 14 | 2019 |
| High-temperature analysis of optical coupling using AlGaAs/GaAs LEDs for high-density integrated power modules S Madhusoodhanan, A Sabbar, H Tran, P Lai, D Gonzalez, A Mantooth, ... Scientific Reports 12 (1), 3168, 2022 | 13 | 2022 |
| Systematic investigation of spontaneous emission quantum efficiency drop up to 800 K for future power electronics applications A Sabbar, S Madhusoodhanan, S Al-Kabi, B Dong, J Wang, S Atcitty, ... IEEE Journal of Emerging and Selected Topics in Power Electronics 8 (1), 845-853, 2018 | 12 | 2018 |
| Highly linear temperature sensor using GaN-on-SiC heterojunction diode for Harsh environment applications S Madhusoodhanan, S Koukourinkova, T White, Z Chen, Y Zhao, ... 2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2016 | 10 | 2016 |
| Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications P Lai, D Gonzalez, S Madhusoodhanan, A Sabbar, S Ahmed, B Dong, ... Scientific Reports 12 (1), 11685, 2022 | 9 | 2022 |
| High‐Temperature Optical Characterization of GaN‐Based Light‐Emitting Diodes for Future Power Electronic Modules S Madhusoodhanan, A Sabbar, S Atcitty, R Kaplar, A Mantooth, SQ Yu, ... physica status solidi (a) 217 (7), 1900792, 2020 | 8 | 2020 |
| Design and optimization of high temperature optocouplers as galvanic isolation A Sabbar, S Madhusoodhanan, H Tran, B Dong, J Wang, A Mantooth, ... Scientific reports 12 (1), 2228, 2022 | 5 | 2022 |
| High-temperature spontaneous emission quantum efficiency analysis of different InGaN MQWs for future power electronics applications A Sabbar, S Madhusoodhanan, B Dong, J Wang, HA Mantooth, SQ Yu, ... IEEE Journal of Emerging and Selected Topics in Power Electronics 9 (2 …, 2020 | 4 | 2020 |
| High-Temperature Optical Characterization of Wide Band Gap Light Emitting Diodes and Photodiodes for Future Power Module Application S Madhusoodhanan, A Sabbar, S Al-Kabi, S Atcitty, R Kaplar, B Dong, ... Adv. Sci. Technol. Eng. Syst. J 4, 17-22, 2019 | 3 | 2019 |
| Investigation of High Temperature Photoluminescence Efficiency from InGaN/GaN MQWs A Sabbar, S Madhusoodhanan, S Al-Kabi, B Dong, J Wang, SQ Yu, ... CLEO: Science and Innovations, JTh2A. 79, 2018 | 3 | 2018 |
| Analysis of gate-coupled silicon controlled rectifier on HBM protection under voltage overshoot S Madhusoodhanan, R Sankaralingam, G Boselli, Z Chen Journal of Electrostatics 102, 103394, 2019 | 2 | 2019 |
| High Temperature Photoluminsence of InGaN-Based MQWs on Patterned Sapphire Substrates A Sabbar, S Madhusoodhanan, S Al-Kabi, B Dong, J Wang, S Atcitty, ... 2018 IEEE Photonics Conference (IPC), 1-2, 2018 | 1 | 2018 |
| High-temperature power module integrated with an optically galvanic isolated gate driver Z Chen, A Mantooth, SQ Yu, D Gonzalez, P Lai, S Madhusoodhanan US Patent App. 17/968,387, 2023 | | 2023 |
| High temperature optoelectronic devices for power electronics Z Chen, SQ Yu, HA Mantooth, A Wallace, S Madhusoodhanan US Patent 11,329,209, 2022 | | 2022 |
| High-Temperature Optical Characterization of GaN-Based LEDs for Future Power Electronic Modules. S Madhusoodhanan, A Sabbar, S Atcitty, R Kaplar, A Mantooth, SQ Yu, ... Sandia National Lab.(SNL-NM), Albuquerque, NM (United States), 2021 | | 2021 |
| Investigation of High Temperature LED and Photodetector from InGaN/GaN MQWs A Sabbar, S Madhusoodhanan, H Tran, B Dong, J Wang, A Mantooth, ... CLEO: Science and Innovations, JTh2D. 16, 2020 | | 2020 |
| High-Temperature Optoelectronic Device Characterization and Integration Towards Optical Isolation for High-Density Power Modules S Madhusoodhanan University of Arkansas, 2020 | | 2020 |