| Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy OH Nam, MD Bremser, TS Zheleva, RF Davis Applied Physics Letters 71 (18), 2638-2640, 1997 | 858 | 1997 |
| Dislocation density reduction via lateral epitaxy in selectively grown GaN structures TS Zheleva, OH Nam, MD Bremser, RF Davis Applied Physics Letters 71 (17), 2472-2474, 1997 | 682 | 1997 |
| Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer RF Davis, OH Nam, T Zheleva, MD Bremser US Patent 6,051,849, 2000 | 297 | 2000 |
| Growth, doping and characterization of AlxGa1− xN thin film alloys on 6H-SiC (0001) substrates MD Bremser, WG Perry, T Zheleva, NV Edwards, OH Nam, N Parikh, ... Materials Research Society Internet Journal of Nitride Semiconductor …, 1996 | 142 | 1996 |
| Growth of GaN and Al0. 2Ga0. 8N on patterened substrates via organometallic vapor phase epitaxy OH Nam, MD Bremser, BL Ward, RJ Nemanich, RFDRF Davis Japanese journal of applied physics 36 (5A), L532, 1997 | 137 | 1997 |
| Gallium nitride semiconductor structure including laterally offset patterned layers RF Davis, OH Nam US Patent 6,608,327, 2003 | 135 | 2003 |
| Characteristics of GaN‐based laser diodes for post‐DVD applications OH Nam, KH Ha, JS Kwak, SN Lee, KK Choi, TH Chang, SH Chae, ... physica status solidi (a) 201 (12), 2717-2720, 2004 | 119 | 2004 |
| Lateral epitaxial overgrowth of GaN films on SiO2 areas via metalorganic vapor phase epitaxy OH Nam, TS Zheleva, MD Bremser, RF Davis Journal of electronic materials 27 (4), 233-237, 1998 | 117 | 1998 |
| Measurement of junction temperature in GaN-based laser diodes using voltage-temperature characteristics HY Ryu, KH Ha, JH Chae, OH Nam, YJ Park Applied physics letters 87 (9), 2005 | 111 | 2005 |
| Crystal-polarity dependence of Ti/Al contacts to freestanding n-GaN substrate JS Kwak, KY Lee, JY Han, J Cho, S Chae, OH Nam, Y Park Applied Physics Letters 79 (20), 3254-3256, 2001 | 106 | 2001 |
| Lateral epitaxy and dislocation density reduction in selectively grown GaN structures TS Zheleva, OH Nam, WM Ashmawi, JD Griffin, RF Davis Journal of Crystal Growth 222 (4), 706-718, 2001 | 100 | 2001 |
| High-power GaN-based blue-violet laser diodes with AlGaN∕ GaN multiquantum barriers SN Lee, SY Cho, HY Ryu, JK Son, HS Paek, T Sakong, T Jang, KK Choi, ... Applied physics letters 88 (11), 2006 | 99 | 2006 |
| Electron emission characteristics of GaN pyramid arrays grown via organometallic vapor phase epitaxy BL Ward, OH Nam, JD Hartman, SL English, BL McCarson, R Schlesser, ... Journal of applied physics 84 (9), 5238-5242, 1998 | 84 | 1998 |
| Optical characterization of lateral epitaxial overgrown GaN layers JA Freitas, OH Nam, RF Davis, GV Saparin, SK Obyden Applied physics letters 72 (23), 2990-2992, 1998 | 84 | 1998 |
| Low-resistance and highly-reflective Zn–Ni solid solution/Ag ohmic contacts for flip-chip light-emitting diodes JO Song, DS Leem, JS Kwak, OH Nam, Y Park, TY Seong Applied physics letters 83 (24), 4990-4992, 2003 | 78 | 2003 |
| Three-dimensional ZnO hybrid nanostructures for oxygen sensing application MC Jeong, BY Oh, OH Nam, T Kim, JM Myoung Nanotechnology 17 (2), 526, 2005 | 76 | 2005 |
| Abnormal dependence of contact resistivity on hole concentration in nonalloyed ohmic contacts to JS Kwak, OH Nam, Y Park Applied physics letters 80 (19), 3554-3556, 2002 | 76 | 2002 |
| Temperature-dependent contact resistivity of the nonalloyed ohmic contacts to JS Kwak, OH Nam, Y Park Journal of applied physics 95 (10), 5917-5919, 2004 | 75 | 2004 |
| Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth RF Davis, OH Nam, T Zheleva, MD Bremser US Patent 6,602,763, 2003 | 74 | 2003 |
| Low resistance and reflective Mg-doped indium oxide-Ag ohmic contacts for flip-chip light-emitting diodes JO Song, DS Leem, JS Kwak, OH Nam, Y Park, TY Seong IEEE Photonics Technology Letters 16 (6), 1450-1452, 2004 | 69 | 2004 |
Robert F. DavisCarnegie Mellon Universityایمیل تأیید شده در andrew.cmu.edu