| Excess avalanche noise in In0. 52Al0. 48As YL Goh, ARJ MARSHALL, DJ Massey, JS Ng, CH Tan, M Hopkinson IEEE journal of quantum electronics 43 (5-6), 503-507, 2007 | 105 | 2007 |
| Temperature dependence of avalanche breakdown in InP and InAlAs LJJ Tan, DSG Ong, JS Ng, CH Tan, SK Jones, Y Qian, JPR David IEEE Journal of Quantum Electronics 46 (8), 1153-1157, 2010 | 99 | 2010 |
| Extremely low excess noise and high sensitivity AlAs0.56Sb0.44 avalanche photodiodes X Yi, S Xie, B Liang, LW Lim, JS Cheong, MC Debnath, DL Huffaker, ... Nature Photonics 13 (10), 683-686, 2019 | 89 | 2019 |
| Electron dominated impact ionization and avalanche gain characteristics in InAs photodiodes ARJ Marshall, CH Tan, MJ Steer, JPR David Applied Physics Letters 93 (11), 2008 | 88 | 2008 |
| Avalanche noise characteristics in submicron InP diodes LJJ Tan, JS Ng, CH Tan, JPR David IEEE Journal of Quantum Electronics 44 (4), 378-382, 2008 | 83 | 2008 |
| Avalanche multiplication in InAlAs YL Goh, DJ Massey, ARJ Marshall, JS Ng, CH Tan, WK Ng, GJ Rees, ... IEEE Transactions on Electron Devices 54 (1), 11-16, 2006 | 82 | 2006 |
| Avalanche noise measurement in thin Si diodes CH Tan, JC Clark, JPR David, GJ Rees, SA Plimmer, RC Tozer, ... Applied Physics Letters 76 (26), 3926-3928, 2000 | 72 | 2000 |
| Material considerations for avalanche photodiodes JPR David, CH Tan IEEE Journal of selected topics in quantum electronics 14 (4), 998-1009, 2008 | 70 | 2008 |
| Impact ionization in InAs electron avalanche photodiodes ARJ Marshall, JPR David, CH Tan IEEE Transactions on Electron Devices 57 (10), 2631-2638, 2010 | 68 | 2010 |
| Extremely low excess noise in InAs electron avalanche photodiodes ARJ Marshall, CH Tan, MJ Steer, JPR David IEEE Photonics Technology Letters 21 (13), 866-868, 2009 | 64 | 2009 |
| Field dependence of impact ionization coefficients in In/sub 0.53/Ga/sub 0.47/As JS Ng, CH Tan, JPR David, G Hill, GJ Rees IEEE Transactions on Electron Devices 50 (4), 901-905, 2003 | 64 | 2003 |
| Temperature dependence of leakage current in InAs avalanche photodiodes PJ Ker, ARJ Marshall, AB Krysa, JPR David, CH Tan IEEE Journal of quantum electronics 47 (8), 1123-1128, 2011 | 60 | 2011 |
| Excess noise measurement in avalanche photodiodes using a transimpedance amplifier front-end KS Lau, CH Tan, BK Ng, KF Li, RC Tozer, JPR David, GJ Rees Measurement science and technology 17 (7), 1941, 2006 | 58 | 2006 |
| Effect of dead space on avalanche speed [APDs] JS Ng, CH Tan, BK Ng, PJ Hambleton, JPR David, GJ Rees, AH You, ... IEEE Transactions on Electron Devices 49 (4), 544-549, 2002 | 58 | 2002 |
| InAs thermophotovoltaic cells with high quantum efficiency for waste heat recovery applications below 1000 C Q Lu, X Zhou, A Krysa, A Marshall, P Carrington, CH Tan, A Krier Solar Energy Materials and Solar Cells 179, 334-338, 2018 | 56 | 2018 |
| Low multiplication noise thin Al/sub 0.6/Ga/sub 0.4/As avalanche photodiodes CH Tan, JPR David, SA Plimmer, GJ Rees, RC Tozer, R Grey IEEE Transactions on Electron Devices 48 (7), 1310-1317, 2001 | 56 | 2001 |
| Single-photon detection for long-range imaging and sensing RH Hadfield, J Leach, F Fleming, DJ Paul, CH Tan, JS Ng, RK Henderson, ... Optica 10 (9), 1124-1141, 2023 | 55 | 2023 |
| Demonstration of InAsBi photoresponse beyond 3.5 μm IC Sandall, F Bastiman, B White, R Richards, D Mendes, JPR David, ... Applied Physics Letters 104 (17), 2014 | 55 | 2014 |
| High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit ARJ Marshall, PJ Ker, A Krysa, JPR David, CH Tan Optics express 19 (23), 23341-23349, 2011 | 55 | 2011 |
| InGaAs/AlGaAsSb avalanche photodiode with high gain-bandwidth product S Xie, X Zhou, S Zhang, DJ Thomson, X Chen, GT Reed, JS Ng, CH Tan Optics express 24 (21), 24242-24247, 2016 | 51 | 2016 |