| Breaking the efficiency barrier for ambient microwave power harvesting with heterojunction backward tunnel diodes CHP Lorenz, S Hemour, W Li, Y Xie, J Gauthier, P Fay, K Wu IEEE Transactions on Microwave Theory and Techniques 63 (12), 4544-4555, 2015 | 111 | 2015 |
| Polarization-engineered III-nitride heterojunction tunnel field-effect transistors W Li, S Sharmin, H Ilatikhameneh, R Rahman, Y Lu, J Wang, X Yan, ... IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 1 …, 2015 | 107 | 2015 |
| GaN nanowire MOSFET with near-ideal subthreshold slope W Li, MD Brubaker, BT Spann, KA Bertness, P Fay IEEE electron device letters 39 (2), 184-187, 2017 | 52 | 2017 |
| Polarization-induced Zener tunnel diodes in GaN/InGaN/GaN heterojunctions X Yan, W Li, SM Islam, K Pourang, HG Xing, P Fay, D Jena Applied Physics Letters 107 (16), 2015 | 44 | 2015 |
| Advanced terahertz sensing and imaging systems based on integrated III-V interband tunneling devices L Liu, SM Rahman, Z Jiang, W Li, P Fay Proceedings of the IEEE 105 (6), 1020-1034, 2017 | 39 | 2017 |
| Universal charge-conserving TFET SPICE model incorporating gate current and noise H Lu, W Li, Y Lu, P Fay, T Ytterdal, A Seabaugh IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 2 …, 2016 | 30 | 2016 |
| Single and multi-fin normally-off Ga W Li, K Nomoto, Z Hu, T Nakamura, D Jena, HG Xing IEDM Tech. Dig, 12, 2019 | 26 | 2019 |
| Steep subthreshold swing tunnel FETs: GaN/InN/GaN and transition metal dichalcogenide channels A Seabaugh, S Fathipour, W Li, H Lu, JH Park, AC Kummel, D Jena, ... 2015 IEEE International Electron Devices Meeting (IEDM), 35.6. 1-35.6. 4, 2015 | 25 | 2015 |
| Metal-organic chemical vapor deposition of high quality, high indium composition N-polar InGaN layers for tunnel devices C Lund, B Romanczyk, M Catalano, Q Wang, W Li, D DiGiovanni, MJ Kim, ... Journal of Applied Physics 121 (18), 2017 | 21 | 2017 |
| Hybrid low‐k spacer scheme for advanced FinFET technology parasitic capacitance reduction M Gu, X Wang, W Li, M Aquilino, J Peng, H Wang, D Jaeger, K Tabakman, ... Electronics Letters 56 (10), 514-516, 2020 | 19 | 2020 |
| Tunnel FET analog benchmarking and circuit design H Lu, P Paletti, W Li, P Fay, T Ytterdal, A Seabaugh IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 4 …, 2018 | 19 | 2018 |
| Performance projection of III‐nitride heterojunction nanowire tunneling field‐effect transistors W Li, L Cao, C Lund, S Keller, P Fay Physica status solidi (a) 213 (4), 905-908, 2016 | 17 | 2016 |
| Overcoming the efficiency limitation of low microwave power harvesting with backward tunnel diodes CHP Lorenz, S Hemour, W Li, Y Xie, J Gauthier, P Fay, K Wu 2015 IEEE MTT-S International Microwave Symposium, 1-4, 2015 | 17 | 2015 |
| Faceted sidewall etching of n-GaN on sapphire by photoelectrochemical wet processing Y Yue, X Yan, W Li, HG Xing, D Jena, P Fay Journal of Vacuum Science & Technology B 32 (6), 2014 | 17 | 2014 |
| Group III-nitride compound heterojunction tunnel field-effect transistors and methods for making the same P Fay, W Li, D Jena US Patent 9,905,647, 2018 | 16 | 2018 |
| Direct electrical observation of plasma wave-related effects in GaN-based two-dimensional electron gases Y Zhao, W Chen, W Li, M Zhu, Y Yue, B Song, J Encomendero, ... Applied Physics Letters 105 (17), 2014 | 15 | 2014 |
| Group III-Nitride compound heterojunction tunnel field-effect transistors and methods for making the same P Fay, L Cao, D Jena, W Li US Patent 9,954,085, 2018 | 12 | 2018 |
| Microwave detection performance of In0.53Ga0.47As/GaAs0.5Sb0.5 quantum‐well tunnel field‐effect transistors W Li, P Fay, T Yu, J Hoyt Electronics Letters 52 (10), 842-844, 2016 | 9 | 2016 |
| IEEE International Electron Devices Meeting (IEDM) A Seabaugh, S Fathipour, W Li, H Lu, JH Park, AC Kummel, D Jena, ... IEEE, Washington, DC, USA, 2015 | 8 | 2015 |
| Single and multi-fin normally-off Ga2O3 vertical transistors with a breakdown voltage over 2.6 kV 2019 IEEE Int W Li, K Nomoto, Z Hu, T Nakamura, D Jena, HG Xing Electron Devices Meeting (IEDM), 12.4, 2019 | 5 | 2019 |
