| Scaling hetero-epitaxy from layers to three-dimensional crystals CV Falub, H von Känel, F Isa, R Bergamaschini, A Marzegalli, ... Science 335 (6074), 1330-1334, 2012 | 207 | 2012 |
| Direct-Gap Gain and Optical Absorption in Germanium Correlated to the Density<? format?> of Photoexcited Carriers, Doping, and Strain L Carroll, P Friedli, S Neuenschwander, H Sigg, S Cecchi, F Isa, ... Physical review letters 109 (5), 057402, 2012 | 125 | 2012 |
| Unexpected dominance of vertical dislocations in high-misfit Ge/Si (001) films and their elimination by deep substrate patterning A Marzegalli, F Isa, H Groiss, E Müller, CV Falub, AG Taboada, ... Adv. Mater 25 (32), 4408-4412, 2013 | 65 | 2013 |
| Self-aligned Ge and SiGe three-dimensional epitaxy on dense Si pillar arrays R Bergamaschini, F Isa, CV Falub, P Niedermann, E Müller, G Isella, ... Surface science reports 68 (3-4), 390-417, 2013 | 53 | 2013 |
| Highly Mismatched, Dislocation‐Free SiGe/Si Heterostructures F Isa, M Salvalaglio, YAR Dasilva, M Meduňa, M Barget, A Jung, ... Advanced Materials 28, 884-888, 2016 | 48 | 2016 |
| Ge crystals on Si show their light F Pezzoli, F Isa, G Isella, CV Falub, T Kreiliger, M Salvalaglio, ... Physical Review Applied 1 (4), 044005, 2014 | 43 | 2014 |
| Perfect crystals grown from imperfect interfaces CV Falub, M Meduňa, D Chrastina, F Isa, A Marzegalli, T Kreiliger, ... Scientific reports 3 (1), 2276, 2013 | 43 | 2013 |
| GaAs/Ge crystals grown on Si substrates patterned down to the micron scale A Gonzalez Taboada, M Meduňa, M Salvalaglio, F Isa, T Kreiliger, ... Journal of Applied Physics 119, 055301, 2016 | 35 | 2016 |
| Application of plasma-printed paper-based SERS substrate for cocaine detection R Alder, J Hong, E Chow, J Fang, F Isa, B Ashford, C Comte, A Bendavid, ... Sensors 21 (3), 810, 2021 | 33 | 2021 |
| Engineered coalescence by annealing 3D Ge microstructures into high-quality suspended layers on Si M Salvalaglio, R Bergamaschini, F Isa, A Scaccabarozzi, G Isella, ... ACS applied materials & interfaces 7 (34), 19219-19225, 2015 | 31 | 2015 |
| Strain relaxation of GaAs/Ge crystals on patterned Si substrates AG Taboada, T Kreiliger, CV Falub, F Isa, M Salvalaglio, L Wewior, ... Applied Physics Letters 104 (2), 2014 | 27 | 2014 |
| Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates F Pezzoli, A Giorgioni, K Gallacher, F Isa, P Biagioni, RW Millar, E Gatti, ... Applied Physics Letters 108, 262103, 2016 | 26 | 2016 |
| Dislocation-Free SiGe/Si Heterostructures F Montalenti, F Rovaris, R Bergamaschini, L Miglio, M Salvalaglio, ... Crystals 8, 257, 2018 | 25 | 2018 |
| p-type Epitaxial Graphene on Cubic Silicon Carbide on Silicon for Integrated Silicon Technologies A Pradeepkumar, M Amjadipour, N Mishra, C Liu, MS Fuhrer, A Bendavid, ... ACS Applied Nano Materials 3, 830, 2019 | 24 | 2019 |
| Investigation of interface abruptness and In content in (In, Ga) N/GaN superlattices C Chèze, M Siekacz, F Isa, B Jenichen, F Feix, J Buller, T Schulz, ... Journal of Applied Physics 120 (12), 2016 | 23 | 2016 |
| 3D heteroepitaxy of mismatched semiconductors on silicon CV Falub, T Kreiliger, F Isa, AG Taboada, M Meduňa, F Pezzoli, ... Thin Solid Films 557, 42-49, 2014 | 22 | 2014 |
| Onset of vertical threading dislocations in Si1−xGex/Si (001) at a critical Ge concentration F Isa, A Marzegalli, AG Taboada, CV Falub, G Isella, F Montalenti, ... APL Materials 1 (5), 052109, 2013 | 21 | 2013 |
| Ge/SiGe quantum wells on Si (111): Growth, structural, and optical properties E Gatti, F Isa, D Chrastina, E Müller Gubler, F Pezzoli, E Grilli, G Isella Journal of Applied Physics 116 (4), 2014 | 18 | 2014 |
| Exceptional thermal strain reduction by a tilting pillar architecture: Suspended Ge layers on Si (001) A Marzegalli, A Cortinovis, FB Basset, E Bonera, F Pezzoli, ... Materials & Design 116, 144-151, 2017 | 17 | 2017 |
| Three-dimensional SiGe/Si heterostructures: Switching the dislocation sign by substrate under-etching F Rovaris, F Isa, R Gatti, A Jung, G Isella, F Montalenti, H von Känel Physical Review Materials 1 (7), 073602, 2017 | 16 | 2017 |
Giovanni IsellaPolitecnico di Milanoایمیل تأیید شده در polimi.it