| High Linearity and High Gain Performance of N-Polar GaN MIS-HEMT at 30 GHz P Shrestha, M Guidry, B Romanczyk, N Hatui, C Wurm, A Krishna, ... IEEE Electron Device Letters 41 (5), 681-684, 2020 | 79 | 2020 |
| Improved N-polar GaN mm-wave Linearity, Efficiency, and Noise M Guidry, P Shrestha, W Liu, B Romanczyk, N Hatui, C Wurm, R Karnaty, ... 2022 IEEE/MTT-S International Microwave Symposium-IMS 2022, 291-294, 2022 | 10 | 2022 |
| A Novel Concept using Derivative Superposition at the Device-Level to Reduce Linearity Sensitivity to Bias in N-polar GaN MISHEMT P Shrestha, M Guidry, B Romanczyk, RR Karnaty, N Hatui, C Wurm, ... 2020 Device Research Conference (DRC), 1-2, 2020 | 10 | 2020 |
| Virtual-Source Modeling of N-polar GaN MISHEMTS RR Karnaty, M Guidry, P Shrestha, B Romanczyk, N Hatui, X Zheng, ... 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and …, 2019 | 5 | 2019 |
| Compact Modeling of N-Polar GaN HEMTs for Intermodulation Distortion in Millimeter-Wave Bands RR Karnaty, P Shrestha, M Guidry, B Romanczyk, UK Mishra, ... IEEE Transactions on Microwave Theory and Techniques 71 (5), 1932-1944, 2023 | 4 | 2023 |
| Reconfigurable Millimeter-wave Power Amplifiers in GaN and SOI using Passive Load Modulation RR Karnaty, SM Chang, JF Buckwalter 2022 IEEE/MTT-S International Microwave Symposium-IMS 2022, 990-993, 2022 | 2 | 2022 |
| Novel approach to controlling linearity in n-polar gan mishemts B Romanczyk, UK Mishra, P Shrestha, M Guidry, J Buckwalter, S Keller, ... US Patent App. 17/353,665, 2021 | 1 | 2021 |
| Millimeter Wave GaN Device Modeling and Circuit Design RR Karnaty UC Santa Barbara, 2024 | | 2024 |
| Modeling and Measurement of Dual-Threshold N-polar GaN HEMTS for High-Linearity RF Applications RR Karnaty, P Shrestha, M Guidry, B Romanczyk, UK Mishra, ... 2023 IEEE/MTT-S International Microwave Symposium-IMS 2023, 20-23, 2023 | | 2023 |
