دنبال کردن
Colin Humphreys
عنوان
نقل شده توسط
نقل شده توسط
سال
Electron-energy-loss spectra and the structural stability of nickel oxide: An LSDA+ U study‏
SL Dudarev, GA Botton, SY Savrasov, CJ Humphreys, AP Sutton‏
Physical Review B 57 (3), 1505, 1998‏
140781998
Solid-state lighting‏
CJ Humphreys‏
MRS bulletin 33 (4), 459-470, 2008‏
4922008
Machine learning predicts laboratory earthquakes‏
B Rouet‐Leduc, C Hulbert, N Lubbers, K Barros, CJ Humphreys, ...‏
Geophysical Research Letters 44 (18), 9276-9282, 2017‏
4442017
Prospects of III-nitride optoelectronics grown on Si‏
D Zhu, DJ Wallis, CJ Humphreys‏
Reports on Progress in Physics 76 (10), 106501, 2013‏
3962013
Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope‏
TM Smeeton, MJ Kappers, JS Barnard, ME Vickers, CJ Humphreys‏
Applied physics letters 83 (26), 5419-5421, 2003‏
3432003
The scattering of fast electrons by crystals‏
CJ Humphreys‏
Reports on Progress in Physics 42 (11), 1825, 1979‏
3151979
Absorption parameters in electron diffraction theory‏
PBH CJ Humphreys‏
Philosophical Magazine 18, 115-122, 1968‏
2891968
Optical and microstructural studies of InGaN∕ GaN single-quantum-well structures‏
DM Graham, A Soltani-Vala, P Dawson, MJ Godfrey, TM Smeeton, ...‏
Journal of applied physics 97 (10), 2005‏
2702005
Critical thickness calculations for InGaN/GaN‏
D Holec, P Costa, MJ Kappers, CJ Humphreys‏
Journal of Crystal Growth 303 (1), 314-317, 2007‏
2692007
Luminescence from erbium-doped silicon nanocrystals in silica: Excitation mechanisms‏
AJ Kenyon, CE Chryssou, CW Pitt, T Shimizu-Iwayama, DE Hole, ...‏
Journal of Applied Physics 91 (1), 367-374, 2002‏
2522002
Tunable optoelectronic and ferroelectric properties in Sc-based III-nitrides‏
S Zhang, D Holec, WY Fu, CJ Humphreys, MA Moram‏
Journal of applied physics 114 (13), 2013‏
2362013
Correlation of contact resistance with microstructure for Au/Ni/Al/Ti/AlGaN/GaN ohmic contacts using transmission electron microscopy‏
AN Bright, PJ Thomas, M Weyland, DM Tricker, CJ Humphreys, R Davies‏
Journal of Applied Physics 89 (6), 3143-3150, 2001‏
2252001
Carrier localization mechanisms in InGaN/GaN quantum wells‏
D Watson-Parris, MJ Godfrey, P Dawson, RA Oliver, MJ Galtrey, ...‏
Physical Review B—Condensed Matter and Materials Physics 83 (11), 115321, 2011‏
2182011
Three-dimensional atom probe studies of an InxGa1− xN∕ GaN multiple quantum well structure: Assessment of possible indium clustering‏
MJ Galtrey, RA Oliver, MJ Kappers, CJ Humphreys, DJ Stokes, PH Clifton, ...‏
Applied physics letters 90 (6), 2007‏
2072007
Dislocation nucleation near the critical thickness in GeSi/Si strained layers‏
DJ Eaglesham, EP Kvam, DM Maher, CJ Humphreys, JC Bean‏
Philosophical Magazine A 59 (5), 1059-1073, 1989‏
1991989
Chemical mapping and formation of V-defects in InGaN multiple quantum wells‏
N Sharma, P Thomas, D Tricker, C Humphreys‏
Applied Physics Letters 77 (9), 1274-1276, 2000‏
1792000
Understanding x-ray diffraction of nonpolar gallium nitride films‏
MA Moram, CF Johnston, JL Hollander, MJ Kappers, CJ Humphreys‏
Journal of Applied Physics 105 (11), 2009‏
1782009
InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal‏
RA Oliver, GAD Briggs, MJ Kappers, CJ Humphreys, S Yasin, JH Rice, ...‏
Applied Physics Letters 83 (4), 755-757, 2003‏
1782003
Dopant profiling with the scanning electron microscope—A study of Si‏
SL Elliott, RF Broom, CJ Humphreys‏
Journal of applied physics 91 (11), 9116-9122, 2002‏
1772002
A dynamical theory for the contrast of perfect and imperfect crystals in the scanning electron microscope using backscattered electrons‏
CJHPBH JP Spencer‏
Philosophical Magazine 26, 193-213, 1972‏
1661972
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مقاله‌ها 1–20