دنبال کردن
Arsalan Pourkabirian
Arsalan Pourkabirian
Low Noise Factory
ایمیل تأیید شده در lownoisefactory.com - صفحهٔ اصلی
عنوان
نقل شده توسط
نقل شده توسط
سال
Observation of the dynamical Casimir effect in a superconducting circuit‏
CM Wilson, G Johansson, A Pourkabirian, M Simoen, JR Johansson, ...‏
nature 479 (7373), 376-379, 2011‏
11982011
Probing the quantum vacuum with an artificial atom in front of a mirror‏
IC Hoi, AF Kockum, L Tornberg, A Pourkabirian, G Johansson, P Delsing, ...‏
Nature Physics 11, 1045–1049, 2015‏
1632015
InP HEMTs for sub-mW cryogenic low-noise amplifiers‏
E Cha, N Wadefalk, G Moschetti, A Pourkabirian, J Stenarson, J Grahn‏
IEEE Electron Device Letters 41 (7), 1005-1008, 2020‏
792020
0.3–14 and 16–28 GHz wide-bandwidth cryogenic MMIC low-noise amplifiers‏
E Cha, N Wadefalk, PÅ Nilsson, J Schleeh, G Moschetti, A Pourkabirian, ...‏
IEEE Transactions on Microwave Theory and Techniques 66 (11), 4860-4869, 2018‏
742018
A 300-µW cryogenic HEMT LNA for quantum computing‏
E Cha, N Wadefalk, G Moschetti, A Pourkabirian, J Stenarson, J Grahn‏
2020 IEEE/MTT-S International Microwave Symposium (IMS), 1299-1302, 2020‏
472020
Two-finger InP HEMT design for stable cryogenic operation of ultra-low-noise Ka-and Q-band LNAs‏
E Cha, G Moschetti, N Wadefalk, PÅ Nilsson, S Bevilacqua, ...‏
IEEE Transactions on Microwave Theory and Techniques 65 (12), 5171-5180, 2017‏
352017
Thermal properties of charge noise sources‏
MV Gustafsson, A Pourkabirian, G Johansson, J Clarke, P Delsing‏
Physical Review B—Condensed Matter and Materials Physics 88 (24), 245410, 2013‏
29*2013
Nonequilibrium probing of two-level charge fluctuators using the step response of a single-electron transistor‏
A Pourkabirian, MV Gustafsson, G Johansson, J Clarke, P Delsing‏
Physical Review Letters 113 (25), 256801, 2014‏
282014
Optimization of channel structures in InP HEMT technology for cryogenic low-noise and low-power operation‏
E Cha, N Wadefalk, G Moschetti, A Pourkabirian, J Stenarson, J Li, ...‏
IEEE Transactions on Electron Devices 70 (5), 2431-2436, 2023‏
172023
Cryogenic W-band LNA for ALMA band 2+ 3 with average noise temperature of 24 K‏
Y Tang, N Wadefalk, JW Kooi, J Schleeh, G Moschetti, PÅ Nilsson, ...‏
2017 IEEE MTT-S International Microwave Symposium (IMS), 176-179, 2017‏
172017
Cryogenic LNAs for SKA band 2 to 5‏
J Schleeh, G Moschetti, N Wadefalk, E Cha, A Pourkabirian, G Alestig, ...‏
2017 IEEE MTT-S International Microwave Symposium (IMS), 164-167, 2017‏
172017
Influence of spacer thickness on the noise performance in InP HEMTs for cryogenic LNAs‏
J Li, A Pourkabirian, J Bergsten, N Wadefalk, J Grahn‏
IEEE Electron Device Letters 43 (7), 1029-1032, 2022‏
142022
III-V HEMTs for cryogenic low noise amplifiers‏
J Grahn, E Cha, A Pourkabirian, J Stenarson, N Wadefalk‏
2020 IEEE International Electron Devices Meeting (IEDM), 25.6. 1-25.6. 4, 2020‏
112020
On the angular dependence of InP high electron mobility transistors for cryogenic low noise amplifiers in a magnetic field‏
IH Rodrigues, D Niepce, A Pourkabirian, G Moschetti, J Schleeh, T Bauch, ...‏
AIP Advances 9 (8), 2019‏
112019
Cryogenic low-noise InP HEMTs: A source-drain distance study‏
E Cha, A Pourkabirian, J Schleeh, N Wadefalk, G Moschetti, JP Starski, ...‏
2016 Compound Semiconductor Week (CSW)[Includes 28th International …, 2016‏
62016
Cryogenic low noise amplifiers in an InP HEMT MMIC process‏
PÅ Nilsson, A Pourkabirian, J Schleeh, N Wadefalk, JP Starski, G Alestig, ...‏
2015 Asia-Pacific Microwave Conference (APMC) 1, 1-3, 2015‏
62015
On the relation between rf noise and subthreshold swing in InP HEMTs for cryogenic LNAs‏
J Li, A Pourkabirian, J Bergsten, N Wadefalk, J Grahn‏
2022 Asia-Pacific Microwave Conference (APMC), 10-12, 2022‏
42022
Investigation of noise properties in the InP HEMT for LNAs in Qubit amplification: effects from channel indium content‏
J Li, J Bergsten, A Pourkabirian, J Grahn‏
IEEE Journal of the Electron Devices Society, 2024‏
22024
Probing quantum and classical noise in nano circuits‏
A Pourkabirian‏
PQDT-Global, 2014‏
12014
Angular Dependence of InP High Electron Mobility Transistors for Cryogenic Low Noise Amplifiers under a magnetic field‏
IH Rodrigues, D Niepce, G Moschetti, A Pourkabirian, J Schleeh, T Bauch, ...‏
2019 Compound Semiconductor Week (CSW), 1-1, 2019‏
2019
سیستم در حال حاضر قادر به انجام عملکرد نیست. بعداً دوباره امتحان کنید.
مقاله‌ها 1–20