| Proton-induced dehydrogenation of defects in AlGaN/GaN HEMTs J Chen, YS Puzyrev, CX Zhang, EX Zhang, MW McCurdy, DM Fleetwood, ... IEEE Transactions on Nuclear Science 60 (6), 4080-4086, 2013 | 121 | 2013 |
| Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-nm MOSFETs Irradiated to Ultrahigh Doses F Faccio, G Borghello, E Lerario, DM Fleetwood, RD Schrimpf, H Gong, ... IEEE Transactions on Nuclear Science 65 (1), 164-174, 2017 | 118 | 2017 |
| Effects of applied bias and high field stress on the radiation response of GaN/AlGaN HEMTs J Chen, YS Puzyrev, R Jiang, EX Zhang, MW McCurdy, DM Fleetwood, ... IEEE Transactions on Nuclear Science 62 (6), 2423-2430, 2015 | 113 | 2015 |
| Process dependence of proton-induced degradation in GaN HEMTs T Roy, EX Zhang, YS Puzyrev, DM Fleetwood, RD Schrimpf, BK Choi, ... IEEE Transactions on Nuclear Science 57 (6), 3060-3065, 2010 | 111 | 2010 |
| Fin-width dependence of ionizing radiation-induced subthreshold-swing degradation in 100-nm-gate-length FinFETs F El Mamouni, EX Zhang, RD Schrimpf, DM Fleetwood, RA Reed, ... IEEE Transactions on Nuclear Science 56 (6), 3250-3255, 2009 | 109 | 2009 |
| Radiation-induced defect evolution and electrical degradation of AlGaN/GaN high-electron-mobility transistors YS Puzyrev, T Roy, EX Zhang, DM Fleetwood, RD Schrimpf, ... IEEE Transactions on Nuclear Science 58 (6), 2918-2924, 2011 | 96 | 2011 |
| Laser-and heavy ion-induced charge collection in bulk FinFETs F El-Mamouni, EX Zhang, ND Pate, N Hooten, RD Schrimpf, RA Reed, ... IEEE Transactions on Nuclear Science 58 (6), 2563-2569, 2011 | 90 | 2011 |
| Analysis of TID process, geometry, and bias condition dependence in 14-nm FinFETs and implications for RF and SRAM performance MP King, X Wu, M Eller, S Samavedam, MR Shaneyfelt, AI Silva, ... IEEE Transactions on Nuclear Science 64 (1), 285-292, 2016 | 82 | 2016 |
| Bias dependence of total ionizing dose effects in SiGe-MOS FinFETs GX Duan, CX Zhang, EX Zhang, J Hachtel, DM Fleetwood, RD Schrimpf, ... IEEE Transactions on Nuclear Science 61 (6), 2834-2838, 2014 | 82 | 2014 |
| Geometry dependence of total-dose effects in bulk FinFETs I Chatterjee, EX Zhang, BL Bhuva, RA Reed, ML Alles, NN Mahatme, ... IEEE Transactions on Nuclear Science 61 (6), 2951-2958, 2014 | 78 | 2014 |
| Impact of proton irradiation on deep level states in n-GaN Z Zhang, AR Arehart, E Cinkilic, J Chen, EX Zhang, DM Fleetwood, ... Applied Physics Letters 103 (4), 2013 | 77 | 2013 |
| Low-energy X-ray and ozone-exposure induced defect formation in graphene materials and devices EX Zhang, AKM Newaz, B Wang, S Bhandaru, CX Zhang, DM Fleetwood, ... IEEE transactions on nuclear science 58 (6), 2961-2967, 2011 | 75 | 2011 |
| Total-ionizing-dose radiation effects in AlGaN/GaN HEMTs and MOS-HEMTs X Sun, OI Saadat, J Chen, EX Zhang, S Cui, T Palacios, DM Fleetwood, ... IEEE Transactions on Nuclear Science 60 (6), 4074-4079, 2013 | 74 | 2013 |
| Effects of proton-induced displacement damage on gallium nitride HEMTs in RF power amplifier applications NE Ives, J Chen, AF Witulski, RD Schrimpf, DM Fleetwood, RW Bruce, ... IEEE Transactions on Nuclear Science 62 (6), 2417-2422, 2015 | 70 | 2015 |
| The Impact of X-Ray and Proton Irradiation on -Based Bipolar Resistive Memories JS Bi, ZS Han, EX Zhang, MW McCurdy, RA Reed, RD Schrimpf, ... IEEE Transactions on Nuclear Science 60 (6), 4540-4546, 2013 | 68 | 2013 |
| Charge Trapping in Al2O3/-Ga2O3-Based MOS Capacitors MA Bhuiyan, H Zhou, R Jiang, EX Zhang, DM Fleetwood, DY Peide, ... IEEE Electron Device Letters 39 (7), 1022-1025, 2018 | 67 | 2018 |
| Temperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors T Roy, EX Zhang, YS Puzyrev, X Shen, DM Fleetwood, RD Schrimpf, ... Applied Physics Letters 99 (20), 2011 | 66 | 2011 |
| Effectiveness of SEL hardening strategies and the latchup domino effect NA Dodds, NC Hooten, RA Reed, RD Schrimpf, JH Warner, NJH Roche, ... IEEE Transactions on Nuclear Science 59 (6), 2642-2650, 2012 | 65 | 2012 |
| Total ionizing dose radiation effects on 14 nm FinFET and SOI UTBB technologies H Hughes, P McMarr, M Alles, E Zhang, C Arutt, B Doris, D Liu, ... 2015 IEEE Radiation Effects Data Workshop (REDW), 1-6, 2015 | 64 | 2015 |
| Multiple defects cause degradation after high field stress in AlGaN/GaN HEMTs R Jiang, X Shen, J Fang, P Wang, EX Zhang, J Chen, DM Fleetwood, ... IEEE Transactions on Device and Materials Reliability 18 (3), 364-376, 2018 | 63 | 2018 |
Daniel M. FleetwoodProfessor of Electrical Engineering, Vanderbilt Universityایمیل تأیید شده در vanderbilt.edu