| Waveguide-integrated black phosphorus photodetector for mid-infrared applications L Huang, B Dong, X Guo, Y Chang, N Chen, X Huang, W Liao, C Zhu, ... ACS nano 13 (1), 913-921, 2018 | 228 | 2018 |
| Inorganic, Organic, and Perovskite Halides with Nanotechnology for High–Light Yield X- and γ-ray Scintillators F Maddalena, L Tjahjana, A Xie, Arramel, S Zeng, H Wang, P Coquet, ... Crystals 9 (2), 88, 2019 | 211 | 2019 |
| Ultra-broadband on-chip twisted light emitter for optical communications Z Xie, T Lei, F Li, H Qiu, Z Zhang, H Wang, C Min, L Du, Z Li, X Yuan Light: Science & Applications 7 (4), 18001-18001, 2018 | 188 | 2018 |
| Low-threshold optically pumped lasing in highly strained germanium nanowires S Bao, D Kim, C Onwukaeme, S Gupta, K Saraswat, KH Lee, Y Kim, D Min, ... Nature Communications 8 (1), 1845, 2017 | 178 | 2017 |
| High-speed silicon modulators for the 2 μm wavelength band W Cao, D Hagan, DJ Thomson, M Nedeljkovic, CG Littlejohns, A Knights, ... Optica 5 (9), 1055-1062, 2018 | 169 | 2018 |
| Direct electron-beam writing of continuous spiral phase plates in negative resist with high power efficiency for optical manipulation WC Cheong, WM Lee, XC Yuan, LS Zhang, K Dholakia, H Wang Applied physics letters 85 (23), 5784-5786, 2004 | 120 | 2004 |
| High-speed photo detection at two-micron-wavelength: technology enablement by GeSn/Ge multiple-quantum-well photodiode on 300 mm Si substrate S Xu, W Wang, YC Huang, Y Dong, S Masudy-Panah, H Wang, X Gong, ... Optics express 27 (4), 5798-5813, 2019 | 116 | 2019 |
| Two-micron-wavelength germanium-tin photodiodes with low dark current and gigahertz bandwidth Y Dong, W Wang, S Xu, D Lei, X Gong, X Guo, H Wang, SY Lee, WK Loke, ... Optics express 25 (14), 15818-15827, 2017 | 102 | 2017 |
| Germanium-on-silicon nitride waveguides for mid-infrared integrated photonics W Li, P Anantha, S Bao, KH Lee, X Guo, T Hu, L Zhang, H Wang, R Soref, ... Applied physics letters 109 (24), 2016 | 99 | 2016 |
| Design and fabrication of a double-axicon for generation of tailorable self-imaged three-dimensional intensity voids BPS Ahluwalia, WC Cheong, XC Yuan, LS Zhang, SH Tao, J Bu, H Wang Optics letters 31 (7), 987-989, 2006 | 96 | 2006 |
| Localized emission from laser-irradiated defects in 2D hexagonal boron nitride S Hou, MD Birowosuto, S Umar, MA Anicet, RY Tay, P Coquet, BK Tay, ... 2D Materials 5 (1), 015010, 2017 | 94 | 2017 |
| Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon G Ye, H Wang, S Arulkumaran, GI Ng, R Hofstetter, Y Li, MJ Anand, ... Applied Physics Letters 103 (14), 2013 | 92 | 2013 |
| Direct current and microwave characteristics of sub-micron AlGaN/GaN high-electron-mobility transistors on 8-inch Si (111) substrate S Arulkumaran, GI Ng, S Vicknesh, H Wang, KS Ang, JPY Tan, VK Lin, ... Japanese Journal of Applied Physics 51 (11R), 111001, 2012 | 83 | 2012 |
| Thermal quenching and dose studies of X-ray luminescence in single crystals of halide perovskites A Xie, TH Nguyen, C Hettiarachchi, ME Witkowski, W Drozdowski, ... The Journal of Physical Chemistry C 122 (28), 16265-16273, 2018 | 75 | 2018 |
| Demonstration of submicron-gate AlGaN/GaN high-electron-mobility transistors on silicon with complementary metal–oxide–semiconductor-compatible non-gold metal stack S Arulkumaran, GI Ng, S Vicknesh, H Wang, KS Ang, CM Kumar, KL Teo, ... Applied Physics Express 6 (1), 016501, 2012 | 74 | 2012 |
| High-efficiency normal-incidence vertical pin photodetectors on a germanium-on-insulator platform Y Lin, KH Lee, S Bao, X Guo, H Wang, J Michel, CS Tan Photonics Research 5 (6), 702-709, 2017 | 71 | 2017 |
| Temperature dependent microwave performance of AlGaN/GaN high-electron-mobility transistors on high-resistivity silicon substrate S Arulkumaran, ZH Liu, GI Ng, WC Cheong, R Zeng, J Bu, H Wang, ... Thin Solid Films 515 (10), 4517-4521, 2007 | 70 | 2007 |
| Silicon-on-insulator waveguide devices for broadband mid-infrared photonics B Dong, X Guo, CP Ho, B Li, H Wang, C Lee, X Luo, GQ Lo IEEE Photonics Journal 9 (3), 1-10, 2017 | 68 | 2017 |
| Manipulating Coherent Light–Matter Interaction: Continuous Transition between Strong Coupling and Weak Coupling in MoS2 Monolayer Coupled with Plasmonic … S Hou, LYM Tobing, X Wang, Z Xie, J Yu, J Zhou, D Zhang, C Dang, ... Advanced Optical Materials 7 (22), 1900857, 2019 | 67 | 2019 |
| High-throughput multiple dies-to-wafer bonding technology and III/V-on-Si hybrid lasers for heterogeneous integration of optoelectronic integrated circuits X Luo, Y Cao, J Song, X Hu, Y Cheng, C Li, C Liu, TY Liow, M Yu, H Wang, ... Frontiers in Materials 2, 28, 2015 | 63 | 2015 |
Geok Ing NgNanyang Technological Universityایمیل تأیید شده در ntu.edu.sg
